NXP Semiconductors
BGU7258
5 GHz ISM SiGe:C low-noise amplifier MMIC with bypass
BGU7258 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2018. All rights reserved.
Product data sheet Rev. 3 — 29 August 2018
10 / 21
T
amb
= 25 °C; V
I(CTRL)
= 0 V; bypass mode
1. V
CC
= 3.0 V
2. V
CC
= 3.3 V
3. V
CC
= 3.6 V
Figure 16. Forward transmission coefficient as a
function of frequency at different supply voltages
T
amb
= 25 °C; V
I(CTRL)
= 0 V; bypass mode
1. V
CC
= 3.0 V
2. V
CC
= 3.3 V
3. V
CC
= 3.6 V
Figure 17. Forward transmission coefficient as a
function of frequency at different supply voltages
T
amb
= 25 °C; V
I(CTRL)
= 0 V; bypass mode
1. V
CC
= 3.0 V
2. V
CC
= 3.3 V
3. V
CC
= 3.6 V
Figure 18. Output reflection coefficient as a function of
frequency at different supply voltages
T
amb
= 25 °C; V
I(CTRL)
= 0 V; bypass mode
1. V
CC
= 3.0 V
2. V
CC
= 3.3 V
3. V
CC
= 3.6 V
Figure 19. Output reflection coefficient as a function of
frequency at different supply voltages
NXP Semiconductors
BGU7258
5 GHz ISM SiGe:C low-noise amplifier MMIC with bypass
BGU7258 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2018. All rights reserved.
Product data sheet Rev. 3 — 29 August 2018
11 / 21
V
CC
= 3.3 V; V
I(CTRL)
= 0 V; bypass mode
1. T
amb
= -40 °C
2. T
amb
= +25 °C
3. T
amb
= +85 °C
Figure 20. Input reflection coefficient as a function of
frequency at different ambient temperatures
V
CC
= 3.3 V; V
I(CTRL)
= 0 V; bypass mode
1. T
amb
= -40 °C
2. T
amb
= +25 °C
3. T
amb
= +85 °C
Figure 21. Input reflection coefficient as a function of
frequency at different ambient temperatures
V
CC
= 3.3 V; V
I(CTRL)
= 0 V; bypass mode
1. T
amb
= -40 °C
2. T
amb
= +25 °C
3. T
amb
= +85 °C
Figure 22. Forward transmission coefficient as a
function of frequency at different ambient temperatures
V
CC
= 3.3 V; V
I(CTRL)
= 0 V; bypass mode
1. T
amb
= -40 °C
2. T
amb
= +25 °C
3. T
amb
= +85 °C
Figure 23. Forward transmission coefficient as a
function of frequency at different ambient temperatures
NXP Semiconductors
BGU7258
5 GHz ISM SiGe:C low-noise amplifier MMIC with bypass
BGU7258 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2018. All rights reserved.
Product data sheet Rev. 3 — 29 August 2018
12 / 21
V
CC
= 3.3 V; V
I(CTRL)
= 0 V; bypass mode
1. T
amb
= -40 °C
2. T
amb
= +25 °C
3. T
amb
= +85 °C
Figure 24. Output reflection coefficient as a function of
frequency at different ambient temperatures
V
CC
= 3.3 V; V
I(CTRL)
= 0 V; bypass mode
1. T
amb
= -40 °C
2. T
amb
= +25 °C
3. T
amb
= +85 °C
Figure 25. Output reflection coefficient as a function of
frequency at different ambient temperatures
T
amb
= 25 °C; gain mode
1. V
CC
= V
I(CTRL)
= 3.0 V
2. V
CC
= V
I(CTRL)
= 3.3 V
3. V
CC
= V
I(CTRL)
= 3.6 V
Figure 26. Noise figure as a function of frequency at
different supply voltages
V
CC
= V
I(CTRL)
= 3.3 V; gain mode
1. T
amb
= -40 °C
2. T
amb
= +25 °C
3. T
amb
= +85 °C
Figure 27. Noise figure as a function of frequency at
different ambient temperatures

BGU7258X

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
RF Amplifier 5 GHz ISM SiGe:C low noise amp
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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