13©2016 Integrated Device Technology, Inc Revision A April 11, 2016
840S05I Data Sheet
Schematic Layout
Figure 3 shows an example 840S05I application schematic. This
schematic example focuses on functional connections and is not
configuration specific. Refer to the pin description and functional
tables in the datasheet to ensure that the logic control inputs are
properly set.
In this schematic, the device is operated at VDD=VDDA = 3.3V and
VDDO_A, VDDO_B and VDDO_REF=2.5V. An 18pF parallel
resonant 25MHz crystal is used with the recommended load
capacitors C1 = 33pF and C2 = 27pF for frequency accuracy.
Depending on the parasitic capacity on the crystal terminals of the
printed circuit board layout, these values might require a slight
adjustment to optimize the frequency accuracy. Crystals with other
load capacitance specifications can be used. This will require
adjusting C1 and C2. For this device, the crystal load capacitors are
required for proper operation.
As with any high speed analog circuitry, the power supply pins are
vulnerable to random noise. To achieve optimum jitter performance,
power supply isolation is required. The 840S05I provides separate
power supply pins to isolate any high switching noise from coupling
into the internal PLL.
In order to achieve the best possible filtering, it is recommended that
the placement of the filter components be on the device side of the
PCB as close to the power pins as possible. If space is limited, the
0.1µf capacitor in each power pin filter should be placed on the
device side. The other components can be on the opposite side of
the PCB.
Power supply filter recommendations are a general guideline to be
used for reducing external noise from coupling into the devices. The
filter performance is designed for a wide range of noise frequencies.
This low-pass filter starts to attenuate noise at approximately 10kHz.
If a specific frequency noise component is known, such as switching
power supplies frequencies, it is recommended that component
values be adjusted and if required, additional filtering be added.
Additionally, good general design practices for power plane voltage
stability suggests adding bulk capacitance in the local area of all
devices.
14©2016 Integrated Device Technology, Inc Revision A April 11, 2016
840S05I Data Sheet
Figure 3. 840S05I Application Schematic
C3
0.1uF
3.3V
C4
10uF
U1
XTAL_OUT
3
XTAL_IN
4
REF_SEL
6
REF_IN
7
F_SELB2
8
F_SELB1
14
F_SELB0
16
nREF_OE
9
MR/nOE
15
F_SELA0
28
F_SELA2
32
F_SELA1
29
SLEW0
30
SLEW1
31
REF_OUT
11
nc
12
nc
26
QB1
18
QB0
19
QA1
22
QA0
23
VDDA
1
VDD
2
VDD
25
VDDO_REF
10
VDDO_B
17
VDD0_A
21
GND
5
GND
13
GND
20
GND
24
GND
27
ePAD
33
FB1
BLM18BB221SN1
12
R5 10
VDD
C5
10uF
C6
0.1uF
C7
0.1uF
VDDA
C8
0.1uF
2.5V
C9
10uF
FB2
BLM18BB221SN1
12
C10
0.1uF
VDDO
VDDA
VDD
VDDO
C11
0.1uF
C12
0.1uF
C13
0.1uF
Zo = 50
2.5V LVCMOS Receiv er
R2
35
Place each 0.1uF bypass cap
directly adjacent to the
corresponding VDD, VDDA or VDDO_x
pin.
Zo = 50
R3
35
2.5V LVCMOS Receiv er
QB1
QB0
QA1
REF_OUT
QA0
VDD
To Logic
Input
pins
VDD
RU2
Not Install
RU1
1K
RD2
1K
To Logic
Input
pins
RD1
Not Install
Set Logic
Input to '1'
Set Logic
Input to '0'
Logic Control Input Examples
MR/nOE
REF_SEL
F_SELB1
F_SELB2
nREF_OE
F_SELB0
F_SELA2
F_SELA1
F_SELA0
SLEW0
SLEW1
3.3V
Zo = 50 OhmR1
43
Ro
=7 Ohm
Driver_LVCMOS
C2
27pF
C1
33pF
X1
25MHz (18pf)
15©2016 Integrated Device Technology, Inc Revision A April 11, 2016
840S05I Data Sheet
Power Considerations
This section provides information on power dissipation and junction temperature for the 840S05I.
Equations and example calculations are also provided.
1. Power Dissipation.
The total power dissipation for the 840S05I is the sum of the core power plus the analog power plus the power dissipation in the load(s). The
following is the power dissipation for V
DD
= 3.3V + 5% = 3.465V, which gives worst case results.
The maximum current at 85°C is as follows:
I
DD_MAX
= 160mA
I
DDA_MAX
= 20mA
Core Power Dissipation
Power (core)
MAX
= V
DD_MAX
* (I
DD
+ I
DDA
) = 3.465V *(160mA + 20mA) = 623.7mW
LVCMOS Output Power Dissipation
Output Impedance R
OUT
Power Dissipation due to Loading 50 to V
DD
/2
Output Current I
OUT
= V
DD_MAX
/ [2 * (50 + R
OUT
)] = 3.465V / [2 * (50 + 22)] = 24.06mA
Power Dissipation on the R
OUT
per LVCMOS output
Power (R
OUT
) = R
OUT
* (I
OUT
)
2
= 22 * (24.06mA)
2
= 12.74mW per output
Total Power Dissipation on the R
OUT
Total Power (R
OUT
) = 12.74mW * 5 = 63.7mW
Dynamic Power Dissipation at 25MHz (REF_OUT)
Power (25MHz) = C
PD
* Frequency * (V
DDO
)
2
= 4pF * 25MHz * (3.465V)
2
= 1.2mW per output
Total Power (25MHz) = 1.2mW * 1 = 1.2mW
Dynamic Power Dissipation at 166.67MHz (QA[1:0], QB[1:0])
Power (166.67MHz) = C
PD
* Frequency * (V
DDO
)
2
= 16pF * 166.67MHz * (3.465V)
2
= 32.02mW per output
Total Power (166.67MHz) = 32.02mW * 4 = 128.08mW
Total Power Dissipation
Total Power
= Power (core) + Power (output) + Total Power (25MHz) + Total Power (166.67MHz)
= 623.7mW + 63.7mW + 1.2mW + 128.08mW
= 816.68mW

840S05AYILF

Mfr. #:
Manufacturer:
IDT
Description:
Clock Synthesizer / Jitter Cleaner Crystal LVCMOS LVTTL Freq Synth
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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