NXP Semiconductors
BGU7258
5 GHz ISM SiGe:C low-noise amplifier MMIC with bypass
BGU7258 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2018. All rights reserved.
Product data sheet Rev. 3 — 29 August 2018
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6 Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Absolute Maximum Ratings are given as limiting
values of stress conditions during operation, that must not be exceeded under the worst case conditions.
Symbol Parameter Conditions Min Max Unit
V
CC
supply voltage RF input AC coupled
[1]
-0.5 +5.0 V
V
I(RF_IN)
input voltage on pin RF_IN DC
[1][2][3]
-0.5 +5.0 V
V
I(RF_OUT)
input voltage on pin RF_OUT DC
[1][2][3]
-0.5 +5.0 V
V
I(CTRL)
input voltage on pin CTRL
[1][2]
-0.5 +5.0 V
T
stg
storage temperature -40 +150 °C
T
j
junction temperature - 150 °C
Human Body Model (HBM); according to the
joint JEDEC/ESDA standard JS-001-2012
- ±2 kVV
ESD
electrostatic discharge voltage
Charged Device Model (CDM); according to
JEDEC standard JESD22-C101
- ±1 kV
f = 5500 MHz; CW
gain mode; V
CC
= 3.3 V
[1]
- 10 dBm
P
i
input power
bypass mode; V
CC
= 3.3 V
[1]
- 10 dBm
[1] Stressed with pulses of 200 ms in duration in an application circuit as depicted in Figure 34.
[2] Warning: due to internal ESD diode protection, the applied DC voltage should not exceed V
CC
+ 0.6 V and should not exceed 5.0 V in order to avoid
excess current.
[3] The RF input and RF output are AC-coupled through an internal DC blocking capacitor.
7 Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Typ Unit
R
th(j-case)
thermal resistance from junction to case 250 K/W
