Si824x
Preliminary Rev. 0.3 11
Figure 5. NB SOIC-16, Thermal Derating Curve, Dependence of Safety Limiting Values with Case
Temperature per DIN EN 60747-5-2
Table 7. Thermal Characteristics
Parameter
Symbol
NB
SOIC-16
Unit
IC Junction-to-Air
Thermal Resistance
JA
105 °C/W
Table 8. Absolute Maximum Ratings
1
Parameter Symbol Min Typ Max Units
Storage Temperature
2
T
STG
–65 — +150 °C
Ambient Temperature under Bias T
A
–40 — +125 °C
Input-side Supply Voltage VDDI –0.6 — 6.0 V
Driver-side Supply Voltage VDDA, VDDB –0.6 — 30 V
Voltage on any Pin with respect to Ground VIN –0.5 — VDD + 0.5 V
Output Drive Current per Channel I
O
—— 10 mA
Lead Solder Temperature (10 sec) — — 260 °C
Latchup Immunity
3
—— 100 V/ns
Maximum Isolation (Input to Output) — — 2500 V
RMS
Maximum Isolation (Output to Output) — — 1500 V
RMS
Notes:
1. Permanent device damage may occur if the absolute maximum ratings are exceeded. Functional operation should be
restricted to the conditions as specified in the operational sections of this data sheet. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2. VDE certifies storage temperature from –40 to 150 °C.
3. Latchup immunity specification is for slew rate applied across GNDI and GNDA or GNDB.
0 20015010050
60
40
20
0
Case Temperature (ºC)
Safety-Limiting Current (mA)
VDDI = 5.5 V
VDDA, VDDB = 24 V
10
30
50
