NCP1060, NCP1063
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4
Table 2. TYPICAL APPLICATIONS
VCC supplied from DSS
Output voltage is below 9.0
V typ.
LIM/OPP pin floating − no
limit output power
Resistive divider formed
by R2, R3 sets output volt-
age
If the output voltage is
above 9.0 V typ. between
V
CC(ON)
level and V
OVP
level − VCC supplied from
output via D4
LIM/OPP pin floating − no
limit output power
Resistive divider formed
by R2, R3 sets output volt-
age
Typical Non−isolated Application – Flyback Converter
VCC supplied from auxil-
iary winding
Resistive divider formed
by R2, R3 sets output pow-
er limit and over power
protection
Optocoupler feedback, re-
sistive divider formed by
R6, R7 sets output voltage
Typical Isolated Application – Flyback Converter
NCP1060, NCP1063
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5
LIM/OPP
FB
COMP
GND
DRAIN
VCC
S
R
Q
VCC
Management
Reset
UVLO
V
dd
t
SCP
I
pflag
SCP
t
recovery
80−
ms Filter
Line
Detection
OFF UVLO
S
R
Q
R
COMP(up)
UVLO
TSD
LEB
SoftStart
Reset
Reset SS as recoving from
SCP, TSD, VCC OVP or UVLO
I
COMP
to CS setpoint
I
Freeze
I
pk(0)
V
CC
OSC
Sawtooth
Foldback
LineOK
LineOK
Sawtooth
I
pflag
Ramp
compensation
OFF
V
CC
OVP
SKIP= ”1”
è
Shut down some
blocks to reduce consumption
SKIP
I
LMOP
V
LMOP
I
LMDEC
I
LMDEC
I
LMOP
0
I
PKL
I
FB
V
COMP(REF)
I
COMPskip
I
COMPfault
I
LMOP (min)
I
LMOP (max )
Jittering
V
OVP
FB/COMP
Processing
Figure 2. Simplified Internal Circuit Architecture
NCP1060, NCP1063
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Table 3. MAXIMUM RATING TABLE (All voltages related to GND terminal)
Rating
Symbol Value Unit
Power supply voltage, V
CC
pin, continuous voltage V
CC
−0.3 to 20 V
Voltage on all pins, except Drain and V
CC
pin Vinmax −0.3 to 10 V
Drain voltage BVdss −0.3 to 700 V
Maximum Current into V
CC
pin I
CC
10 mA
Drain Current Peak during Transformer Saturation (T
J
= 150°C, Note 2):
NCP1060
NCP1063
Drain Current Peak during Transformer Saturation (T
J
= 125°C, Note 2):
NCP1060
NCP1063
Drain Current Peak during Transformer Saturation (T
J
= 25°C, Note 2):
NCP1060
NCP1063
I
DS(PK)
300
850
335
950
520
1500
mA
Thermal Resistance Junction−to−Air – PDIP7 with 200 mm@ of 35−m copper area
R
θ
JA
115 °C/W
Thermal Resistance Junction−to−Air – SOIC10 with 200 mm@ of 35−m copper area
R
θ
JA
132 °C/W
Thermal Resistance Junction−to−Air – SOIC16 with 200 mm@ of 35−m copper area
R
θ
JA
104 °C/W
Junction Temperature Range T
J
−40 to +150 °C
Storage Temperature Range T
stg
−60 to +150 °C
Human Body Model ESD Capability (All pins except HV pin) per JEDEC JESD22−A114F HBM 2 kV
Charged−Device Model ESD Capability per JEDEC JESD22−C101E CDM 1 kV
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. This device contains latch−up protection and exceeds 100 mA per JEDEC Standard JESD78.
2. Maximum drain current I
DS(PK)
is obtained when the transformer saturates. It should not be mixed with short pulses that can be seen at turn
on. Figure 3 below provides spike limits the device can tolerate.
Figure 3. Spike Limits

NCP1063AP060G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Switching Controllers HV SWITCHER FOR LOW POWER
Lifecycle:
New from this manufacturer.
Delivery:
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