Table 6: I
DD
Maximum Limits – Die Rev H
Speed Bin
DDR3L-1066 DDR3L-1333 DDR3L-1600 UnitI
DD
Width
I
DD0
x4, 8 65 70 75 mA
I
DD1
x4, 8 85 90 95 mA
I
DD2P0
(Slow) x4, 8 12 12 12 mA
I
DD2P1
(Fast) x4, 8 27 32 37 mA
I
DD2Q
x4, 8 32 37 42 mA
I
DD2N
x4, 8 34 38 43 mA
I
DD2NT
x4, 8 42 47 52 mA
I
DD3P
x4, 8 37 42 47 mA
I
DD3N
x4, 8 42 47 52 mA
I
DD4R
x4 110 125 140 mA
x8 125 140 155 mA
I
DD4W
x4 110 125 140 mA
x8 125 140 155 mA
I
DD5B
x4, 8 180 185 190 mA
I
DD6
x4, 8 12 12 12 mA
I
DD6ET
x4, 8 15 15 15 mA
I
DD7
x4, 8 225 240 255 mA
I
DD8
x4, 8 I
DD2P0
+ 2mA I
DD2P0
+ 2mA I
DD2P0
+ 2mA mA
2Gb: x4, x8, x16 DDR3L SDRAM Addendum
Electrical Characteristics – I
DD
Specifications
PDF: 09005aef83ed2952
2Gb_1_35V_DDR3L.pdf - Rev. E 1/11 EN
13
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2010 Micron Technology, Inc. All rights reserved.
Table 7: I
DD
Maximum Limits – Die Rev M
Speed Bin
DDR3L-1066 DDR3L-1333 DDR3L-1600 UnitI
DD
Width
I
DD0
x4, 8 50 55 60 mA
I
DD1
x4, 8 65 70 75 mA
I
DD2P0
(Slow) x4, 8 12 12 12 mA
I
DD2P1
(Fast) x4, 8 23 28 33 mA
I
DD2Q
x4, 8 23 28 33 mA
I
DD2N
x4, 8 25 30 35 mA
I
DD2NT
x4, 8 30 35 40 mA
I
DD3P
x4, 8 37 42 47 mA
I
DD3N
x4, 8 42 47 52 mA
I
DD4R
x4 95 110 125 mA
x8 110 125 140 mA
I
DD4W
x4 85 100 115 mA
x8 95 110 125 mA
I
DD5B
x4, 8 180 185 190 mA
I
DD6
x4, 8 12 12 12 mA
I
DD6ET
x4, 8 15 15 15 mA
I
DD7
x4, 8 190 205 220 mA
I
DD8
x4, 8 I
DD2P0
+ 2mA I
DD2P0
+ 2mA I
DD2P0
+ 2mA mA
2Gb: x4, x8, x16 DDR3L SDRAM Addendum
Electrical Characteristics – I
DD
Specifications
PDF: 09005aef83ed2952
2Gb_1_35V_DDR3L.pdf - Rev. E 1/11 EN
14
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2010 Micron Technology, Inc. All rights reserved.
Electrical Specifications
Table 8: Input/Output Capacitance
Gray-shaded cells have the same values as those in the 1.5V DDR3 data sheet
Capacitance Parame-
ters Symbol
DDR3L-800 DDR3L-1066 DDR3L-1333 DDR3L-1600
Unit
sMin Max Min Max Min Max Min Max
Single-end I/O: DQ, DM C
IO
1.5 2.5 1.5 2.5 1.5 2.3 1.5 2.3 pF
Differential I/O: DQS,
DQS#, TDQS, TDQS#
C
IO
1.5 2.5 1.5 2.5 1.5 2.3 1.5 2.3 pF
Inputs (CTRL,
CMD,ADDR)
C
I
0.75 1.3 0.75 1.3 0.75 1.3 0.75 1.3 pF
Table 9: DC Electrical Characteristics and Operating Conditions – 1.35V Operation
All voltages are referenced to V
SS
Parameter/Condition Symbol Min Nom Max Units Notes
Supply voltage V
DD
1.283 1.35 1.45 V 1, 2, 3, 4
I/O supply voltage V
DDQ
1.283 1.35 1.45 V 1, 2, 3, 4
Notes:
1. Maximum DC value may not be greater than 1.425V. The DC value is the linear average
of V
DD
/V
DDQ
(t) over a very long period of time (e.g., 1 sec).
2. If the maximum limit is exceeded, input levels shall be governed by DDR3 specifications.
3. Under these supply voltages, the device operates to this DDR3L specification.
4. Once initialized for DDR3L operation, DDR3 operation may only be used if the device is
in reset while V
DD
and V
DDQ
are changed for DDR3 operation (see Figure 6 (page 23)).
Table 10: DC Electrical Characteristics and Operating Conditions – 1.5V Operation
All voltages are referenced to V
SS
Parameter/Condition Symbol Min Nom Max Units Notes
Supply voltage V
DD
1.425 1.5 1.575 V 1, 2, 3
I/O supply voltage V
DDQ
1.425 1.5 1.575 V 1, 2, 3
Notes:
1. If the minimum limit is exceeded, input levels shall be governed by DDR3L specifications.
2. Under 1.5V operation, this DDR3L device operates in accordance with the DDR3 specifica-
tions under the same speed timings as defined for this device.
3. Once initialized for DDR3 operation, DDR3L operation may only be used if the device is
in reset while V
DD
and V
DDQ
are changed for DDR3L operation (see Figure 6 (page 23)).
Table 11: Input Switching Conditions – Command and Address
Parameter/Condition Symbol DDR3L-800/1066 DDR3L-1333/1600 Units
Input high AC voltage: Logic 1 V
IH(AC160)min
160 160 mV
Input high AC voltage: Logic 1 V
IH(AC135)min
135 135 mV
Input high DC voltage: Logic 1 V
IH(DC90)min
90 90 mV
Input low AC voltage: Logic 0 V
IL(AC160)min
–160 –160 mV
Input low AC voltage: Logic 0 V
IL(AC135)min
–135 –135 mV
2Gb: x4, x8, x16 DDR3L SDRAM Addendum
Electrical Specifications
PDF: 09005aef83ed2952
2Gb_1_35V_DDR3L.pdf - Rev. E 1/11 EN
15
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2010 Micron Technology, Inc. All rights reserved.

MT41K256M8HX-187E:D

Mfr. #:
Manufacturer:
Micron
Description:
IC DRAM 2G PARALLEL 78FBGA
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