A
Microchip Technology Company
©2011 Silicon Storage Technology, Inc. DS25034A 09/11
Data Sheet
www.microchip.com
Features
Organized as 256K x16
Single Voltage Read and Write Operations
1.65-1.95V
Superior Reliability
Endurance: 100,000 Cycles (typical)
Greater than 100 years Data Retention
Low Power Consumption (typical values at 5 MHz)
Active Current: 5 mA (typical)
Standby Current: 5 µA (typical)
Sector-Erase Capability
Uniform 2 KWord sectors
Block-Erase Capability
Uniform 32 KWord blocks
Fast Read Access Time
–70ns
Latched Address and Data
Fast Erase and Word-Program
Sector-Erase Time: 36 ms (typical)
Block-Erase Time: 36 ms (typical)
Chip-Erase Time: 140 ms (typical)
Word-Program Time: 28 µs (typical)
Automatic Write Timing
Internal V
PP
Generation
End-of-Write Detection
Toggle Bit
Data# Polling
CMOS I/O Compatibility
JEDEC Standard
Flash EEPROM Pinouts and command sets
Packages Available
48-ball TFBGA (6mm x 8mm)
48-ball WFBGA (4mm x 6mm) Micro-Package
48-ball XFLGA (4mm x 6mm) Micro-Package
All devices are RoHS compliant
4 Mbit (x16) Multi-Purpose Flash
SST39WF400B
The SST39WF400B is a 256K x16 CMOS Multi-Purpose Flash (MPF) manufac-
tured with proprietary, high-performance CMOS SuperFlash technology. The split-
gate cell design and thick-oxide tunneling injector attain better reliability and man-
ufacturability compared to alternate approaches. The SST39WF400B writes (Pro-
gram or Erase) with a 1.65-1.95V power supply. This device conforms to JEDEC
standard pin assignments for x16 memories.
©2011 Silicon Storage Technology, Inc. DS25034A 09/11
2
4 Mbit (x16) Multi-Purpose Flash
SST39WF400B
Data Sheet
A
Microchip Technology Company
Product Description
The SST39WF400B is a 256K x16 CMOS Multi-Purpose Flash (MPF) manufactured with SST proprie-
tary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tun-
neling injector attain better reliability and manufacturability compared to alternate approaches. The
SST39WF400B writes (Program or Erase) with a 1.65-1.95V power supply. This device conforms to
JEDEC standard pin assignments for x16 memories.
The SST39WF400B features high-performance Word-Programming which provides a typical Word-
Program time of 28 µsec. It uses Toggle Bit or Data# Polling to detect the completion of the Program or
Erase operation. On-chip hardware and software data protection schemes protect against inadvertent
writes. Designed, manufactured, and tested for a wide spectrum of applications, the SST39WF400B is
offered with a guaranteed typical endurance of 100,000 cycles. Data retention is rated at greater than
100 years.
The SST39WF400B is suited for applications that require convenient and economical updating of pro-
gram, configuration, or data memory. For all system applications, this MPF significantly improves per-
formance and reliability, while lowering power consumption. It inherently uses less energy during Erase
and Program than alternative flash technologies. When programming a flash device, the total energy
consumed is a function of the applied voltage, current, and time of application. For any given voltage
range, SuperFlash technology uses less current to program and has a shorter erase time; therefore,
the total energy consumed during any Erase or Program operation is less than alternative flash tech-
nologies. These devices also improve flexibility while lowering the cost for program, data, and configu-
ration storage applications.
SuperFlash technology provides fixed Erase and Program times independent of the number of Erase/
Program cycles that have occurred. Consequently, the system software or hardware does not have to
be modified or de-rated as is necessary with alternative flash technologies, whose Erase and Program
times increase with accumulated Erase/Program cycles.
To meet surface mount requirements, the SST39WF400B is offered in 48-ball TFBGA, 48-ball
WFBGA, and a 48-ball XFLGA packages. See Figures 2 and 3 for pin assignments and Table 1 for pin
descriptions.
©2011 Silicon Storage Technology, Inc. DS25034A 09/11
3
4 Mbit (x16) Multi-Purpose Flash
SST39WF400B
Data Sheet
A
Microchip Technology Company
Block Diagram
Figure 1: Functional Block Diagram
Y-Decoder
I/O Buffers and Data Latches
1370 B1.0
Address Buffer Latches
X-Decoder
DQ
15
-DQ
0
Memor y Address
OE#
CE#
WE#
SuperFlash
Memor y
Control Logic

SST39WF400B-70-4I-B3KE

Mfr. #:
Manufacturer:
Microchip Technology
Description:
NOR Flash 4M (256Kx16) 70ns Industrial Temp
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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