M36W432T, M36W432B
10/57
Flash Memory Component
TheFlashMemoryisa32Mbit(2Mbitx16)de-
vice that can be erased electrically at the block
level and programmed in-system on a Word-by-
Word basis. These operations can be performed
using a single low voltage (2.7 to 3.3V) supply
and the V
DDQF
for device I/0 operation feature the
same voltage range. An optional 12V V
PPF
power
supply is provided to speed up customer pro-
gramming.
The device features an asymmetrical blocked ar-
chitecture with an array of 71 blocks: 8 Parameter
Blocksof4KWordand63MainBlocksof32
KWord. The M36W432T device has the Flash
Memory Parameter Blocks at the top of the mem-
ory address space while the M36W432B device lo-
cates the Parameter Blocks starting from the
bottom. The memory maps are shown in Figure 5,
Block Addresses.
The Flash Memory features an instant, individual
block locking scheme that allows any block to be
locked or unlocked with no latency, enabling in-
stant code and data protection. All blocks have
three levels of protection. They can be locked and
locked-down individually preventing any acciden-
tal programming or erasure. There is an additional
hardware protection against program and erase.
When V
PPF
V
PPLK
all blocks are protected
against program or erase. All blocks are locked at
Power Up.
Each block can be erased separately. Erase can
be suspended in order to perform either read or
program in any other block and then resumed.
Program can be suspended to read data in any
other block and then resumed. Each block can be
programmed and erased over 100,000 cycles.
The device includes a 128 bit Protection Register
and a Security Block to increase the protection of
a system design. The Protection Register is divid-
ed into two 64 bit segments, the first one contains
a unique device number written by ST, while the
second one is one-time-programmable by the us-
er. The user programmable segment can be per-
manently protected. The Security Block,
parameter block 0, can be permanently protected
by the user. Figure 6, shows the Flash Security
Block Memory Map.
Program and Erase commands are written to the
Command Interface of the memory. An on-chip
Program/Erase Controller takes care of the tim-
ings necessary for program and erase operations.
The end of a program or erase operation can be
detected and any error conditions identified. The
command set required to control the memory is
consistent with JEDEC standards.
11/57
M36W432T, M36W432B
Figure 5. Flash Block Addresses
Note: Also see Appendix A, Tables 26 and 27 for a full listing of the Flash Block Addresses.
Figure 6. Flash Security Block Memory Map
SRAM Component
The SRAM is an 4 Mbit asynchronous random ac-
cess memory which features a super low voltage
operation and low current consumption with an ac-
cess time of 70 ns in all conditions. The memory
operations can be performed using a single low
voltage supply, 2.7V to 3.3V, which is the same as
the Flash voltage supply.
AI05203
4 KWords
1FFFFF
1FF000
32 KWords
00FFFF
008000
32 KWords
007FFF
000000
Top Boot Block Addresses
4 KWords
1F8FFF
1F8000
32 KWords
1F0000
1F7FFF
Total of 8
4 KWord Blocks
Total of 63
32 KWord Blocks
4 KWords
1FFFFF
1F8000
32 KWords
32 KWords
000FFF
000000
Bottom Boot Block Addresses
4 KWords
1F7FFF
00FFFF
32 KWords
1F0000
008000
Total of 63
32 KWord Blocks
Total of 8
4 KWord Blocks
007FFF
007000
AI05204
Parameter Block # 0
User Programmable OTP
Unique device number
Protection Register Lock 2 1 0
88h
85h
84h
81h
80h
M36W432T, M36W432B
12/57
OPERATING MODES
Flash Bus Operations
There are six standard bus operations that control
the device. These are Bus Read, Bus Write, Out-
put Disable, Standby, Automatic Standby and Re-
set. See Table 2, Main Operation Modes, for a
summary.
Typically glitches of less than 5ns on Chip Enable
or Write Enable are ignored by the memory and do
not affect bus operations.
Read. Read Bus operations are used to output
the contents of the Memory Array, the Electronic
Signature, the Status Register and the Common
Flash Interface. Both Chip Enable and Output En-
ablemustbeatV
IL
in order to perform a read op-
eration. The Chip Enable input should be used to
enable the device. Output Enable should be used
to gate data onto the output. The data read de-
pends on the previous command written to the
memory (see Command Interface section). See
Figure 9, Read Mode AC Waveforms, and Table
15, Flash Read AC Characteristics, for details of
when the output becomes valid.
Read mode is the default state of the device when
exiting Reset or after power-up.
Write. Bus Write operations write Commands to
the memory or latch Input Data to be programmed.
A write operation is initiated when Chip Enable
and Write Enable are at V
IL
with Output Enable at
V
IH
. Commands, Input Data and Addresses are
latched on the rising edge of Write Enable or Chip
Enable, whichever occurs first.
See Figures 10 and 11, Write AC Waveforms, and
Tables 16 and 17, Flash Write AC Characteristics,
for details of the timing requirements.
Output Disable. The data outputs are high im-
pedance when the Output Enable is at V
IH
.
Standby. Standby disables most of the internal
circuitry allowing a substantial reduction of the cur-
rent consumption. The memory is in stand-by
when Chip Enable is at V
IH
andthedeviceisin
read mode. The power consumption is reduced to
the stand-by level and the outputs are set to high
impedance, independently from the Output Enable
or Write Enable inputs. If Chip Enable switches to
V
IH
during a program or erase operation, the de-
vice enters Standby mode when finished.
Automatic Standby. Automatic Standby pro-
vides a low power consumption state during Read
mode. Following a read operation, the device en-
ters Automatic Standby after 150ns of bus inactiv-
ity even if Chip Enable is Low, V
IL
, and the supply
current is reduced to I
DD1
. The data Inputs/Out-
puts will still output data if a bus Read operation is
in progress.
Reset. During Reset mode when Output Enable
is Low, V
IL
, the memory is deselected and the out-
puts are high impedance. The memory is in Reset
mode when Reset is at V
IL
. The power consump-
tion is reduced to the Standby level, independently
from the Chip Enable, Output Enable or Write En-
able inputs. If Reset is pulled to V
SSF
during a Pro-
gram or Erase, this operation is aborted and the
memory content is no longer valid.
Flash Command Interface
All Bus Write operations to the memory are inter-
preted by the Command Interface. Commands
consist of one or more sequential Bus Write oper-
ations. An internal Program/Erase Controller han-
dles all timings and verifies the correct execution
of the Program and Erase commands. The Pro-
gram/Erase Controller provides a Status Register
whose output may be read at any time during, to
monitor the progress of the operation, or the Pro-
gram/Erase states. See Appendix 29, Table 34,
Write State Machine Current/Next, for a summary
of the Command Interface.
The Command Interface is reset to Read mode
when power is first applied, when exiting from Re-
set or whenever V
DDF
is lower than V
LKO
.Com-
mand sequences must be followed exactly. Any
invalid combination of commands will reset the de-
vice to Read mode. Refer to Table 3, Commands,
in conjunction with the text descriptions below.
Read Memory Array Command. The Read
command returns the memory to its Read mode.
One Bus Write cycle is required to issue the Read
Memory Array command and return the memory to
Read mode. Subsequent read operations will read
the addressed location and output the data. When
a device Reset occurs, the memory defaults to
Read mode.
Read Status Register Command. The Status
Register indicates when a program or erase oper-
ation is complete and the success or failure of the
operation itself. Issue a Read Status Register
command to read the Status Register’s contents.
Subsequent Bus Read operations read the Status
Register at any address, until another command is
issued. See Table 10, Status Register Bits, for de-
tails on the definitions of the bits.
The Read Status Register command may be is-
sued at any time, even during a Program/Erase
operation. Any Read attempt during a Program/
Erase operation will automatically output the con-
tent of the Status Register.

M36W432T85ZA6T

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
NOR Flash 32M (2Mx16) 85ns
Lifecycle:
New from this manufacturer.
Delivery:
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