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M36W432T, M36W432B
Read Electronic Signature Command. The
Read Electronic Signature command reads the
Manufacturer and Device Codes and the Block
Locking Status, or the Protection Register.
The Read Electronic Signature command consists
of one write cycle, a subsequent read will output
the Manufacturer Code, the Device Code, the
Block Lock and Lock-Down Status, or the Protec-
tion and Lock Register. See Tables 4, 5 and 6 for
the valid address.
Read CFI Query Command. The Read Query
Command is used to read data from the Common
Flash Interface (CFI) Memory Area, allowing pro-
gramming equipment or applications to automati-
cally match their interface to the characteristics of
thedevice.OneBusWritecycleisrequiredtois-
sue the Read Query Command. Once the com-
mand is issued subsequent Bus Read operations
read from the Common Flash Interface Memory
Area. See Appendix B, Common Flash Interface,
Tables 28, 29, 30, 31, 32 and 33 for details on the
information contained in the Common Flash Inter-
face memory area.
Block Erase Command. TheBlockErasecom-
mandcanbeusedtoeraseablock.Itsetsallthe
bits within the selected block to ’1’. All previous
data in the block is lost. If the block is protected
then the Erase operation will abort, the data in the
block will not be changed and the Status Register
will output the error.
Two Bus Write cycles are required to issue the
command.
The first bus cycle sets up the Erase command.
The second latches the block address in the
internal state machine and starts the Program/
Erase Controller.
If the second bus cycle is not Write Erase Confirm
(D0h), Status Register bits b4 and b5 are set and
the command aborts.
Erase aborts if Reset turns to V
IL
. As data integrity
cannot be guaranteed when the Erase operation is
aborted, the block must be erased again.
During Erase operations the memory will accept
the Read Status Register command and the Pro-
gram/Erase Suspend command, all other com-
mands will be ignored. Typical Erase times are
given in Table 7, Program, Erase Times and Pro-
gram/Erase Endurance Cycles.
See Appendix C, Figure 28, Erase Flowchart and
Pseudo Code, for a suggested flowchart for using
the Erase command.
Program Command. The memory array can be
programmed word-by-word. Two bus write cycles
are required to issue the Program Command.
The first bus cycle sets up the Program
command.
The second latches the Address and the Data to
be written and starts the Program/Erase
Controller.
During Program operations the memory will ac-
cept the Read Status Register command and the
Program/Erase Suspend command. Typical Pro-
gram times are given in Table 7, Program, Erase
Times and Program/Erase Endurance Cycles.
Programming aborts if Reset goes to V
IL
. As data
integrity cannot be guaranteed when the program
operation is aborted, the block containing the
memory location must be erased and repro-
grammed.
See Appendix C, Figure 25, Program Flowchart
and Pseudo Code, for the flowchart for using the
Program command.
Double Word Program Command. This feature
is offered to improve the programming throughput,
writing a page of two adjacent words in paral-
lel.The two words must differ only for the address
A0. Programming should not be attempted when
V
PPF
is not at V
PPH
. The command can be execut-
ed if V
PPF
is below V
PPH
but the result is not guar-
anteed.
Three bus write cycles are necessary to issue the
Double Word Program command.
The first bus cycle sets up the Double Word
Program Command.
The second bus cycle latches the Address and
theDataofthefirstwordtobewritten.
The third bus cycle latches the Address and the
Data of the second word to be written and starts
the Program/Erase Controller.
Read operations output the Status Register con-
tent after the programming has started. Program-
ming aborts if Reset goes to V
IL
. As data integrity
cannot be guaranteed when the program opera-
tion is aborted, the block containing the memory
location must be erased and reprogrammed.
See Appendix C, Figure 26, Double Word Pro-
gram Flowchart and Pseudo Code, for the flow-
chart for using the Double Word Program
command.
Clear Status Register Command. The Clear
Status Register command can be used to reset
bits 1, 3, 4 and 5 in the Status Register to ‘0’. One
bus write cycle is required to issue the Clear Sta-
tus Register command.
The bits in the Status Register do not automatical-
ly return to ‘0’ when a new Program or Erase com-
mand is issued. The error bits in the Status
Register should be cleared before attempting a
new Program or Erase command.
M36W432T, M36W432B
14/57
Program/Erase Suspend Command. The Pro-
gram/Erase Suspend command is used to pause
a Program or Erase operation. One bus write cycle
is required to issue the Program/Erase command
and pause the Program/Erase controller.
During Program/Erase Suspend the Command In-
terface will accept the Program/Erase Resume,
Read Array, Read Status Register, Read Electron-
ic Signature and Read CFI Query commands. Ad-
ditionally, if the suspend operation was Erase then
the Program, Block Lock, Block Lock-Down or
Protection Program commands will also be ac-
cepted. The block being erased may be protected
by issuing the Block Protect, Block Lock or Protec-
tion Program commands. When the Program/
Erase Resume command is issued the operation
will complete. Only the blocks not being erased
may be read or programmed correctly.
During a Program/Erase Suspend, the device can
be placed in a pseudo-standby mode by taking
Chip Enable to V
IH
. Program/Erase is aborted if
Reset turns to V
IL
.
See Appendix C, Figure 27, Program or Double
Word Program Suspend & Resume Flowchart and
Pseudo Code, and Figure 29, Erase Suspend &
Resume Flowchart and Pseudo Code for flow-
charts for using the Program/Erase Suspend com-
mand.
Program/Erase Resume Command. The Pro-
gram/Erase Resume command can be used to re-
start the Program/Erase Controller after a
Program/Erase Suspend operation has paused it.
One Bus Write cycle is required to issue the com-
mand. Once the command is issued subsequent
Bus Read operations read the Status Register.
See Appendix C, Figure 27, Program or Double
Word Program Suspend & Resume Flowchart and
Pseudo Code, and Figure 29, Erase Suspend &
Resume Flowchart and Pseudo Code for flow-
charts for using the Program/Erase Resume com-
mand.
Protection Register Program Command. The
Protection Register Program command is used to
Program the 64 bit user One-Time-Programmable
(OTP) segment of the Protection Register. The
segment is programmed 16 bits at a time. When
shipped all bits in the segment are set to ‘1’. The
user can only program the bits to ‘0’.
Two write cycles are required to issue the Protec-
tion Register Program command.
The first bus cycle sets up the Protection
Register Program command.
The second latches the Address and the Data to
be written to the Protection Register and starts
the Program/Erase Controller.
Read operations output the Status Register con-
tent after the programming has started.
The segment can be protected by programming bit
1 of the Protection Lock Register. Bit 1 of the Pro-
tection Lock Register protects bit 2 of the Protec-
tion Lock Register. Programming bit 2 of the
Protection Lock Register will result in a permanent
protection of the Security Block (see Figure 6,
Flash Security Block Memory Map). Attempting to
program a previously protected Protection Regis-
ter will result in a Status Register error. The pro-
tection of the Protection Register and/or the
Security Block is not reversible.
The Protection Register Program cannot be sus-
pended.
Block Lock Command. The Block Lock com-
mand is used to lock a block and prevent Program
or Erase operations from changing the data in it.
All blocks are locked at power-up or reset.
Two Bus Write cycles are required to issue the
Block Lock command.
The first bus cycle sets up the Block Lock
command.
The second Bus Write cycle latches the block
address.
The Lock Status can be monitored for each block
using the Read Block Signature command. Table.
9 shows the Lock Status after issuing a Block Lock
command.
The Block Lock bits are volatile, once set they re-
main set until reset or power-down/power-up.
They are cleared by a Blocks Unlock command.
Refer to the section, Block Locking, for a detailed
explanation.
Block Unlock Command. The Blocks Unlock
command is used to unlock a block, allowing the
block to be programmed or erased. Two Bus Write
cycles are required to issue the Blocks Unlock
command.
The first bus cycle sets up the Block Unlock
command.
The second Bus Write cycle latches the block
address.
The Lock Status can be monitored for each block
using the Read Block Signature command. Table.
9 shows the Lock Status after issuing a Block Un-
lock command. Refer to the section, Block Lock-
ing, for a detailed explanation.
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M36W432T, M36W432B
Block Lock-Down Command. A locked block
cannot be Programmed or Erased, or have its
Lock status changed when WP
is low, V
IL
. When
WP
is high, V
IH,
the Lock-Down function is dis-
abled and the locked blocks can be individually un-
locked by the Block Unlock command.
Two Bus Write cycles are required to issue the
Block Lock command.
The first bus cycle sets up the Block Lock
command.
The second Bus Write cycle latches the block
address.
The Lock Status can be monitored for each block
using the Read Block Signature command.
Locked blocks revert to the protected (and not
locked) state when the device is reset on power-
down. Table. 9 shows the Lock Status after issuing
a Block Lock-Down command. Refer to the sec-
tion, Block Locking, for a detailed explanation.
Table 3. Commands
Note: X = Don't Care.
1. The signature addresses are listed in Tables 4, 5 and 6.
2. Addr 1 and Addr 2 must be consecutive Addresses differing only for A0.
Commands
No. of
Cycles
Bus Write Operations
1st Cycle 2nd Cycle 3nd Cycle
Bus
Op.
Addr Data
Bus
Op.
Addr Data
Bus
Op.
Addr Data
Read Memory Array 1+ Write X FFh
Read
Read
Addr
Data
Read Status Register 1+ Write X 70h Read X
Status
Register
Read Electronic Signature 1+ Write X 90h Read
Signature
Addr
(1)
Signature
Read CFI Query 1+ Write 55h 98h Read CFI Addr Query
Erase 2 Write X 20h Write
Block
Addr
D0h
Program 2 Write X
40h or
10h
Write Addr Data Input
Double Word Program
(2)
3 Write X 30h Write Addr 1 Data Input Write Addr 2
Data
Input
Clear Status Register 1 Write X 50h
Program/Erase Suspend 1 Write X B0h
Program/Erase Resume 1 Write X D0h
Block Lock 2 Write X 60h Write
Block
Address
01h
Block Unlock 2 Write X 60h Write
Block
Address
D0h
Block Lock-Down 2 Write X 60h Write
Block
Address
2Fh
Protection Register
Program
2 Write X C0h Write
Address
Data Input

M36W432T85ZA6T

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
NOR Flash 32M (2Mx16) 85ns
Lifecycle:
New from this manufacturer.
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