©2011 Silicon Storage Technology, Inc. DS25034A 09/11
16
4 Mbit (x16) Multi-Purpose Flash
SST39WF400B
Data Sheet
A
Microchip Technology Company
DC Characteristics
Table 11:DC Operating Characteristics, V
DD
= 1.65-1.95V
1
1. Typical conditions for the Active Current shown on the front page of the data sheet are average values at 25°C
(room temperature), and V
DD
= 1.8V. Not 100% tested.
Symbol Parameter
Limits
Test ConditionsMin Max Units
I
DD
Power Supply Current Address input=V
ILT
/V
IHT,
at f=5 MHz,
V
DD
=V
DD
Max
Read 15 mA CE#=V
IL
, OE#=WE#=V
IH
, all I/Os
open
Program and Erase 20 mA CE#=WE#=V
IL
, OE#=V
IH
I
SB
Standby V
DD
Current
2
2. 40 µA is the maximum I
SB
for all SST39WF400B commercial grade devices. 40 µA is the maximum I
SB
for all
SST39WF400B industrial grade devices. For all SST39WF400B commercial and industrial devices, I
SB
typical is 5 µA.
40 µA CE#=V
DD
,V
DD
=V
DD
Max
I
LI
Input Leakage Current 1 µA V
IN
=GND to V
DD
,V
DD
=V
DD
Max
I
LO
Output Leakage Current 1 µA V
OUT
=GND to V
DD
,V
DD
=V
DD
Max
V
IL
Input Low Voltage 0.2V
DD
V
DD
=V
DD
Min
V
IH
Input High Voltage 0.8V
DD
VV
DD
=V
DD
Max
V
OL
Output Low Voltage 0.1 V I
OL
=100 µA, V
DD
=V
DD
Min
V
OH
Output High Voltage V
DD
-0.1 V I
OH
=-100 µA, V
DD
=V
DD
Min
T11.0 25034
Table 12:Capacitance (T
A
= 25°C, f=1 MHz, other pins open)
Parameter Description Test Condition Maximum
C
I/O
1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
I/O Pin Capacitance V
I/O
=0V 12pF
C
IN
1
Input Capacitance V
IN
=0V 6pF
T12.0 25034
Table 13:Reliability Characteristics
Symbol Parameter Minimum Specification Units Test Method
N
END
1,2
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
2. N
END
endurance rating is qualified as a 10,000 cycle minimum for the whole device. A sector- or block-level rating would
result in a higher minimum specification.
Endurance 10,000 Cycles JEDEC Standard A117
T
DR
1
Data Retention 100 Years JEDEC Standard A103
I
LTH
1
Latch Up 100 + I
DD
mA JEDEC Standard 78
T13.0 25034
©2011 Silicon Storage Technology, Inc. DS25034A 09/11
17
4 Mbit (x16) Multi-Purpose Flash
SST39WF400B
Data Sheet
A
Microchip Technology Company
AC Characteristics
Table 14:Read Cycle Timing Parameters
Symbol Parameter
70 ns
UnitsMin Max
T
RC
Read Cycle Time 70 ns
T
CE
Chip Enable Access Time 70 ns
T
AA
Address Access Time 70 ns
T
OE
Output Enable Access Time 35 ns
T
CLZ
1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
CE# Low to Active Output 0 ns
T
OLZ
1
OE# Low to Active Output 0 ns
T
CHZ
1
CE# High to High-Z Output 40 ns
T
OHZ
1
OE# High to High-Z Output 40 ns
T
OH
1
Output Hold from Address Change 0 ns
T14.0 25034
Table 15:Program/Erase Cycle Timing Parameters
Symbol Parameter Min Max Units
T
BP
Word-Program Time 40 µs
T
AS
Address Setup Time 0 ns
T
AH
Address Hold Time 50 ns
T
CS
WE# and CE# Setup Time 0 ns
T
CH
WE# and CE# Hold Time 0 ns
T
OES
OE# High Setup Time 0 ns
T
OEH
OE# High Hold Time 10 ns
T
CP
CE# Pulse Width 50 ns
T
WP
WE# Pulse Width 50 ns
T
WPH
1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
WE# Pulse Width High 30 ns
T
CPH
1
CE# Pulse Width High 30 ns
T
DS
Data Setup Time 50 ns
T
DH
1
Data Hold Time 0 ns
T
IDA
1
Software ID Access and Exit Time 150 ns
T
SE
Sector-Erase 50 ms
T
BE
Block-Erase 50 ms
T
SCE
Chip-Erase 200 ms
T15.0 25034
©2011 Silicon Storage Technology, Inc. DS25034A 09/11
18
4 Mbit (x16) Multi-Purpose Flash
SST39WF400B
Data Sheet
A
Microchip Technology Company
Figure 5: Read Cycle Timing Diagram
Figure 6: WE# Controlled Program Cycle Timing Diagram
1370 F03.0
ADDRESS A
MS-0
DQ
15-0
WE#
OE#
CE#
T
CE
T
RC
T
AA
T
OE
T
OLZ
V
IH
HIGH-Z
T
CLZ
T
OH
T
CHZ
HIGH-Z
DATA VAL I DDATA VAL I D
T
OHZ
Note: A
MS
= Most significant address
A
MS
=A
17
for SST39WF400B
1370 F04.0
ADDRESS A
MS-0
DQ
15-0
T
DH
T
WPH
T
DS
T
WP
T
AH
T
AS
T
CH
T
CS
CE#
SW0 SW1 SW2
5555 2AAA 5555 ADDR
XXAA XX55 XXA0 DATA
INTERNAL PROGRAM OPERATION STARTS
WORD
(ADDR/DATA)
OE#
WE#
T
BP
Note: A
MS
= Most significant address
A
MS
=A
17
for SST39WF400B
X can be V
IL
or V
IH,
but no other value.

SST39WF400B-70-4I-B3KE

Mfr. #:
Manufacturer:
Microchip Technology
Description:
NOR Flash 4M (256Kx16) 70ns Industrial Temp
Lifecycle:
New from this manufacturer.
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