LTC3774
19
3774fc
For more information www.linear.com/LTC3774
After determining the components for the temperature
compensation network, check the results by plotting I
MAX
versus inductor temperature using the following equations:
I
MAX
=
V
SENSEMAX(ADJ)
V
SENSE
/ 2
DCR(MAX) at 25°C 1+ T
L(MAX)
25°C
( )
0.4 /100
( )
where:
V
SENSEMAX(ADJ)
= V
SENSE(MAX)
2.0V
V
ITEMP
2.8
1.5
V
ITEMP
= 30µA R
S
+R
P
||R
NTC
( )
Use typical values for V
SENSE(MAX)
.
The resulting current limit should be greater than or equal
to I
MAX
for inductor temperatures between 25°C and 100°C.
These are typical values for the NTC compensation network:
NTC R
O
= 100k, B-constant = 3000 to 4000
R
S
≈ 20k
R
P
≈ 50k
Generating the I
MAX
versus inductor temperature curve plot
first using the above values as a starting point and then
adjusting the R
S
and R
P
values as necessary is another
APPLICATIONS INFORMATION
approach. Figure 6 shows a typical curve of I
MAX
versus
inductor temperature.
The same thermistor network can be used to correct for
temperatures less than 25°C. But make sure V
ITEMP
is
greater than 0.6V for duty cycles of 25% or more, oth-
erwise temperature correction may not occur at elevated
ambients
.
For the most accurate temperature detection,
place the thermistors next to the inductor as shown in
Figure 7. Take care to keep the ITEMP pin away from the
switch nodes.
INDUCTOR TEMPERATURE (°C)
10
RESISTANCE (kΩ)
100
1000
10000
–40 20 40 60 10080 120
1
–20 0
3774 F05
THERMISTOR RESISTANCE
R
O
= 100k
T
O
= 25°C
B = 4334 FOR 25°C/100°C
R
ITEMP
R
S
= 20k
R
P
= 43.2k
100k NTC
Figure 5. Resistance Versus Temperature for the ITEMP Pin
Network and the 100k NTC
INDUCTOR TEMPERATURE (°C)
–40
I
MAX
(A)
15
20
25
20 60 120
3774 F06
10
5
0
–20 0
40
80 100
CORRECTED
I
MAX
NOMINAL
I
MAX
UNCORRECTED
I
MAX
R
S
= 20k
R
P
= 43.2k
NTC THERMISTOR:
R
O
= 100k
T
O
= 25°C
B = 4334
V
OUT
R
NTC
L1
SW1
3774 F07
Figure 6. Worst-Case I
MAX
Versus Inductor Temperature Curve
with and without NTC Temperature Compensation
Figure 7. Thermistor Location. Place Thermistor Next to
Inductor for Accurate Sensing of the Inductor Temperature,
But Keep the ITEMP Pin Away from the Switch Nodes and Gate
Drive Traces
LTC3774
20
3774fc
For more information www.linear.com/LTC3774
APPLICATIONS INFORMATION
Pre-Biased Output Start-Up
There may be situations that require the power supply to
start up with a pre-bias on the output capacitors. In this
case, it is desirable to start up without discharging that
output pre-bias. The LTC3774 can safely power up into a
pre-biased output without discharging it.
The LTC3774 accomplishes this by disabling both the top
and bottom MOSFETs until the TK/SS pin voltage and the
internal soft-start voltage are above the V
OSNS
+
pin volt-
age. When V
OSNS
+
is higher than TK/SS or the internal
soft-start voltage, the error amp output is railed low. The
control loop would like to turn the bottom MOSFET on,
which would discharge the output. Disabling both top and
bottom MOSFETs prevents the pre-biased output voltage
from being discharged. When TK/SS and the internal
soft-start both cross 500mV or V
OSNS
+
, whichever is
lower, both top and bottom MOSFETs are enabled. If the
pre-bias is higher than the OV threshold, the bottom gate
is turned on immediately to pull the output back into the
regulation window.
Overcurrent Fault Recovery
When the output of the power supply is loaded beyond its
preset current limit, the regulated output voltage will col
-
lapse depending on the load. The output may be shorted
to ground through a ver
y low impedance path or it may
be a resistive short
, in which case the output will collapse
partially, until the load current equals the preset current
limit. The controller will continue to source current into
the short. The amount of current sourced depends on
the ILIM pin setting and the V
OSNS
+
voltage as shown in
the Current Foldback graph in the Typical Performance
Characteristics section.
Upon removal of the short, the output soft starts using
the internal soft-start, thus reducing output overshoot. In
the absence of this feature, the output capacitors would
have been charged at current limit, and in applications
with minimal output capacitance this may have resulted
in output overshoot. Current limit foldback is not disabled
during an overcurrent recovery. The load must step below
the folded back current limit threshold in order to restart
from a hard short.
Phase Shedding/n+1 Redundancy (HIZB Pin)
Unlike the RUN pins, the HIZB pins cause the PWM to enter
its high impedance state while not pulling down on ITH or
TK/SS. This allows two possibilities: First, one can shed a
phase based on load requirements via the HIZB pin. This im
-
proves low current efficiency in a single output multiphase
case by reducing switching losses. Second, for applications
that require n+1 redundancy, it is now easy to disconnect
a channel with damaged MOSFETs or drivers. When com
-
bined with a Hot Swap controller, such as the LTC4226,
the HIZB pin could be connected to the gate of the Hot
Swap switch.
When a damaged MOSFET triggers the Hot
Swap controller, it also disables the corresponding chan
-
nel’s power stage, disconnecting it. Since ITH and TK/SS
are unaffected, it does not affect the rest of the system.
The propagation delay from HIZB falling to high impedance
on P
WM is <200ns.
Inductor Value Calculation
Given the desired input and output voltages, the inductor
value and operating frequency, f
OSC
, directly determine
the inductor’s peak-to-peak ripple current:
I
RIPPLE
=
V
OUT
V
IN
V
IN
V
OUT
f
OSC
L
Lower ripple current reduces core losses in the inductor,
ESR losses in the output capacitors, and output voltage
ripple. Thus, highest efficiency operation is obtained at
low frequency with a small ripple current. Achieving this,
however, requires a large inductor.
A reasonable starting point is to choose a ripple current
that is about 40% of I
OUT(MAX)
. Note that the largest ripple
current occurs at the highest input voltage. To guarantee
that ripple current does not exceed a specified maximum,
the inductor should be chosen according to:
L
V
IN
V
OUT
f
OSC
I
RIPPLE
V
OUT
V
IN
Inductor Core Selection
Once the inductance value is determined, the type of in-
ductor must be selected. Core loss is independent of core
LTC3774
21
3774fc
For more information www.linear.com/LTC3774
size for a fixed inductor value, but it is very dependent on
inductance selected. As inductance increases, core losses
go down. Unfortunately, increased inductance requires
more turns of wire and therefore copper losses will increase.
Ferrite designs have very low core loss and are preferred
at high switching frequencies, so design goals can con
-
centrate on copper loss and preventing saturation. Ferrite
core material saturates “hard,” which means that induc-
tance collapses abruptly when the peak design current is
exceeded
.
This results in an abrupt increase in inductor
ripple current and consequent output voltage ripple. Do
not allow the core to saturate!
PWM and PWMEN Pins
The PWM pins are three-state compatible outputs, de-
signed to drive MOSFET drivers, DrMOSs, etc which do
not represent a heavy capacitive load. An external resistor
divider may be used to set the voltage to mid-rail while in
the high impedance state.
The PWMEN outputs have an open-drain pull-up to INTV
CC
and require an appropriate external pull-down resistor.
This pin is intended to drive the enable pins of the MOS
-
FET drivers that do not have three-state compatible PWM
inputs. PWMEN is low only when PWM is high impedance,
and high at any other PWM state.
When selecting a DrMOS or gate driver to use with the
LTC3774, care must be taken to ensure that the absolute
maximum voltage rating for the DrMOS or gate driver’s
PWM input is not exceeded. The LTC3774’s PWM output
driver is biased from INTV
CC
, which is typically 5.5V,
while the DrMOS or gate driver is generally biased from
a 5V supply. If the DrMOS or gate driver has a maximum
PWM rating less than 5.5V then tie the V
IN
and INTV
CC
pins of the LTC3774 together and tie the combined pins
to the 5V supply with a or 2.2 Ω resistor. Please a
4.4µF capacitor from the combined V
IN
and INTV
CC
pins
to ground. Refer to Figure 11 for an example. Contact
factory applications support for assistance.
APPLICATIONS INFORMATION
Power MOSFET and Schottky Diode
(Optional) Selection
At least two external power MOSFETs need to be selected
:
One N-channel MOSFET for the top (main) switch and one
or more N-channel MOSFET(s) for the bottom (synchro
-
nous) switch. The number, type and on-resistance of all
MOSFET
s selected take into account the voltage step-down
ratio as well as the actual position (main or synchronous)
in which the MOSFET will be used. A much smaller and
much lower input capacitance MOSFET should be used
for the top MOSFET in applications that have an output
voltage that is less than one-third of the input voltage. In
applications where V
IN
>> V
OUT
, the top MOSFETs on-
resistance is normally less important for overall efficiency
than its input capacitance at operating frequencies above
300kHz. MOSFET manufacturers have designed special
purpose devices that provide reasonably low on-resistance
with significantly reduced input capacitance for the main
switch application in switching regulators.
The peak-to-peak MOSFET gate drive levels are set by the
internal regulator voltage, V
INTVCC
, requiring the use of
logic-level threshold MOSFETs in most applications. Pay
close attention to the BV
DSS
specification for the MOSFETs
as well; many of the logic-level MOSFETs are limited to
30V or less. Selection criteria for the power MOSFETs
include the on-resistance, R
DS(ON)
, input capacitance,
input voltage and maximum output current. MOSFET input
capacitance is a combination of several components but
can be taken from the typical gate charge curve included
on most data sheets (Figure 8). The curve is generated by
forcing a constant input current into the gate of a common
source, current source loaded stage and then plotting the
gate voltage versus time.
Figure 8. Gate Charge Characteristic
+
V
DS
V
IN
3774 F08
V
GS
MILLER EFFECT
Q
IN
a b
C
MILLER
= (Q
B
– Q
A
)/V
DS
V
GS
V
+

LTC3774EUHE#TRPBF

Mfr. #:
Manufacturer:
Analog Devices / Linear Technology
Description:
Switching Voltage Regulators Dual, Multiphase Current Mode Synchronous Controller for Sub-Milliohm DCR Sensing
Lifecycle:
New from this manufacturer.
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