P89LPC915_916_917_5 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 05 — 15 December 2009 67 of 75
NXP Semiconductors
P89LPC915/916/917
8-bit microcontrollers with accelerated two-clock 80C51 core
13. Other characteristics
13.1 Comparator electrical characteristics
[1] This parameter is characterized, but not tested in production.
13.2 ADC electrical characteristics
Table 19. Comparator electrical characteristics
V
DD
= 2.4 V to 3.6 V, unless otherwise specified.
T
amb
=
−
40
°
C to +85
°
C, or
−
40
°
C to +125
°
C (see Table 3 on page 3), unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V
IO
input offset voltage - - ±20 mV
V
IC
common mode input voltage 0 - V
DD
− 0.3 V
CMRR common mode rejection ratio
[1]
--−50 dB
t
res(tot)
total response time - 250 500 ns
t
(CE-OV)
chip enable to output valid time - - 10 µs
I
LI
input leakage current 0 < V
I
<V
DD
--±10 µA
Table 20. ADC electrical characteristics
V
DD
= 2.4 V to 3.6 V, unless otherwise specified.
T
amb
=
−
40
°
C to +85
°
C, or
−
40
°
C to +125
°
C (see Table 3 on page 3), unless otherwise specified.
All limits valid for an external source impedance of less than 10 k
Ω
.
Symbol Parameter Conditions Min Typ Max Unit
V
IA
analog input voltage V
SS
− 0.2 - V
SS
+ 0.2 V
C
ia
analog input capacitance - - 15 pF
E
D
differential linearity error - - ±1 LSB
E
L(adj)
integral non-linearity - - ±1 LSB
E
O
offset error - - ±2 LSB
E
G
gain error - - ±1%
E
u(tot)
total unadjusted error - - ±2 LSB
M
CTC
channel-to-channel matching - - ±1 LSB
α
ct(port)
crosstalk between port inputs 0 kHz to 100 kHz - - −60 dB
SR
in
input slew rate - - 100 V/ms
T
cy(ADC)
ADC clock cycle 111 - 2000 ns
t
ADC
conversion time A/D enabled - - 13T
cy(ADC)
ns
