Table 4: 96-Ball FBGA – x16 Ball Descriptions
Symbol Type Description
A[9:0], A10/AP,
A11, A12/BC#, A13
Input
Address inputs: Provide the row address for ACTIVATE commands, and the column
address and auto precharge bit (A10) for READ/WRITE commands, to select one location
out of the memory array in the respective bank. A10 sampled during a PRECHARGE com-
mand determines whether the PRECHARGE applies to one bank (A10 LOW, bank selected
by BA[2:0]) or all banks (A10 HIGH). The address inputs also provide the op-code during a
LOAD MODE command. Address inputs are referenced to V
REFCA
. A12/BC#: When enabled
in the mode register (MR), A12 is sampled during READ and WRITE commands to deter-
mine whether burst chop (on-the-fly) will be performed (HIGH = BL8 or no burst chop,
LOW = BC4 burst chop).
BA[2:0] Input
Bank address inputs: BA[2:0] define the bank to which an ACTIVATE, READ, WRITE, or
PRECHARGE command is being applied. BA[2:0] define which mode register (MR0, MR1,
MR2, or MR3) is loaded during the LOAD MODE command. BA[2:0] are referenced to
V
REFCA
.
CK, CK# Input
Clock: CK and CK# are differential clock inputs. All address and control input signals are
sampled on the crossing of the positive edge of CK and the negative edge of CK#. Out-
put data strobe (LDQS, LDQS#, UDQS, UDQS#) is referenced to the crossings of CK and CK#.
CKE Input
Clock enable: CKE enables (registered HIGH) and disables (registered LOW) internal cir-
cuitry and clocks on the DRAM. The specific circuitry that is enabled/disabled is depend-
ent upon the DDR3 SDRAM configuration and operating mode. Taking CKE LOW
provides PRECHARGE power-down and SELF REFRESH operations (all banks idle) or active
power-down (row active in any bank). CKE is synchronous for power-down entry and exit
and for self refresh entry. CKE is asynchronous for self refresh exit. Input buffers (exclud-
ing CK, CK#, CKE, RESET#, and ODT) are disabled during power-down. Input buffers
(excluding CKE and RESET#) are disabled during SELF REFRESH. CKE is referenced to
V
REFCA
.
CS# Input
Chip select: CS# enables (registered LOW) and disables (registered HIGH) the command
decoder. All commands are masked when CS# is registered HIGH. CS# provides for exter-
nal rank selection on systems with multiple ranks. CS# is considered part of the command
code. CS# is referenced to V
REFCA
.
LDM Input
Input data mask: LDM is a lower-byte, input mask signal for write data. Lower-byte in-
put data is masked when LDM is sampled HIGH along with the input data during a write
access. Although the LDM ball is input-only, the LDM loading is designed to match that
of the DQ and LDQS balls. LDM is referenced to V
REFDQ
.
ODT Input
On-die termination: ODT enables (registered HIGH) and disables (registered LOW) ter-
mination resistance internal to the DDR3 SDRAM. When enabled in normal operation,
ODT is only applied to each of the following balls: DQ[15:0], LDQS, LDQS#, UDQS,
UDQS#, LDM, and UDM for the x16. The ODT input is ignored if disabled via the LOAD
MODE command. ODT is referenced to V
REFCA
.
RAS#, CAS#, WE# Input
Command inputs: RAS#, CAS#, and WE# (along with CS#) define the command being
entered and are referenced to V
REFCA
.
RESET# Input
Reset: RESET# is an active LOW CMOS input referenced to V
SS
. The RESET# input
receiver is a CMOS input defined as a rail-to-rail signal with DC HIGH ≥ 0.8 × V
DDQ
and DC
LOW ≤ 0.2 × V
DDQ
. RESET# assertion and deassertion are asynchronous.
2Gb: x4, x8, x16 DDR3L SDRAM Addendum
Ball Assignments and Descriptions
PDF: 09005aef83ed2952
2Gb_1_35V_DDR3L.pdf - Rev. E 1/11 EN
7
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2010 Micron Technology, Inc. All rights reserved.
