M36W432T, M36W432B
22/57
DC AND AC PARAMETERS
This section summarizes the operating and mea-
surement conditions, and the DC and AC charac-
teristics of the device. The parameters in the DC
and AC characteristics Tables that follow, are de-
rived from tests performed under the Measure-
ment Conditions summarized in Table 12,
Operating and AC Measurement Conditions. De-
signers should check that the operating conditions
in their circuit match the measurement conditions
when relying on the quoted parameters.
Table 12. Operating and AC Measurement Conditions
Figure 7. AC Measurement I/O Waveform
Note: V
DDQ
means V
DDQF
=V
DDS
Figure 8. AC Measurement Load Circuit
Table 13. Device Capacitance
Note: Sampled only, not 100% tested.
Parameter
SRAM Flash Memory
Units70 70/85
Min Max Min Max
V
DDF
Supply Voltage
2.7 3.3 V
V
DDQ F =
V
DDS
Supply Voltage
2.7 3.3 2.7 3.3 V
Ambient Operating Temperature – 40 85 – 40 85 °C
Load Capacitance (C
L
)
50 50 pF
Input Rise and Fall Times 5 5 ns
Input Pulse Voltages
0toV
DDQF
0toV
DDQF
V
Input and Output Timing Ref. Voltages
V
DDQF
/2 V
DDQF
/2
V
AI05205
V
DDQ
0V
V
DDQ
/2
AI05206
V
DDQF
C
L
C
L
includes JIG capacitance
25k
DEVICE
UNDER
TEST
0.1µF
V
DDF
0.1µF
V
DDQF
25k
Symbol Parameter Test Condition Typ Max Unit
C
IN
Input Capacitance
V
IN
=0V,f=1MHz
12 14 pF
C
OUT
Output Capacitance
V
OUT
=0V,f=1MHz
20 22 pF
23/57
M36W432T, M36W432B
Table 14. DC Characteristics
Symbol Parameter Device Test Condition Min Typ Max Unit
I
LI
Input Leakage Current
Flash &
SRAM
0V V
IN
V
DDQF
±2 µA
I
LO
Output Leakage Current
Flash &
SRAM
0V V
OUT
V
DDQF,
SRAM Outputs Hi-Z
±10 µA
I
DDS
V
DD
Standby Current
Flash
EF
=V
DDQF
± 0.2V
V
DDQF
=V
DDF
max
15 50 µA
SRAM
E1S
=E2SV
DDS
–0.2V
or E2S 0.2V
20 50 µA
I
DDD
Supply Current (Reset) Flash
RPF
=V
SSF
± 0.2V
15 50 µA
I
DD
Supply Current SRAM
V
IN
V
DDS
– 0.2V
or V
IN
0.2V
I
IO
= 0 mA, cycle time = 1µs
12mA
V
IN
V
DDS
– 0.2V
or V
IN
0.2V
I
IO
= 0 mA, min cycle time
712mA
I
DDR
Supply Current (Read) Flash
EF
=V
IL
,GF
=
V
IH,
f=5MHz
10 20 mA
I
DDW
Supply Current (Program)
Flash Program in progress 10 20 mA
I
DDE
Supply Current (Erase) Flash Erase in progress 5 20 mA
I
DDES
Supply Current
(Erase Suspend)
Flash Erase Suspend in progress 50 µA
I
DDWS
Supply Current
(Program Suspend)
Flash
Program Suspend in progress
50 µA
I
PPS
Program Current
(Standby)
Flash
V
PPF
V
DDQF
0.2 5 µA
V
PPF
> V
DDF
100 400 µA
I
PPR
Program Current
(Read)
Flash
V
PPF
V
DDQF
0.2 5 µA
V
PPF
=V
DDF
100 400 µA
I
PPW
Program Current
(Program)
Flash
V
PPF
= 12V ± 0.6V
Program in progress
510mA
I
PPE
Program Current
(Erase)
Flash
V
PPF
= 12V ± 0.6V
Program in progress
510mA
V
IL
Input Low Voltage
Flash &
SRAM
V
DDQF
=V
DDS
2.7V
– 0.3 0.8 V
V
IH
Input High Voltage
Flash &
SRAM
V
DDQF
=V
DDS
2.7V
2.2
V
DDQF
+0.3
V
V
OL
Output Low Voltage
Flash &
SRAM
V
DDQF
=V
DDS
=V
DD
min
I
OL
= 100µA
0.1 V
V
OH
Output High Voltage
Flash &
SRAM
V
DDQF
=V
DDS
=V
DD
min
I
OH
= –100µA
V
DDQ
–0.1
V
V
PPL
Program Voltage (Program or
Erase operations)
Flash 2.7 3.3 V
M36W432T, M36W432B
24/57
Figure 9. Flash Read AC Waveforms
Table 15. Flash Read AC Characteristics
V
PPH
Program Voltage
(Program or Erase operations)
Flash 11.4 12.6 V
V
PPLK
Program Voltage
(Program and Erase lock-out)
Flash 1 V
V
LKO
V
DDF
Supply Voltage (Program
and Erase lock-out)
Flash 2 V
Symbol Alt Parameter
Flash
Unit
70 85
t
AVAV
t
RC
Address Valid to Next Address Valid Min 70 85 ns
t
AVQV
t
ACC
Address Valid to Output Valid Max 70 85 ns
t
AXQX
(1)
t
OH
Address Transition to Output Transition Min 0 0 ns
t
EHQX
(1)
t
OH
Chip Enable High to Output Transition Min 0 0 ns
t
EHQZ
(1)
t
HZ
Chip Enable High to Output Hi-Z Max 20 20 ns
t
ELQV
(2)
t
CE
Chip Enable Low to Output Valid Max 70 85 ns
t
ELQX
(1)
t
LZ
Chip Enable Low to Output Transition Min 0 0 ns
t
GHQX
(1)
t
OH
Output Enable High to Output Transition Min 0 0 ns
t
GHQZ
(1)
t
DF
Output Enable High to Output Hi-Z Max 20 20 ns
t
GLQV
(2)
t
OE
Output Enable Low to Output Valid Max 20 20 ns
Symbol Parameter Device Test Condition Min Typ Max Unit
DQ0-DQ15
AI05207
VALID
A0-A20
EF
tAXQX
tAVAV
VALID
tAVQV
tELQV
tELQX
tGLQV
tGLQX
ADDR. VALID
CHIP ENABLE
OUTPUTS
ENABLED
DATA VALID STANDBY
GF
tGHQX
tGHQZ
tEHQX
tEHQZ

M36W432T85ZA6T

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
NOR Flash 32M (2Mx16) 85ns
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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