NXP Semiconductors
BGU7258
5 GHz ISM SiGe:C low-noise amplifier MMIC with bypass
BGU7258 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2018. All rights reserved.
Product data sheet Rev. 3 — 29 August 2018
14 / 21
aaa-013860
5.15 5.25 5.35 5.45 5.55 5.65 5.75 5.85
-8
-7
-6
-5
-4
-3
-2
f (GHz)
P
i(1dB)
P
i(1dB)
(dBm)(dBm)
(1)(1)
(2)(2)
(3)(3)
T
amb
= 25 °C; gain mode
1. V
CC
= V
I(CTRL)
= 3.0 V
2. V
CC
= V
I(CTRL)
= 3.3 V
3. V
CC
= V
I(CTRL)
= 3.6 V
Figure 32. Input power at 1 dB gain compression as a
function of frequency at different supply voltages
aaa-013861
5.15 5.25 5.35 5.45 5.55 5.65 5.75 5.85
-8
-7
-6
-5
-4
-3
-2
f (GHz)
P
i(1dB)
P
i(1dB)
(dBm)(dBm)
(1)(1)
(2)(2)
(3)(3)
V
CC
= V
I(CTRL)
= 3.3 V; gain mode
1. T
amb
= -40 °C
2. T
amb
= +25 °C
3. T
amb
= +85 °C
Figure 33. input power at 1 dB gain compression as a
function of frequency at different ambient temperatures
11.2 Application circuit
In Figure 34 the application diagram as supplied on the evaluation board is given.
aaa-015336
1
2
3
CTRL
LNA gain/bypass
V
CC
RF_IN
2.5 mm
RF_IN RF_OUT
GND
7
6
BGU7258 5
4
V
CC
RF_OUT
GND
GND
C1
shunt
capacitor
50 Ω 50 Ω 50 Ω
Figure 34. Evaluation board schematic
Note that in Figure 34 the schematic for the BGU7258 evaluation board is shown using
only two external components. A DC-decoupling capacitor placed close to V
CC
(pin 6)
and a matching shunt capacitor at RF_IN.
The BGU7258 can also be used without the matching capacitor at RF_IN. However, in
this case the gain will be 0.5 dB lower, the noise figure 0.1 dB higher and the input return
loss less than 10 dB (approximately 8 dB) over the whole 5 GHz ISM band (5 GHz to 6
GHz).
