6.42
7
IDT71P74804 (1M x 18-Bit) 71P74604 (512K x 36-Bit)
Advance Information
18 Mb QDR II SRAM Burst of 4 Commercial Temperature Range
IDT71P74804 (1M x 18-Bit) 71P74604 (512K x 36-Bit)
18 Mb QDR II SRAM Burst of 4 Commercial Temperature Range
Absolute Maximum Ratings
(1) (2)
Capacitance (TA = +25°C, f = 1.0MHz)
(1)
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
2. VDDQ must not exceed VDD during normal operation.
NOTE:
1. Tested at characterization and retested after any design or process
change that may affect these parameters.
Symbol Parameter Conditions Max. Unit
C
IN
Input Capacitance
V
DD
= 1.8V
V
DDQ
= 1.5V
5pF
C
CLK
Clock Input Capacitance 6 pF
C
O
Output Capacitance 7 pF
6111 tbl 06
Symbol Rating Value Unit
V
TE R M
Supply Voltage on V
DD
with
Respect to GND
–0.5 to +2.9 V
V
TE R M
Supply Voltage on V
DDQ
with
Respect to GND
–0.5 to V
DD
+0.3 V
V
TE R M
Voltage on Input terminals with
respect to GND
–0.5 to V
DD
+0.3 V
V
TE R M
Voltage on Output and I/O
terminals with respect to GND.
–0.5 to V
DDQ
+0.3 V
T
BIAS
Temperature Under Bias –55 to +125 °C
T
STG
Storage Temperature –65 to +150 °C
I
OUT
Continuous Current into Outputs + 20 mA
6111 tbl 05
Recommended DC Operating and
Temperture Conditions
Symbol Parameter Min. Typ. Max. Unit
V
DD
Power Supply
Voltage
1.7 1.8 1.9 V
V
DDQ
I/O Supply Voltage 1.4 1.5 1.9 V
V
SS
Ground 0 0 0 V
V
REF
Input Reference
Voltage
0.68 V
DDQ
/2 0.95 V
T
A
Ambient
Temperature
(1)
025+70
o
c
6111 tbl 04
NOTES:
1) All byte write (BWx) signals are sampled on
the rising edge of K and again on K. The data that is present on the
data bus in the designated byte will be latched into the input if
the corresponding BWxis held low. The rising edge of K
will sample the first and third bytes of the four word burst and
the rising edge of K will sample the second and fourth bytes
of the four word burst.
2) The availability of the BWx on designated devices is de
scribed in the pin description table.
3) The QDRII Burst of four SRAM has data forwarding. A read request
that is initiated on the cycle following a write request to the same
address will produce the newly written data in response to the read
request.
Signal
BW
0
BW
1
BW
2
BW
3
Write Byte 0 LXXX
Write Byte 1 X L X X
Write Byte 2 X X L X
Write Byte 3 X X X L
6111 tbl 09
Write Descriptions
(1,2)
NOTE:
1. During production testing, the case temperarure equals the ambient
temperature.
