Table 11: Input Switching Conditions – Command and Address (Continued)
Parameter/Condition Symbol DDR3L-800/1066 DDR3L-1333/1600 Units
Input low DC voltage: Logic 0 V
IL(DC90)min
–90 –90 mV
Table 12: Input Switching Conditions – DQ and DM
Parameter/Condition Symbol DDR3L-800/1066 DDR3L-1333/1600 Units
Input high AC voltage: Logic 1 V
IH(AC160)min
160
mV
Input high AC voltage: Logic 1 V
IH(AC135)min
135 135 mV
Input high DC voltage: Logic 1 V
IH(DC90)min
90 90 mV
Input low AC voltage: Logic 0 V
IL(AC160)min
–160
mV
Input low AC voltage: Logic 0 V
IL(AC135)min
–135 –135 mV
Input low DC voltage: Logic 0 V
IL(DC90)min
–90 –90 mV
Table 13: Differential Input Operating Conditions (CK, CK# and DQS, DQS#)
Parameter/Condition Symbol Min Max Units
Differential input logic high – slew V
IH,diff(AC)slew
180 N/A mV
Differential input logic low – slew V
IL,diff(AC)slew
N/A –180 mV
Differential input logic high V
IH,diff(AC)
2 × (V
IH(AC)
- V
REF
) V
DD
/V
DDQ
mV
Differential input logic low V
IL,diff(AC)
V
SS
/V
SSQ
2 × (V
REF
- V
IL(AC)
) mV
Single-ended high level for strobes V
SEH
V
DDQ
/2 + 160 V
DDQ
mV
Single-ended high level for CK, CK# V
DD
/2 + 160 V
DD
mV
Single-ended low level for strobes V
SEL
V
SSQ
V
DDQ
/2 - 160 mV
Single-ended low level for CK, CK# V
SS
V
DD
/2 - 160 mV
Table 14: Required Time
t
DVAC for CK/CK#, DQS/DQS# Differential for AC Ringback
Slew Rate (V/ns)
t
DVAC at 320mV (ps)
t
DVAC at 270mV (ps)
>4.0 70 209
4.0 53 198
3.0 47 194
2.0 35 186
1.8 31 184
1.6 26 181
1.4 20 177
1.2 12 171
1.0 0 164
<1.0 0 164
2Gb: x4, x8, x16 DDR3L SDRAM Addendum
Electrical Specifications
PDF: 09005aef83ed2952
2Gb_1_35V_DDR3L.pdf - Rev. E 1/11 EN
16
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2010 Micron Technology, Inc. All rights reserved.
Table 15: R
TT
Effective Impedance
Gray-shaded cells have the same values as those in the 1.5V DDR3 data sheet
MR1
[9, 6, 2] R
TT
Resistor V
OUT
Min Nom Max Units
0, 1, 0
120Ω
R
TT,120PD240
0.2 × V
DDQ
0.6 1.0 1.15 R
ZQ
/1
0.5 × V
DDQ
0.9 1.0 1.15 R
ZQ
/1
0.8 × V
DDQ
0.9 1.0 1.45 R
ZQ
/1
R
TT,120PU240
0.2 × V
DDQ
0.9 1.0 1.45 R
ZQ
/1
0.5 × V
DDQ
0.9 1.0 1.15 R
ZQ
/1
0.8 × V
DDQ
0.6 1.0 1.15 R
ZQ
/1
120Ω
V
IL(AC)
to V
IH(AC)
0.9 1.0 1.65 R
ZQ
/2
0, 0, 1
60Ω
R
TT,60PD120
0.2 × V
DDQ
0.6 1.0 1.15 R
ZQ
/2
0.5 × V
DDQ
0.9 1.0 1.15 R
ZQ
/2
0.8 × V
DDQ
0.9 1.0 1.45 R
ZQ
/2
R
TT,60PU120
0.2 × V
DDQ
0.9 1.0 1.45 R
ZQ
/2
0.5 × V
DDQ
0.9 1.0 1.15 R
ZQ
/2
0.8 × V
DDQ
0.6 1.0 1.15 R
ZQ
/2
60Ω
V
IL(AC)
to V
IH(AC)
0.9 1.0 1.65 R
ZQ
/4
0, 1, 1
40Ω
R
TT,40PD80
0.2 × V
DDQ
0.6 1.0 1.15 R
ZQ
/3
0.5 × V
DDQ
0.9 1.0 1.15 R
ZQ
/3
0.8 × V
DDQ
0.9 1.0 1.45 R
ZQ
/3
R
TT,40PU80
0.2 × V
DDQ
0.9 1.0 1.45 R
ZQ
/3
0.5 × V
DDQ
0.9 1.0 1.15 R
ZQ
/3
0.8 × V
DDQ
0.6 1.0 1.15 R
ZQ
/3
40Ω
V
IL(AC)
to V
IH(AC)
0.9 1.0 1.65 R
ZQ
/6
1, 0, 1
30Ω
R
TT,30PD60
0.2 × V
DDQ
0.6 1.0 1.15 R
ZQ
/4
0.5 × V
DDQ
0.9 1.0 1.15 R
ZQ
/4
0.8 × V
DDQ
0.9 1.0 1.45 R
ZQ
/4
R
TT,30PU60
0.2 × V
DDQ
0.9 1.0 1.45 R
ZQ
/4
0.5 × V
DDQ
0.9 1.0 1.15 R
ZQ
/4
0.8 × V
DDQ
0.6 1.0 1.15 R
ZQ
/4
30Ω
V
IL(AC)
to V
IH(AC)
0.9 1.0 1.65 R
ZQ
/8
1, 0, 0
20Ω
R
TT,20PD40
0.2 × V
DDQ
0.6 1.0 1.15 R
ZQ
/6
0.5 × V
DDQ
0.9 1.0 1.15 R
ZQ
/6
0.8 × V
DDQ
0.9 1.0 1.45 R
ZQ
/6
R
TT,20PU40
0.2 × V
DDQ
0.9 1.0 1.45 R
ZQ
/6
0.5 × V
DDQ
0.9 1.0 1.15 R
ZQ
/6
0.8 × V
DDQ
0.6 1.0 1.15 R
ZQ
/6
20Ω
V
IL(AC)
to V
IH(AC)
0.9 1.0 1.65 R
ZQ
/12
2Gb: x4, x8, x16 DDR3L SDRAM Addendum
Electrical Specifications
PDF: 09005aef83ed2952
2Gb_1_35V_DDR3L.pdf - Rev. E 1/11 EN
17
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2010 Micron Technology, Inc. All rights reserved.
Table 16: Reference Settings for ODT Timing Measurements
Gray-shaded cells have the same values as those in the 1.5V DDR3 data sheet
Measured
Parameter R
TT,nom
Setting R
TT(WR)
Setting V
SW1
V
SW2
t
AON
R
ZQ
/4 (60Ω)
N/A 50mV 100mv
R
ZQ
/12 (20Ω)
N/A 100mV 200mV
t
AOF
R
ZQ
/4 (60Ω)
N/A 50mV 100mv
R
ZQ
/12 (20Ω)
N/A 100mV 200mV
t
AONPD
R
ZQ
/4 (60Ω)
N/A 50mV 100mv
R
ZQ
/12 (20Ω)
N/A 100mV 200mV
t
AOFPD
R
ZQ
/4 (60Ω)
N/A 50mV 100mv
R
ZQ
/12 (20Ω)
N/A 100mV 200mV
t
ADC
R
ZQ
/12 (20Ω) R
ZQ
/2 (20Ω)
200mV 250mV
Table 17: 34Ω Driver Impedance Characteristics
Gray-shaded cells have the same values as those in the 1.5V DDR3 data sheet
MR1
[5, 1] R
ON
Resistor V
OUT
Min Nom Max
1
Units
0, 1
34.3Ω
R
ON,34PD
0.2 × V
DDQ
0.6 1.0 1.15 R
ZQ
/7
0.5 × V
DDQ
0.9 1.0 1.15 R
ZQ
/7
0.8 × V
DDQ
0.9 1.0 1.45 R
ZQ
/7
R
ON,34PU
0.2 × V
DDQ
0.9 1.0 1.45 R
ZQ
/7
0.5 × V
DDQ
0.9 1.0 1.15 R
ZQ
/7
0.8 × V
DDQ
0.6 1.0 1.15 R
ZQ
/7
Pull-up/pull-down mismatch (MM
PUPD
) V
IL(AC)
to V
IH(AC)
–10 N/A 10 %
Note:
1. A larger maximum limit will result in slightly lower minimum currents.
Table 18: 40Ω Driver Impedance Characteristics
Gray-shaded cells have the same values as those in the 1.5V DDR3 data sheet
MR1
[5, 1] R
ON
Resistor V
OUT
Min Nom Max
1
Units
0, 0
40Ω
R
ON,40PD
0.2 × V
DDQ
0.6 1.0 1.15 R
ZQ
/6
0.5 × V
DDQ
0.9 1.0 1.15 R
ZQ
/6
0.8 × V
DDQ
0.9 1.0 1.45 R
ZQ
/6
R
ON,40PU
0.2 × V
DDQ
0.9 1.0 1.45 R
ZQ
/6
0.5 × V
DDQ
0.9 1.0 1.15 R
ZQ
/6
0.8 × V
DDQ
0.6 1.0 1.15 R
ZQ
/6
Pull-up/pull-down mismatch (MM
PUPD
) V
IL(AC)
to V
IH(AC)
–10 N/A 10 %
Note:
1. A larger maximum limit will result in slightly lower minimum currents.
2Gb: x4, x8, x16 DDR3L SDRAM Addendum
Electrical Specifications
PDF: 09005aef83ed2952
2Gb_1_35V_DDR3L.pdf - Rev. E 1/11 EN
18
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2010 Micron Technology, Inc. All rights reserved.

MT41K256M8HX-187E:D

Mfr. #:
Manufacturer:
Micron
Description:
IC DRAM 2G PARALLEL 78FBGA
Lifecycle:
New from this manufacturer.
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