©2011 Silicon Storage Technology, Inc. DS25034A 09/11
13
4 Mbit (x16) Multi-Purpose Flash
SST39WF400B
Data Sheet
A
Microchip Technology Company
Table 7: Device Geometry Information for SST39WF400B
Address Data Data
27H 0013H Device size = 2
N
Byte (0013H = 19; 2
19
= 512 KByte)
28H 0001H Flash Device Interface description; 0001H = x16-only asynchronous interface
29H 0000H
2AH 0000H Maximum number of byte in multi-byte write = 2
N
(0000H = not supported)
2BH 0000H
2CH 0002H Number of Erase Sector/Block sizes supported by device
2DH 007FH Sector Information (y+1=Number of sectors; z x 256B = sector size)
2EH 0000H y +1 = 127+1=128sectors (007FH = 127)
2FH 0010H
30H 0000H z = 16 x 256 Bytes = 4 KByte/sector (0010H = 16)
31H 0007H Block Information (y+1=Number of blocks; z x 256B = block size)
32H 0000H y+1=7+1=8blocks(0007H = 7)
33H 0000H
34H 0001H z = 256 x 256 Bytes = 64 KByte/block (0100H = 256)
T7.1 25034
©2011 Silicon Storage Technology, Inc. DS25034A 09/11
14
4 Mbit (x16) Multi-Purpose Flash
SST39WF400B
Data Sheet
A
Microchip Technology Company
Electrical Specifications
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute
Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these conditions or conditions greater than those defined in the
operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating con-
ditions may affect device reliability.)
Temperature Under Bias ............................................. -55°C to +125°C
Storage Temperature ................................................ -65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential ............................-0.5V to V
DD
+0.5V
Transient Voltage (<20 ns) on Any Pin to Ground Potential ..................-2.0V to V
DD
+2.0V
Voltage on A
9
Pin to Ground Potential ...................................... -0.5V to 11V
Package Power Dissipation Capability (T
A
= 25°C) .................................. 1.0W
Surface Mount Solder Reflow Temperature ...........................260°C for 10 seconds
Output Short Circuit Current
1
.................................................. 50mA
1. Outputs shorted for no more than one second. No more than one output shorted at a time.
Table 8: Operating Range
Range Ambient Temp V
DD
Commercial 0°C to +70°C 1.65-1.95V
Industrial -40°C to +85°C 1.65-1.95V
T8.1 25034
Table 9: AC Conditions of Test
1
1. See Figures 16 and 17
Input Rise/Fall Time Output Load
5ns C
L
=30pF
T9.1 25034
©2011 Silicon Storage Technology, Inc. DS25034A 09/11
15
4 Mbit (x16) Multi-Purpose Flash
SST39WF400B
Data Sheet
A
Microchip Technology Company
Power-Up Specifications
All functionalities and DC specifications are specified for a V
DD
ramp rate faster than 1V per 100 ms
(0V to 1.8V in less than 180 ms). In addition, a V
DD
ramp rate slower than 1V per 20 µs is recom-
mended. See Table 10 and Figure 4 for more information.
Figure 4:Power-Up Reset Diagram
Table 10:Recommended System Power-up Timings
Symbol Parameter Minimum Units
T
PU-READ
1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
V
DD
Min to Read Operation 100 µs
T
PU-WRITE
1
V
DD
Min to Write Operation 100 µs
T10.0 25034
1370 F37.1
V
DD
CE#
T
PU-READ
V
DD
min
0V

SST39WF400B-70-4I-B3KE

Mfr. #:
Manufacturer:
Microchip Technology
Description:
NOR Flash 4M (256Kx16) 70ns Industrial Temp
Lifecycle:
New from this manufacturer.
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