Data Sheet ADN2526
Rev. B | Page 3 of 16
SPECIFICATIONS
VCC = VCC
MIN
to VCC
MAX
, T
A
= −40°C to +85°C, 50 Ω differential load resistance, unless otherwise noted. Typical values are specified at
T
A
= 25°C, IMOD
1
= 40 mA, unless otherwise noted.
Table 1.
Parameter Min Typ Max Unit Test Conditions/Comments
Bias Current Range 10 100 mA
Bias Current While ALS Asserted 300 µA ALS = high
Compliance Voltage
2
0.6 VCC V IBIAS = 100 mA
0.6 VCC V IBIAS = 10 mA
MODULATION CURRENT (IMODP, IMODN)
Modulation Current Range 10 80 mA diff R
LOAD
= 5 Ω to 50 Ω differential
Modulation Current While ALS Asserted 0.5 mA diff ALS = high
Rise Time (20% to 80%)
3, 4
Fall Time (20% to 80%)
3, 4
24 32.5 ps
Random Jitter
3, 4
0.4 0.9 ps rms
Deterministic Jitter
3, 5
7.2 12 ps p-p Includes pulse width distortion
Pulse Width Distortion
3, 4
2 5 ps PWD = (|T
HIGH
– T
LOW
|)/2
Differential |S22| −10 dB 5 GHz < f < 10 GHz, Z
0
= 50 Ω differential
0
Compliance Voltage
2
VCC − 1.1 VCC + 1.1 V
DATA INPUTS (DATAP, DATAN)
Input Data Rate 11.3 Gbps NRZ
Differential Input Swing 0.15 1.6 V p-p diff Differential, ac-coupled
Differential |S11| −16.8 dB f < 10 GHz, Z
0
= 100 Ω differential
Input Termination Resistance 100 Ω Differential
BIAS CONTROL INPUT (BSET)
BSET Voltage to IBIAS Gain 90 mA/V
BSET Input Resistance 1000 Ω
MODULATION CONTROL INPUT (MSET)
MSET Voltage to IMOD Gain 50 78 100 mA/V See Figure 29
MSET Input Resistance 1000 Ω
BIAS MONITOR (IBMON)
IBMON to IBIAS Ratio 10 µA/mA
Accuracy of IBIAS to IBMON Ratio −5.0 +5.0 % 10 mA ≤ IBIAS < 20 mA, R
IBMON
= 1 kΩ
−4.0 +4.0 % 20 mA ≤ IBIAS < 40 mA, R
IBMON
= 1 kΩ
−2.5 +2.5 % 40 mA ≤ IBIAS < 70 mA, R
IBMON
= 1 kΩ
−2 +2 % 70 mA ≤ IBIAS < 100 mA, R
IBMON
= 1 kΩ
AUTOMATIC LASER SHUTDOWN (ALS)
V
IH
2.0 V
V
IL
0.8 V
I
IL
−30 +30 µA
I
IH
0 200 µA
ALS Assert Time 2 µs
Rising edge of ALS to falling edge of IBIAS and
IMOD below 10% of nominal, see Figure 2
ALS Negate Time 10 µs
Falling edge of ALS to rise of IBIAS and IMOD
above 90% of nominal, see Figure 2
