LTC3867
26
3867f
INTV
CC
(LDO) and EXTV
CC
The LTC3867 features a true PMOS LDO that supplies
power to INTV
CC
from the V
IN
supply. INTV
CC
powers the
gate drivers and much of the LTC3867’s internal circuitry.
The LDO regulates the voltage at the INTV
CC
pin to 5.3V
when V
IN
is greater than 5.8V. EXTV
CC
connects to INTV
CC
through a P-channel MOSFET and can supply the needed
power when its voltage is higher than 4.7V. Either of these
can supply a peak current of 100mA and must be bypassed
to ground with a minimum of 4.7µF ceramic capacitor or
low ESR electrolytic capacitor. No matter what type of bulk
capacitor is used, an additional 0.1µF ceramic capacitor
placed directly adjacent to the INTV
CC
and PGND pins is
highly recommended. Good bypassing is needed to sup-
ply the high transient currents required by the MOSFET
gate drivers. High input voltage applications in which
large MOSFETs are being driven at high frequencies may
cause the maximum junction temperature rating for the
LTC3867 to be exceeded. The INTV
CC
current, which is
dominated by the gate charge current, may be supplied by
either the 5.3V LDO or EXTV
CC
. When the voltage on the
EXTV
CC
pin is less than 4.5V, the LDO is enabled. Power
dissipation for the IC in this case is highest and is equal
to V
IN
• I
INTVCC
. The gate charge current is dependent
on operating frequency as discussed in the Efficiency
Considerations section. The junction temperature can be
estimated by using the equations given in Note 2 of the
Electrical Characteristics tables. For example, the LTC3867
INTV
CC
current is limited to less than 30mA from a 38V
supply in the UF package and not using the EXTV
CC
supply
with a 70°C ambient temperature:
T
J
= 70°C + (30mA)(38V)(47°C/W) ≅ 125°C
To prevent the maximum junction temperature from being
exceeded, the input supply current must be checked while
operating in continuous conduction mode (MODE = SGND)
at maximum V
IN
. When the voltage applied to EXTV
CC
rises
above 4.7V, the INTV
CC
LDO is turned off and the EXTV
CC
is connected to the INTV
CC
. The EXTV
CC
remains on as
long as the voltage applied to EXTV
CC
remains above 4.5V.
Using the EXTV
CC
allows the MOSFET driver and control
power to be derived from an efficient switching regulator
output during normal operation. If more current is required
through the EXTV
CC
than is specified, an external Schottky
diode can be added between the EXTV
CC
and INTV
CC
pins.
Do not apply more than 6V to the EXTV
CC
pin and make
sure that EXTV
CC
< V
IN
.
Significant efficiency and thermal gains can be realized
by powering INTV
CC
from EXTV
CC
, since the V
IN
current
resulting from the driver and control currents will be scaled
by a factor of (duty cycle)/(switcher efficiency). Tying the
EXTV
CC
pin to a 5V supply reduces the junction temperature
in the previous example from 125°C to:
T
J
= 70°C + (30mA)(5V)(47°C/W) = 77°C
However, for low voltage outputs, additional circuitry is
required to derive INTV
CC
power from the output.
The following list summarizes the four possible connec-
tions for EXTV
CC
:
1. EXTV
CC
left open (or grounded). This will cause
INTV
CC
to be powered from the internal LDO resulting
in an efficiency penalty of up to 10% at high input
voltages.
2. EXTV
CC
connected directly to V
OUT
. This is the normal
connection for a 5V regulator and provides the highest
efficiency.
3. EXTV
CC
connected to an external supply. If a 5V external
supply is available, it may be used to power EXTV
CC
providing it is compatible with the MOSFET gate drive
requirements.
4. EXTV
CC
connected to an output-derived boost network.
For 3.3V and other low voltage regulators, efficiency
gains can still be realized by connecting EXTV
CC
to an
output-derived voltage that has been boosted to greater
than 4.7V.
For applications where the main input power is 5V, tie
the V
IN
and INTV
CC
pins together and tie the combined
pins to the 5V input with a 1Ω or 2.2Ω resistor as shown
in Figure 12 to minimize the voltage drop caused by the
gate charge current. This will override the INTV
CC
linear
regulator and will prevent INTV
CC
from dropping too low
due to the dropout voltage. Make sure the INTV
CC
voltage
is at or exceeds the R
DS(ON)
test voltage for the MOSFET
which is typically 4.5V for logic-level devices
APPLICATIONS INFORMATION