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NCP81241MNTXG

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27
NCP81241
www.onsemi.com
7
Table 4. ELECTRICAL CHARACTERISTICS (Unless otherwise stated: −40°C < T
A
< 125°C; Vcc = 5 V; C
VCC
= 0.1 mF)
Parameter
Test Conditions Min Typ Max Units
ERROR AMPLIFIER
Input Bias Current
@ 1.3 V −1.5 1.5 uA
Open Loop DC Gain CL = 20 pF to GND,
RL = 10 KW to GND
80 dB
Open Loop Unity Gain Bandwidth CL = 20 pF to GND,
RL = 10 KW to GND
20 MHz
Slew Rate
DVin = 100 mV, G = −10 V/V,
DVout = 1.5 V – 2.5 V,
CL = 20 pF to GND,
DC Load = 10 k to GND
25
V/ms
Maximum Output Voltage I
SOURCE
= 2.0 mA 3.5 − − V
Minimum Output Voltage I
SINK
= 2.0 mA − − 1 V
DIFFERENTIAL VOLTAGE−SENSE AMPLIFIER
Input Bias Current
VSP, CSREF = 1.3 V −15 − 15
mA
VSP Input Voltage Range −0.3 − 3.0 V
VSN Input Voltage Range −0.3 − 0.3 V
−3 dB Bandwidth CL = 20 pF to GND,
RL = 10 KW to GND
10 MHz
Closed Loop DC gain VS+ to VS− = 0.5 to 1.3 V 1.0 V/V
DIFFERENTIAL CURRENT−SENSE AMPLIFIER
Offset Voltage (Vos) (Note 3)
−300 300
mV
Input Bias Current CSSUM = CSREF = 1.2 V −10 +10
mA
Open Loop Gain 80 dB
Current Sense Unity Gain Bandwidth C
L
= 20 pF to GND,
R
L
= 10 KW to GND
10 MHz
INPUT SUPPLY
Supply Voltage Range
4.75 5.25 V
VCC Quiescent Current
Controller + Driver
EN = high, PS0, PS1,PS2 − 15 18 mA
EN = high, PS3 Mode − 8 10 mA
EN = high, PS4 Mode (at 25°C) − 200
mA
EN = low − − 80
mA
UVLO Threshold VCC rising − 4.5 V
VCC falling 4 4.08 − V
VCC UVLO Hysteresis 275 mV
UVLO Threshold VRMP Rising 4.05 V
VRMP Falling 3.0 V
DAC SLEW RATE
Soft Start Slew Rate
Fast_SR/4
mV/ms
Slew Rate Slow Fast_SR/2
Fast_SR/4
(default)
Fast_SR/8
Fast_SR/16
mV/ms
Slew Rate Fast 10
mV/ms
3. Guaranteed by design or characterization data, not in production test.
NCP81241
www.onsemi.com
8
Table 4. ELECTRICAL CHARACTERISTICS (Unless otherwise stated: −40°C < T
A
< 125°C; Vcc = 5 V; C
VCC
= 0.1 mF)
Parameter UnitsMaxTypMinTest Conditions
ENABLE INPUT
Enable High Input Leakage Current
External 1 K pull−up to 3.3 V − 1.0
mA
Upper Threshold V
UPPER
0.8 V
Lower Threshold V
LOWER
0.3 V
Total Hysteresis V
UPPER
– V
LOWER
90 mV
IOUT OUTPUT
Input Referred Offset Voltage
Ilimit to CSREF −7.5 7.5 mV
Output Source Current 850
mA
Current Gain (IOUT
CURRENT
) /
(ILIMIT
CURRENT
), R
ILIM
= 20 k,
R
IOUT
= 5.0 k,
DAC = 0.8 V, 1.25 V, 1.52 V
9.75 10 10.25
OSCILLATOR
Switching Frequency Range
250 − 1200 KHz
ZERO CURRENT DETECT (ZCD)
ZCD threshold, DCM detection
SW wrt PGND 0 mV
OUTPUT OVER VOLTAGE & UNDER VOLTAGE PROTECTION (OVP & UVP)
Absolute Over Voltage Threshold Dur-
ing Soft Start
CSREF 2.4 2.5 2.6 V
Over Voltage Threshold Above DAC VSP rising 350 400 440 mV
Over Voltage Delay VSP rising 50 ns
Under−voltage Delay Ckt in development 5
ms
VR12.1 DAC
System Voltage Accuracy
−40 to 125°C
0.2550 V < DAC < 0.795 V
0.8 V < DAC < 0.995 V
1.0 V < DAC < 1.52 V
−8
−10
−0.9
8
10
+0.9
mV
mV
%
OVERCURRENT PROTECTION
ILIM Threshold Current
(OCP shutdown after 50 ms delay)
(PS0) Rlim = 20 k 9.0 10 11.0
mA
ILIM Threshold Current
(immediate OCP shutdown)
(PS0) Rlim = 20 k 13.5 15 16.5
mA
ILIM Threshold Current
(OCP shutdown after 50 ms delay)
(PS1, PS2, PS3) Rlim = 20 k 10
mA
ILIM Threshold Current
(immediate OCP shutdown)
(PS1, PS2, PS3) Rlim = 20 k,
PS0 mode
15
mA
VR_HOT#
Output Low Voltage
I_VRHOT = −4 mA 0.3 V
Output Leakage Current High Impedance State −1.0 − 1.0
mA
TSENSE
Alert# Assert Threshold
508 mV
Alert# De−assert Threshold 490 mV
VRHOT Assert Threshold 488 mV
VRHOT Rising Threshold 470 mV
TSENSE Bias Current 115 120 127
mA
3. Guaranteed by design or characterization data, not in production test.
NCP81241
www.onsemi.com
9
Table 4. ELECTRICAL CHARACTERISTICS (Unless otherwise stated: −40°C < T
A
< 125°C; Vcc = 5 V; C
VCC
= 0.1 mF)
Parameter UnitsMaxTypMinTest Conditions
ADC
Voltage Range
0 2 V
Total Unadjusted Error (TUE) −1.25 1.25 %
Differential Nonlinearity (DNL) 8−bit, No missing codes 1 LSB
Power Supply Sensitivity ±1 %
Conversion Time 30
ms
Round Robin 90
ms
VR_RDY,(Power Good) OUTPUT
Output Low Saturation Voltage
I
VR_RDY
= 4 mA − − 0.3 V
Rise Time
External pull−up of 1 KW to 3.3 V,
C
TOT
= 45 pF, DVo = 10% to 90%
− 100 ns
Fall Time
External pull−up of 1 KW to 3.3 V,
C
TOT
= 45 pF, DVo = 90% to 10%
10 ns
Output Voltage at Power−up
VR_RDY pulled up to 5 V via 2 KW
− − 1.2 V
Output Leakage Current When High VR_RDY= 5.0 V −1.0 − 1.0
mA
VR_RDY Delay (rising) DAC = TARGET to VR_RDY 8
ms
VR_RDY Delay (falling) From OCP − 5 −
ms
SCLK, SDIO
V
IL
Input Low Voltage 0.44 V
V
IH
Input High Voltage, including
hysteresis
0.72 V
V
OH
Output High Voltage 1.05 V
V
OL
SDIO, ALERT#, and VRHOT .3 V
Leakage Current −1 1
mA
Pad Capacitance (Note 3) 4.0 pF
VR clock to data delay (Tco) (Note 3) 4 8.3 ns
Setup time (Tsu) (Note 3) 7 ns
Hold time (Thld) (Note 3) 14 ns
HIGH−SIDE MOSFET DRIVER
Pull−up Resistance, Sourcing Current
BST = PVCC 1.2 2.8
W
High Side Driver Sourcing Current BST = PVCC 4.17 A
Pull−down Resistance, Sinking Current BST = PVCC 0.8 2.0
W
High Side Driver Sinking Current BST = PVCC 6.25 A
HG Rise Time VCC = 5 V, 3 nF load,
BST − SW = 5 V
6 16 30 ns
HG Fall Time VCC = 5 V, 3 nF load,
BST − SW = 5 V
6 11 30 ns
DRVH Turn−Off Propagation Delay
tpdhDRVH
CLOAD = 3 nF 7.0 30 ns
HG Turn on Propagation Delay tpdl
DRVH
CLOAD = 3 nF 7.0 30 ns
SW Pull−Down Resistance SW to PGND 2
KW
HG Pull−Down Resistance HG to SWBST−SW = 0 V 295
KW
3. Guaranteed by design or characterization data, not in production test.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27

NCP81241MNTXG

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Manufacturer:
ON Semiconductor
Description:
Switching Voltage Regulators INDUSTRIAL TEMPERATU
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