© Semiconductor Components Industries, LLC, 2010 www.onsemi.com
FOD8316 Rev. 2 5
FOD8316 — 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection and Isolated Fault Sensing
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only. T
A
= 25ºC unless otherwise specified.
Notes:
1. Maximum pulse width = 10 µs, maximum duty cycle = 0.2%.
2. This negative output supply voltage is optional. It’s only needed when negative gate drive is implemented. Refer to
“Dual Supply Operation – Negative Bias at Vss” on page 23.
3. No derating required across temperature range.
4. Derate linearly above 64°C, free air temperature at a rate of 10.2 mW/°C
5. Functional operation under these conditions is not implied. Permanent damage may occur if the device is subjected
to conditions outside these ratings.
Recommended Operating Conditions
The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended
operating conditions are specified to ensure optimal performance to the datasheet specifications. ON does not recom-
mend exceeding them or designing to absolute maximum ratings.
Note:
6. During power up or down, it is important to ensure that V
IN+
remains low until both the input and output supply
v
oltages reaches the proper recommended operating voltages to avoid any momentary instability at the output state.
See also the discussion in the “Time to Good Power” section on page 23.
Symbol Parameter Value Units
T
STG
Storage Temperature -40 to +125 ºC
T
OPR
Operating Temperature -40 to +100 ºC
T
J
Junction Temperature -40 to +125 ºC
T
SOL
Lead Wave Solder Temperature
(
no solder immersion)
Refer to reflow temperature profile on page 27.
260 for 10 seconds ºC
I
FAULT
Fault Output Current 15 mA
I
O(PEAK)
Peak Output Current
(1)
3 A
V
E
– V
SS
Negative Output Supply Voltage
(2)
0 to 15 V
V
DD2
– V
E
Positive Output Supply Voltage -0.5 to 35 – (V
E
– V
SS
) V
V
O(peak)
Gate Drive Output Voltage -0.5 to 35 V
V
DD2
– V
SS
Output Supply Voltage -0.5 to 35 V
V
DD1
Positive Input Supply Voltage -0.5 to 6 V
V
IN+
, V
IN-
and V
RESET
Input Voltages -0.5 to V
DD1
V
V
FAULT
Fault Pin Voltage -0.5 to V
DD1
V
V
S
Source of Pull-up PMOS Transistor Voltage V
SS
+ 6.5 to V
DD2
V
V
DESAT
DESAT Voltage V
E
to V
E
+ 25 V
PD
I
Input Power Dissipation
(3)(5)
100 mW
PD
O
Output Power Dissipation
(4)(5)
600 mW
Symbol Parameter Min. Max. Unit
T
A
Ambient Operating Temperature -40 +100 ºC
V
DD1
Input Supply Voltage
(6)
3 5.5 V
V
DD2
– V
SS
Total Output Supply Voltage 15 30 V
V
E
– V
SS
Negative Output Supply Voltage 0 15 V
V
DD2
– V
E
Positive Output Supply Voltage
(6)
15 30 – (V
E
– V
SS
) V
V
S
Source of Pull-up PMOS Transistor Voltage V
SS
+ 7.5 V
DD2
V
