NCP81241
www.onsemi.com
10
Table 4. ELECTRICAL CHARACTERISTICS (Unless otherwise stated: −40°C < T
A
< 125°C; Vcc = 5 V; C
VCC
= 0.1 mF)
Parameter UnitsMaxTypMinTest Conditions
LOW−SIDE MOSFET DRIVER
Pull−up Resistance, Sourcing Current
0.9 2.8
W
Low Side Driver Sourcing Current 5.56 A
Pull−down Resistance, Sinking Current 0.8 2
W
Low Side Driver Sinking Current 12.5 A
LG Rise Time 3 nF load 6 16 30 ns
LG Fall Time 3 nF load 6 11 30 ns
LG Turn−On Propagation
Delay tpdh
DRVL
CLOAD = 3 nF 11 30 ns
PVCC Quiescent Current EN = L (Shutdown)
EN = H, no switching
1.0
490
10
mA
BOOTSTRAP RECTIFIER SWITCH
On Resistance
EN=L or EN=H with DRVL=H 5 9 22
W
3. Guaranteed by design or characterization data, not in production test.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
DRVH−SW
DRVL
SW
1 V
Figure 5. Driver Timing Diagram
t
fDRVL
t
pdhDRVH
V
TH
V
TH
t
rDRVH
t
fDRVH
t
pdhDRVL
t
rDRVL
NOTE: Timing is referenced to the 90% and the 10% points, unless otherwise stated.
Table 5. VR12.1 VID TABLE
VID7 VID6 VID5 VID4 VID3 VID2 VID1 VID0 Voltage (V) HEX
0 0 0 0 0 0 0 0 0 00
0 0 0 0 0 0 0 1 0.25 01
0 0 0 0 0 0 1 0 0.255 02
0 0 0 0 0 0 1 1 0.26 03
0 0 0 0 0 1 0 0 0.265 04
0 0 0 0 0 1 0 1 0.27 05
0 0 0 0 0 1 1 0 0.275 06
0 0 0 0 0 1 1 1 0.28 07
