6.42
17
IDT71P74804 (1M x 18-Bit) 71P74604 (512K x 36-Bit)
Advance Information
18 Mb QDR II SRAM Burst of 4 Commercial Temperature Range
IDT71P74804 (1M x 18-Bit) 71P74604 (512K x 36-Bit)
18 Mb QDR II SRAM Burst of 4 Commercial Temperature Range
Parameter Symbol Min Ty p Max Unit Note
Output Power Supply V
DDQ
1.4 - 1.9 V
Power Supply Voltage V
DD
1.7 1.8 1.9 V
Input High Level V
IH
1.3 - V
DD
+0.3 V
Input Low Level V
IL
-0.3 - 0.5 V
TCK Input Leakage Current I
IL
-5 - +5 µA
TMS, TDI Input Leakage Current I
IL
-15 - +15 µA
TDO Output Leakage Current I
OL
-5 - +5 µA
Output High Voltage (IOH = -1mA) V
OH
V
DDQ
- 0.2 - V
DDQ
V
1
Output Low Voltage (IOL = 1mA) V
OL
V
SS
-0.2V
1
6111 tbl 19
Parameter Symbol Value Unit Note
Input High Level V
IH 1.8 V
Input Low Level V
IL 0V
Input Rise/Fall Time TR/TF 1.0/1.0 ns
Input and Output Timing Reference Level 0.9 V 1
6111 tbl 20
JTAG DC Operating Conditions
NOTE:
1. The output impedance of TDO is set to 50 ohms (nominal process) and does not vary with
the external resistor connected to ZQ.
JTAG AC Test Conditions
NOTE:
1. For SRAM outputs see AC test load on page 13.
JTAG Input Test Waveform
JTAG Output Test Waveform
JTAG AC Test Load
6111 drw 23
0.9 V
0.9 VTest points
1.8 V
0V
6111 drw 23a
0.9 V
0.9 VTest points
0.9 V
50Ω
TDO
Z
0
=50Ω
6111 drw 24
,
