DC and AC parameters M25P10-A
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Table 18. AC characteristics (25 MHz operation, device grade 6 or 3)
Test conditions specified in Table 10 and Table 12
Symbol Alt. Parameter Min Typ Max Unit
f
C
f
C
Clock frequency for the following
instructions: FAST_READ, PP, SE, BE, DP,
RES, WREN, WRDI, RDSR, WRSR
D.C. 25 MHz
f
R
Clock frequency for READ instructions D.C. 20 MHz
t
CH
(1)
1. t
CH
+ t
CL
must be greater than or equal to 1/ f
C
.
t
CLH
Clock High time 18 ns
t
CL
(1)
t
CLL
Clock Low time 18 ns
t
CLCH
(2)
2. Value guaranteed by characterization, not 100% tested in production.
Clock Rise time
(3)
(peak to peak)
3. Expressed as a slew-rate.
0.1 V/ns
t
CHCL
(2)
Clock Fall time
(3)
(peak to peak) 0.1 V/ns
t
SLCH
t
CSS
S Active Setup time (relative to C) 10 ns
t
CHSL
S Not Active Hold time (relative to C) 10 ns
t
DVCH
t
DSU
Data In Setup time 5 ns
t
CHDX
t
DH
Data In Hold time 5 ns
t
CHSH
S Active Hold time (relative to C) 10 ns
t
SHCH
S Not Active Setup time (relative to C) 10 ns
t
SHSL
t
CSH
S Deselect time 100 ns
t
SHQZ
(2)
t
DIS
Output Disable time 15 ns
t
CLQV
t
V
Clock Low to Output Valid 15 ns
t
CLQX
t
HO
Output Hold time 0 ns
t
HLCH
HOLD Setup time (relative to C) 10 ns
t
CHHH
HOLD Hold time (relative to C) 10 ns
t
HHCH
HOLD Setup time (relative to C) 10 ns
t
CHHL
HOLD Hold time (relative to C) 10 ns
t
HHQX
(2)
t
LZ
HOLD to Output Low-Z 15 ns
t
HLQZ
(2)
t
HZ
HOLD to Output High-Z 20 ns
t
WHSL
(4)
4. Only applicable as a constraint for a WRSR instruction when SRWD is set to ‘1’.
Write Protect Setup time 20 ns
t
SHWL
(4)
Write Protect Hold time 100 ns
t
DP
(2)
S High to Deep Power-down mode 3 µs
t
RES1
(2)
S High to Standby mode without Read
Electronic Signature
3 or 30
(5)
5. It is 30 µs in devices produced with the ‘X’ and ‘Y’ process technology (grade 3 devices are only produced
using the ‘X’ process technology). Details of how to find the process letter on the device marking are given
in the application note AN1995.
µs
t
RES2
(2)
S High to Standby mode with Read
Electronic Signature
1.8 or 30
(5)
µs
