DS28DG02: 2Kb SPI EEPROM with PIO, RTC, Reset, Battery Monitor, and Watchdog
28 of 34
Figure 20. Read Memory and PIO Timing (continued)
CSZ
SCK
SI
SO
Read Timing,
Mode (1,1)
High Impedance
7 6 5 4 3 2 1 0 7
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
8 Falling Edges for Each Data Byte
0 0 0 0 A8 0 1 1 7 6 5 4 3 2 1 0
Instruction 8-bit Address
See Note
Note: This edge ends the LS bit (0) of the previous byte and begins the MS bit (7) of the next byte.
Data Byte
1)
1)
The first byte delivered by the device is the SPI Status Byte. After that the memory data follows.
When reading the
RTC and Calendar registers, the data reported to the master is taken from a buffer. This buffer is
loaded when the least significant address bit is transmitted during a READ instruction. This buffer is not updated
between bytes or when the address pointer wraps around. If the starting target address specified after the
instruction code points to the PIO Read Access registers (address 126h or 127h) the address pointer toggles
between 126h or 127h after a data byte is transmitted. This allows fast PIO reads, e.g., to monitor several signals.
For a PIO-read timing diagram see the PIO Read/Write Access section.
If a read instruction requests data from nonexisting memory, the DS28DG02 initially transmits 00h bytes until the
address pointer eventually changes to 000h. Subsequently, the device transmits valid data and the read pointer
increments normally, wrapping around to 000h after having reached 135h.
PIO Read/Write Access
General Information
When the DS28DG02 powers up, the PIO direction, output state, output type, output mode, and read-inversion are
set automatically from power-on default values stored in EEPROM. The duration of this initialization phase is t
POIP
,
during which each PIO is temporarily set as input with the output driver tri-stated to prevent conflicts with circuitry
connected to the PIO pins. The output drivers of PIOs that are configured as input are tri-stated (high impedance).
The PIO output drivers of the DS28DG02 are designed to deliver high currents for driving LEDs or similar loads.
Switching multiple PIOs conducting high current simultaneously could errantly trigger the reset monitor circuit. To
prevent this from happening, it is necessary to set the OTM bit at address 125h, which activates the high-current
mode where the PIO channels switch sequentially. In high-current mode changes in direction or output type do not
take effect immediately; they are delayed until the next PIO write access when the associated bit transition is
evaluated. Since writing to PIOs is a write function, the WEN bit must be set before issuing the WRITE instruction.
Writing in Low-Current Mode
When writing to PIOs in low-current mode, as shown in Figure 21, any state change is triggered by the falling edge
of SCK after the last bit of the new PIO state is shifted into the DS28DG02. All addressed PIOs (8 with address
120h or 4 with address 121h) change their state approximately at the same time. After the output transition time t
OT
is expired, the state change is completed. If the WRITE instruction is issued with starting address 120h, the
DS28DG02 enters a loop in which incoming data is directed to both groups of PIOs alternating between PIO0:7
and PIO8:11. This way the fastest rate for a PIO to change its state is f
CLK
/ 16.
DS28DG02: 2Kb SPI EEPROM with PIO, RTC, Reset, Battery Monitor, and Watchdog
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Figure 21. PIO Write Access Timing, Low-Current Mode
This edge clocks in the last (LS)
bit of the new PIO data byte.
This edge starts the
transfer of the new data to
the PIO pins. See Note.
t
OT
SCK
PIOn
The t
OT
timing reference is 80%
or 20% of maximum current.
Note: In SPI Mode (1,1) there is no falling SCK edge for the last bit of the last byte sent to the device; in this case,
the transfer to the PIO is initiated with the rising edge of CSZ. This note also applies to the high-current mode.
Writing in High-Current Mode
When writing to PIOs in high-current mode, the state change is triggered by the falling edge of SCK after the last bit
of the new PIO state is shifted into the DS28DG02. The PIOs change their state sequentially, as shown in Figure
22, beginning with PIO0 or PIO8, respectively, depending on the address. A PIO that is changing its state is first tri-
stated for 2µs maximum. This 2µs delay also applies to PIOs configured as input and to PIOs configured as output
that do not change their state. The state transition of PIOs in high-current mode is slew-rate controlled to prevent
immediate full current-drive or release. Each pin’s slew-rate circuit is designed to ramp up to the full current drive or
release over the course of 1μs. The t
OT
value specified for high-current mode is valid when updating all 12 PIOs in
a single write access. In this case there is an extra 1µs maximum delay when transitioning from PIO7 to PIO8. In
high-current mode, the automatic alternation between groups of PIOs does not apply; another WREN and WRITE
sequence is necessary to update the PIO states again.
Figure 22. PIO Write Access Timing, High-Current Mode
This edge clocks in the last (LS)
bit of the new PIO data byte.
SCK
PIO0 (PIO8)
PIO1 (PIO9)
PIO2 (PIO10)
PIO3 (PIO11)
2µs
max.
1µs max.
Tri-stated
DS28DG02: 2Kb SPI EEPROM with PIO, RTC, Reset, Battery Monitor, and Watchdog
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Reading from PIO
When reading from PIOs, as shown in Figure 23, the sampling is triggered by the same edge that the master uses
to clock in (read) the last data (LS) bit of the preceding byte, which may be PIO data or SRAM data. To be correctly
assessed, the PIO state must not changed during the t
PS
and t
PH
interval. The SO state is valid t
V
after the falling
edge of SCL. When reading from address 126h, the PIO state appearing first on SO is that of PIO7. With every
falling edge on SCK the next PIO state appears on SO. On the rising SCK edge after the state of PIO0 is shifted
out to SO, the PIOs of address 127h are sampled. Reading from address 127 first results in four 0-bits followed by
the state of PIO11 to PIO8. If the READ instruction is issued with starting address 126h, the DS28DG02 enters a
loop in which both groups of PIOs are read alternating between PIO0:7 and PIO8:11. This way the fastest PIO
sampling rate is f
CLK
/ 16.
Figure 23. PIO Read-Access Timing
On this edge the master
reads the LS bit of the
previous PIO data byte.
This edge shifts the MS
bit of the just sampled
PIO state to SO.
t
PS
t
PH
Sampling
SCK
PIOn
SPI Communication—Legend
SYMBOL DESCRIPTION SYMBOL DESCRIPTION
SEL Falling Edge on CSZ WRITEL Write Instruction with A8 = 0
DSEL Rising Edge on CSZ WRITEH Write Instruction with A8 = 1
WREN Write Enable Instruction READL Read Instruction with A8 = 0
WRDI Write Disable Instruction READH Read Instruction with A8 = 1
WRSR Write Status Register Instruction <byte> Transfer of 1 Byte
RFSH Refresh Instruction

DS28DG02E-3C+

Mfr. #:
Manufacturer:
Maxim Integrated
Description:
EEPROM 2Kb SPI EEPROM w/PIO RTC/Rst/Bat Mtr/Wtdg
Lifecycle:
New from this manufacturer.
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