DC and AC parameters M25P10-A
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Table 15. DC characteristics (device grade 3)
(1)
1. Only for products with process technology code X.
Symbol Parameter
Test condition (in addition to
those in Table 10)
Min
(2)
2. Preliminary data.
Max
(2)
Unit
I
LI
Input Leakage current ± 2 µA
I
LO
Output Leakage current ± 2 µA
I
CC1
Standby current S = V
CC
, V
IN
= V
SS
or
V
CC
100 µA
I
CC2
Deep Power-down current S = V
CC
, V
IN
= V
SS
or
V
CC
50 µA
I
CC3
Operating current (READ)
C = 0.1V
CC
/ 0.9.V
CC
at 25 MHz,
Q = open
8mA
C = 0.1V
CC
/ 0.9.V
CC
at 20 MHz,
Q = open
4mA
I
CC4
Operating current (PP) S = V
CC
15 mA
I
CC5
Operating current (WRSR) S = V
CC
15 mA
I
CC6
Operating current (SE) S = V
CC
15 mA
I
CC7
Operating current (BE) S = V
CC
15 mA
V
IL
Input Low voltage –0.5 0.3V
CC
V
V
IH
Input High voltage 0.7V
CC
V
CC
+0.4 V
V
OL
Output Low voltage I
OL
= 1.6 mA 0.4 V
V
OH
Output High voltage I
OH
= –100 µAV
CC
–0.2 V
Table 16. Instruction times (device grade 6)
Test conditions specified in Table 10 and Table 12
Symbol Alt. Parameter Min Typ Max Unit
t
W
Write Status Register cycle time 5 15 ms
t
PP
(1)
1. When using the Page Program (PP) instruction to program consecutive bytes, optimized timings are
obtained with one sequence including all the bytes versus several sequences of only a few bytes. (1 ≤ n ≤
256).
Page Program cycle time (256 bytes) 1.4
5ms
Page Program cycle time (n bytes)
0.4+
n*1/256
(2)
2. t
PP
=2µs+8µs*[int(n-1)/2+1]+4µs*[int(n-1)/2]+2µs, in products with process technology code X and Y.
t
SE
Sector Erase cycle time 0.65 3 s
t
BE
Bulk Erase cycle time 1.7 6 s
