19/57
M36W432T, M36W432B
Flash Status Register
The Status Register provides information on the
current or previous Program or Erase operation.
The various bits convey information and errors on
the operation. To read the Status register the
Read Status Register command can be issued, re-
fer to Read Status Register Command section. To
output the contents, the Status Register is latched
on the falling edge of the Chip Enable or Output
Enable signals, and can be read until Chip Enable
or Output Enable returns to V
IH
. Either Chip En-
able or Output Enable must be toggled to update
the latched data.
Bus Read operations from any address always
read the Status Register during Program and
Erase operations.
The bits in the Status Register are summarized in
Table 10, Status Register Bits. Refer to Table 10
in conjunction with the following text descriptions.
Program/Erase Controller Status (Bit 7). The Pro-
gram/Erase Controller Status bit indicates whether
the Program/Erase Controller is active or inactive.
When the Program/Erase Controller Status bit is
Low (set to ‘0’), the Program/Erase Controller is
active; when the bit is High (set to 1’), the Pro-
gram/Erase Controller is inactive, and the device
is ready to process a new command.
The Program/Erase Controller Status is Low im-
mediately after a Program/Erase Suspend com-
mand is issued until the Program/Erase Controller
pauses. After the Program/Erase Controller paus-
es the bit is High.
During Program, Erase, operations the Program/
EraseControllerStatusbitcanbepolledtofindthe
end of the operation. Other bits in the Status Reg-
ister should not be tested until the Program/Erase
Controller completes the operation and the bit is
High.
After the Program/Erase Controller completes its
operation the Erase Status, Program Status, V
PPF
Status and Block Lock Status bits should be tested
for errors.
Erase Suspend Status (Bit 6). The Erase Sus-
pend Status bit indicates that an Erase operation
has been suspended or is going to be suspended.
When the Erase Suspend Status bit is High (set to
‘1’), a Program/Erase Suspend command has
been issued and the memory is waiting for a Pro-
gram/Erase Resume command.
The Erase Suspend Status should only be consid-
ered valid when the Program/Erase Controller Sta-
tus bit is High (Program/Erase Controller inactive).
Bit 7 is set within 30µs of the Program/Erase Sus-
pend command being issued therefore the memo-
ry may still complete the operation rather than
entering the Suspend mode.
When a Program/Erase Resume command is is-
sued the Erase Suspend Status bit returns Low.
Erase Status (Bit 5). The Erase Status bit can be
used to identify if the memory has failed to verify
that the block has erased correctly. When the
Erase Status bit is High (set to ‘1’), the Program/
Erase Controller has applied the maximum num-
ber of pulses to the block and still failed to verify
that the block has erased correctly. The Erase Sta-
tus bit should be read once the Program/Erase
Controller Status bit is High (Program/Erase Con-
troller inactive).
Once set High, the Erase Status bit can only be re-
set Low by a Clear Status Register command or a
hardware reset. If set High it should be reset be-
fore a new Program or Erase command is issued,
otherwise the new command will appear to fail.
Program Status (Bit 4). The Program Status bit
is used to identify a Program failure. When the
Program Status bit is High (set to ‘1’), the Pro-
gram/Erase Controller has applied the maximum
number of pulses to the byte and still failed to ver-
ify that it has programmed correctly. The Program
Status bit should be read once the Program/Erase
Controller Status bit is High (Program/Erase Con-
troller inactive).
Once set High, the Program Status bit can only be
reset Low by a Clear Status Register command or
a hardware reset. If set High it should be reset be-
fore a new command is issued, otherwise the new
command will appear to fail.
V
PPF
Status (Bit 3). The V
PPF
Status bit can be
used to identify an invalid voltage on the V
PPF
pin
during Program and Erase operations. The V
PPF
pin is only sampled at the beginning of a Program
or Erase operation. Indeterminate results can oc-
cur if V
PPF
becomes invalid during an operation.
When the V
PPF
Status bit is Low (set to ‘0’), the
voltageontheV
PPF
pin was sampled at a valid
voltage; when the V
PPF
Status bit is High (set to
‘1’), the V
PPF
pin has a voltage that is below the
V
PPF
Lockout Voltage, V
PPLK
, the memory is pro-
tected and Program and Erase operations cannot
be performed.
Once set High, the V
PPF
Status bit can only be re-
set Low by a Clear Status Register command or a
hardware reset. If set High it should be reset be-
fore a new Program or Erase command is issued,
otherwise the new command will appear to fail.
M36W432T, M36W432B
20/57
Program Suspend Status (Bit 2). The Program
Suspend Status bit indicates that a Program oper-
ation has been suspended. When the Program
Suspend Status bit is High (set to ‘1’), a Program/
Erase Suspend command has been issued and
the memory is waiting for a Program/Erase Re-
sume command. The Program Suspend Status
should only be considered valid when the Pro-
gram/Erase Controller Status bit is High (Program/
Erase Controller inactive). Bit 2 is set within s of
the Program/Erase Suspend command being is-
sued therefore the memory may still complete the
operation rather than entering the Suspend mode.
When a Program/Erase Resume command is is-
sued the Program Suspend Status bit returns Low.
Block Protection Status (Bit 1). The Block Pro-
tectionStatusbitcanbeusedtoidentifyifaPro-
gram or Erase operation has tried to modify the
contents of a locked block.
When the Block Protection Status bit is High (set
to ‘1’), a Program or Erase operation has been at-
temptedonalockedblock.
Once set High, the Block Protection Status bit can
only be reset Low by a Clear Status Register com-
mand or a hardware reset. If set High it should be
reset before a new command is issued, otherwise
the new command will appear to fail.
Reserved (Bit 0). Bit 0 of the Status Register is
reserved. Its value must be masked.
Note: Refer to Appendix C, Flowcharts and
Pseudo Codes, for using the Status Register.
Table 10. Status Register Bits
Note: Logic level '1' is High, '0' is Low.
SRAM Operations
There are five standard operations that control the
SRAM component. These are Bus Read, Bus
Write, Standby/Power-down, Data Retention and
Output Disable. A summary is shown in Table 2,
Main Operation Modes
Read. Read operations are used to output the
contents of the SRAM Array. The SRAM is in Read
mode whenever Write Enable, WS
,isatV
IH
,Out-
put Enable, GS
,isatV
IL
, Chip Enable, E1S,isat
V
IL
, Chip Enable, E2S, is at V
IH
, and Byte Enables,
UBS
and LBS are at V
IL
.
Valid data will be available on the output pins after
atimeoft
AVQV
after the last stable address. If the
Chip Enable or Output Enable access times are
not met, data access will be measured from the
limiting parameter (t
E1LQV
,t
E2HQV
,ort
GLQV
) rath-
er than the address. Data out may be indetermi-
nate at t
E1LQX
,t
E2HQX
and t
GLQX
, but data lines
will always be valid at t
AVQV
(see Table 19, Figures
13 and 14).
Bit Name Logic Level Definition
7 P/E.C. Status
'1' Ready
'0' Busy
6 Erase Suspend Status
'1' Suspended
'0' In progress or Completed
5 Erase Status
'1' Erase Error
'0' Erase Success
4 Program Status
'1' Program Error
'0' Program Success
3
V
PPF
Status
'1'
V
PPF
Invalid, Abort
'0'
V
PPF
OK
2 Program Suspend Status
'1' Suspended
'0' In Progress or Completed
1 Block Protection Status
'1' Program/Erase on protected block, Abort
'0' No operation to protected blocks
0 Reserved
21/57
M36W432T, M36W432B
Write. Write operations are used to write data to
the SRAM. The SRAM is in Write mode whenever
WS
and E1S are at V
IL
,andE2SisatV
IH
. Either
the Chip Enable inputs, E1S
and E2S, or the Write
Enable input, WS
, must be deasserted during ad-
dress transitions for subsequent write cycles.
A Write operation is initiated when E1S
is at V
IL
,
E2S is at V
IH
and WS is at V
IL
. The data is latched
on the falling edge of E1S
, the rising edge of E2S
or the falling edge of WS
, whichever occurs last.
The Write cycle is terminated on the rising edge of
E1S
, the rising edge of WS or the falling edge of
E2S, whichever occurs first.
If the Output is enabled (E1S
=V
IL
,E2S=V
IH
and
GS
=V
IL
), then WS will return the outputs to high
impedance within t
WLQZ
of its falling edge. Care
must be taken to avoid bus contention in this type
of operation. The Data input must be valid for t
D-
VWH
before the rising edge of Write Enable, for
t
DVE1H
before the rising edge of E1S or for t
DVE2L
before the falling edge of E2S, whichever occurs
first, and remain valid for t
WHDX
,t
E1HAX
or t
E2LAX
(see Table 20, Figure 16, 17, 18 and 19).
Standby/Power-Down. The SRAM component
has a chip enabled power-down feature which in-
vokes an automatic standby mode (see Table 19,
Figure 15). The SRAM is in Standby mode when-
ever either Chip Enable is deasserted, E1S
at V
IH
or E2S at V
IL
.
Data Retention. The SRAM data retention per-
formances as V
DDS
goes down to V
DR
are de-
scribedinTable21andFigure20,21.InE1S
controlled data retention mode, the minimum
standby current mode is entered when
E1S
V
DDS
– 0.2V and E2S 0.2V or
E2S V
DDS
– 0.2V. In E2S controlled data reten-
tion mode, minimum standby current mode is en-
tered when E2S 0.2V.
Output Disable. The data outputs are high im-
pedance when the Output Enable, GS
,isatV
IH
with Write Enable, WS,atV
IH
.
MAXIMUM RATING
Stressingthedeviceabovetheratinglistedinthe
Absolute Maximum Ratings table may cause per-
manent damage to the device. These are stress
ratings only and operation of the device at these or
any other conditions above those indicated in the
Operating sections of this specification is not im-
plied. Exposure to Absolute Maximum Rating con-
ditions for extended periods may affect device
reliability. Refer also to the STMicroelectronics
SURE Program and other relevant quality docu-
ments.
Table 11. Absolute Maximum Ratings
Note: 1. Depends on range.
Symbol Parameter
Value
Unit
Min Max
T
A
Ambient Operating Temperature
(1)
–40 85 °C
T
BIAS
Temperature Under Bias –40 125 °C
T
STG
Storage Temperature –55 155 °C
V
IO
Input or Output Voltage –0.5
V
DDQF
+0.3
V
V
DDF
,V
DDQF
Flash Supply Voltage –0.6 3.9 V
V
PPF
Program Voltage –0.6 13 V
V
DDS
SRAM Supply Voltage –0.5 3.9 V

M36W432T85ZA6T

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
NOR Flash 32M (2Mx16) 85ns
Lifecycle:
New from this manufacturer.
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