841S012DI Datasheet
©2016 Integrated Device Technology, Inc January 4, 20166
ABSOLUTE MAXIMUM RATINGS
Supply Voltage, V
DD
4.6V
Inputs, V
I
-0.5V to V
DD
+ 0.5 V
Outputs, V
O
-0.5V to V
DDO
+ 0.5V
Package Thermal Impedance, θ
JA
31.4°C/W (0 mps)
Storage Temperature, T
STG
-65°C to 150°C
NOTE: Stresses beyond those listed under Absolute
Maximum Ratings may cause permanent damage to the
device. These ratings are stress specifi cations only. Functional
operation of product at these conditions or any conditions beyond
those listed in the DC Characteristics or AC Characteristics is not
implied. Exposure to absolute maximum rating conditions for ex-
tended periods may affect product reliability.
TABLE 4A. POWER SUPPLY DC CHARACTERISTICS, V
DD
= V
DD_REFOUT
= V
DDOB
= V
DDOC
= 3.3V±5%, TA = -40°C TO 85°C
TABLE 4B. LVCMOS/LVTTL DC CHARACTERISTICS, V
DD
= V
DD_REFOUT
= V
DDOB
= V
DDOC
= 3.3V±5%, TA = -40°C TO 85°C
Symbol Parameter Test Conditions Minimum Typical Maximum Units
V
DD
Core Supply Voltage 3.135 3.3 3.465 V
V
DDA
Analog Supply Voltage V
DD
– 0.20 3.3 V
DD
V
V
DDOB,
V
DDOC
Output Supply Voltage 3.135 3.3 3.465 V
I
DD
Power Supply Current HCSL Loaded, LVCMOS No Load 300 mA
I
DDA
Analog Supply Current 20 mA
Symbol Parameter Test Conditions Minimum Typical Maximum Units
V
IH
Input High Voltage 2 V
DD
+ 0.3 V
V
IL
Input Low Voltage -0.3 0.8 V
I
IH
Input
High Current
QA_OE, QBC_OE,
nMR, SSC0, SSC1,
V
DD
= V
IN
= 3.465V 10 µA
F_SELA[0:1], F_
SELB[0:2].
F_SELC[0:2],
REF_OE, BYPASS,
REF_IN, REF_SEL
V
DD
= V
IN
= 3.465V 150 µA
I
IL
Input
Low Current
QA_OE, QBC_OE,
nMR, SSC0, SSC1,
V
DD
= 3.465V, V
IN
= 0V -150 µA
F_SELA[0:1], F_
SELB[0:2].
F_SELC[0:2],
REF_OE, BYPASS,
REF_IN, REF_SEL
V
DD
= 3.465V, V
IN
= 0V -10 µA
V
OH
Output High Voltage V
DDOB,
V
DDOC
= I
OH
= -2mA 2.6 V
V
OL
Output Low Voltage V
DDOB,
V
DDOC
= I
OL
= 2mA 0.5 V
TABLE 5. CRYSTAL CHARACTERISTICS
Parameter Test Conditions Minimum Typical Maximum Units
Mode of Oscillation Fundamental
Frequency 25 MHz
Equivalent Series Resistance (ESR) 50
Ω
Shunt Capacitance 7pF
Drive Level 100 µW
NOTE: Characterized using an 18pF parallel resonant crystal.