Operation M48T201Y, M48T201V
10/37
2 Operation
Automatic backup and write protection for an external SRAM is provided through V
OUT
,
E
CON
, and G
CON
pins. (Users are urged to insure that voltage specifications, for both the
supervisor chip and external SRAM chosen, are similar.) The SNAPHAT
®
containing the
lithium energy source is used to retain the RTC and RAM data in the absence of V
CC
power
through the V
OUT
pin. The chip enable output to RAM (E
CON
) and the output enable output
to RAM (G
CON
) are controlled during power transients to prevent data corruption. The date
is automatically adjusted for months with less than 31 days and corrects for leap years (valid
until 2100). The internal watchdog timer provides programmable alarm windows.
The nine clock bytes (7FFFFh-7FFF9h and 7FFF1h) are not the actual clock counters, they
are memory locations consisting of BiPORT™ READ/WRITE memory cells within the static
RAM array. Clock circuitry updates the clock bytes with current information once per second.
The information can be accessed by the user in the same manner as any other location in
the static memory array. Byte 7FFF8h is the clock control register. This byte controls user
access to the clock information and also stores the clock calibration setting.
Byte 7FFF7h contains the watchdog timer setting. The watchdog timer can generate either a
reset or an interrupt, depending on the state of the watchdog steering bit (WDS). Bytes
7FFF6h-7FFF2h include bits that, when programmed, provide for clock alarm functionality.
Alarms are activated when the register content matches the month, date, hours, minutes,
and seconds of the clock registers. Byte 7FFF1h contains century information. Byte 7FFF0h
contains additional flag information pertaining to the watchdog timer, the alarm condition,
the battery status and square wave output operation. 4 bits are included within this register
(RS0-RS3) that are used to program the square wave output frequency (see Tabl e 7 o n
page 21). The M48T201Y/V also has its own power-fail detect circuit. This control circuitry
constantly monitors the supply voltage for an out of tolerance condition. When V
CC
is out of
tolerance, the circuit write protects the TIMEKEEPER
®
register data and external SRAM,
providing data security in the midst of unpredictable system operation. As V
CC
falls below
the battery backup switchover voltage (V
SO
), the control circuitry automatically switches to
the battery, maintaining data and clock operation until valid power is restored.
2.1 Address decoding
The M48T201Y/V accommodates 19 address lines (A0-A18) which allow direct connection
of up to 512 K bytes of static RAM. Regardless of SRAM density used, timekeeping,
watchdog, alarm, century, flag, and control registers are located in the upper RAM locations.
All TIMEKEEPER registers reside in the upper RAM locations without conflict by inhibiting
the G
CON
(output enable RAM) signal during clock access. The RAM's physical locations
are transparent to the user and the memory map looks continuous from the first clock
address to the upper most attached RAM addresses.
M48T201Y, M48T201V Operation
11/37
Table 2. Operating modes
Note: X = V
IH
or V
IL
; V
SO
= battery backup switchover voltage
2.2 Read mode
The M48T201Y/V executes a READ cycle whenever W (WRITE enable) is high and E (chip
enable) is low. The unique address specified by the address inputs (A0-A18) defines which
one of the on-chip TIMEKEEPER
®
registers or external SRAM locations is to be accessed.
When the address presented to the M48T201Y/V is in the range of 7FFFFh-7FFF0h, one of
the on-board TIMEKEEPER registers is accessed and valid data will be available to the
eight data output drivers within t
AVQV
after the address input signal is stable, providing that
the E
and G access times are also satisfied. If they are not, then data access must be
measured from the latter occurring signal (E
or G) and the limiting parameter is either t
ELQV
for E
or t
GLQV
for G rather than the address access time. When one of the on-chip
TIMEKEEPER registers is selected for READ, the G
CON
signal will remain inactive
throughout the READ cycle.
When the address value presented to the M48T201Y/V is outside the range of
TIMEKEEPER registers, an external SRAM location will be selected. In this case the G
signal will be passed to the G
CON
pin, with the specified delay times of t
AOEL
or t
OERL
.
Figure 4. G
CON
timing when switching between RTC and external SRAM
Mode V
CC
EGW
DQ7-
DQ0
Power
Deselect
4.5 V to 5.5 V
or
3.0 V to 3.6 V
V
IH
X X High-Z Standby
WRITE V
IL
XV
IL
D
IN
Active
READ V
IL
V
IL
V
IH
D
OUT
Active
READ V
IL
V
IH
V
IH
High-Z Active
Deselect V
SO
to V
PFD
(min)
(1)
1. See Table 14 on page 30 for details.
X X X High-Z CMOS standby
Deselect V
SO
(1)
X X X High-Z Battery backup
AI02333
G
E
G
CON
tAOEL
ADDRESS
00000h - 7FFEFh 7FFF0h - 7FFFFh 00000h - 7FFEFh7FFF0h - 7FFFFh
tAOEH
tOERL
tRO
External SRAM
RTC
External SRAM
RTC
Operation M48T201Y, M48T201V
12/37
Figure 5. Read cycle timing: RTC and external RAM control signals
AI02334
G
CON
W
DQ0-DQ7
G
E
CON
DATA OUT
VALID
ADDRESS
tAVAV
E
tELQV
tAVAV tAVAV
READ READ WRITE
DATA IN
VALID
DATA OUT
VALID
tAVQV tWHAXtAVWL
tELQX
tGLQV
tEPD
tRO
tGHQZ
tWLWH
tAXQXtGLQX

M48T201V-85MH1F

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
Supervisory Circuits SRAM TK Controller
Lifecycle:
New from this manufacturer.
Delivery:
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