DC and AC parameters M48T201Y, M48T201V
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5 DC and AC parameters
This section summarizes the operating and measurement conditions, as well as the DC and
AC characteristics of the device. The parameters in the following DC and AC characteristic
tables are derived from tests performed under the measurement conditions listed in
Table 11: DC and AC measurement conditions. Designers should check that the operating
conditions in their projects match the measurement conditions when using the quoted
parameters.
Table 11. DC and AC measurement conditions
Note: Output High Z is defined as the point where data is no longer driven.
Figure 13. AC testing load circuit
Note: Excluding open-drain output pin; 50 pF for M48T201V.
Table 12. Capacitance
Parameter M48T201Y M48T201V Unit
V
CC
supply voltage 4.5 to 5.5 3.0 to 3.6 V
Ambient operating temperature 0 to 70 0 to 70 °C
Load capacitance (C
L
) 100 50 pF
Input rise and fall times 5 5ns
Input pulse voltages 0 to 3 0 to 3 V
Input and output timing ref. voltages 1.5 1.5 V
AI04764
C
L
= 100pF
C
L
includes JIG capacitance
645Ω
DEVICE
UNDER
TEST
1.75V
Symbol Parameter
(1)(2)
1. Effective capacitance measured with power supply at 5 V; sampled only, not 100% tested.
2. At 25°C; f = 1 MHz.
Min Max Unit
C
IN
Input capacitance 10 pF
C
OUT
(3)
3. Outputs deselected.
Input/output capacitance 10 pF
M48T201Y, M48T201V DC and AC parameters
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Table 13. DC characteristics
Sym Parameter Test condition
(1)
1. Valid for ambient operating temperature: T
A
= 0 to 70°C; V
CC
= 4.5 to 5.5 V or 3.0 to 3.6 V (except where noted).
M48T201Y M48T201V
Unit–70 –85
Min Typ Max Min Typ Max
I
LI
(2)
2. RSTIN1 and RSTIN2 internally pulled-up to V
CC
through 100 KΩ resistor. WDI internally pulled-down to V
SS
through
100 KΩ resistor.
Input leakage current 0V V
IN
V
CC
±1 ±1 µA
I
LO
(3)
3. Outputs deselected.
Output leakage
current
0V V
OUT
V
CC
±1 ±1 µA
I
CC
Supply current Outputs open 8 15 4 10 mA
I
CC1
Supply current
(standby) TTL
E
= V
IH
53mA
I
CC2
Supply current
(standby) CMOS
E
= V
CC
–0.2 3 2 mA
I
BAT
Battery current OSC
ON
V
CC
= 0 V
575 800 575 800 nA
Battery current OSC
OFF
100 100 nA
V
IL
Input low voltage –0.3 0.8 –0.3 0.8 V
V
IH
Input high voltage 2.2 V
CC
+ 0.3 2.0 V
CC
+ 0.3 V
V
OL
Output low voltage I
OL
= 2.1 mA 0.4 0.4 V
Output low voltage
(open drain)
(4)
4. For IRQ/FT & RST pins (open drain).
I
OL
= 10 mA 0.4 0.4 V
V
OH
Output high voltage I
OH
= –1.0 mA 2.4 2.4 V
V
OHB
(5)
5. Conditioned outputs (E
CON
- G
CON
) can only sustain CMOS leakage currents in the battery backup mode. Higher leakage
currents will reduce battery life.
V
OH
battery backup I
OUT2
= –1.0 µA 2.0 3.6 2.0 3.6 V
I
OUT1
(6)
6. External SRAM must match TIMEKEEPER
®
supervisor chip V
CC
specification.
V
OUT
current (active) V
OUT1
> V
CC
–0.3 100 70 mA
I
OUT2
V
OUT
current (battery
backup)
V
OUT2
> V
BAT
–0.3 100 100 µA
V
PFD
Power-fail deselect
voltage
4.1 4.35 4.5 2.7 2.9 3.0 V
V
SO
Battery backup
switchover voltage
3.0
V
PFD
100 mV
V
V
BAT
Battery voltage 3.0 3.0 V
DC and AC parameters M48T201Y, M48T201V
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Figure 14. Power down/up mode AC waveforms
Table 14. Power down/up mode AC characteristic
Symbol Parameter
(1)
1. Valid for ambient operating temperature: T
A
= 0 to 70°C; V
CC
= 4.5 to 5.5 V or 3.0 to 3.6 V (except where noted).
Min Max Unit
t
F
(2)
2. V
PFD
(max) to V
PFD
(min) fall time of less than t
F
may result in deselection/write protection not occurring until 200 µs after
V
CC
passes V
PFD
(min).
V
PFD
(max) to V
PFD
(min) V
CC
fall time 300 µs
t
FB
(3)
3. V
PFD
(min) to V
SS
fall time of less than t
FB
may cause corruption of RAM data.
V
PFD
(min) to V
SS
V
CC
fall time
M48T201Y 10 µs
M48T201V 150 µs
t
R
V
PFD
(min) to V
PFD
(max) V
CC
rise time 10 µs
t
REC
V
PFD
(max) to RST high 40 200 ms
t
RB
V
SS
to V
PFD
(min) V
CC
rise time 5 µs
AI03519
V
CC
INPUTS
RST
OUTPUTS
DON'T CARE
HIGH-Z
tF
tFB
tR
tRECtRB
VALID VALID
V
PFD
(max)
V
PFD
(min)
V
SO
VALID VALID

M48T201V-85MH1F

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
Supervisory Circuits SRAM TK Controller
Lifecycle:
New from this manufacturer.
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