NXP Semiconductors
BGU7258
5 GHz ISM SiGe:C low-noise amplifier MMIC with bypass
BGU7258 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2018. All rights reserved.
Product data sheet Rev. 3 — 29 August 2018
7 / 21
T
amb
= 25 °C; gain mode
1. V
CC
= V
I(CTRL)
= 3.0 V
2. V
CC
= V
I(CTRL)
= 3.3 V
3. V
CC
= V
I(CTRL)
= 3.6 V
Figure 4. Forward transmission coefficient as a function
of frequency at different supply voltages
T
amb
= 25 °C; gain mode
1. V
CC
= V
I(CTRL)
= 3.0 V
2. V
CC
= V
I(CTRL)
= 3.3 V
3. V
CC
= V
I(CTRL)
= 3.6 V
Figure 5. Forward transmission coefficient as a function
of frequency at different supply voltages
T
amb
= 25 °C; gain mode
1. V
CC
= V
I(CTRL)
= 3.0 V
2. V
CC
= V
I(CTRL)
= 3.3 V
3. V
CC
= V
I(CTRL)
= 3.6 V
Figure 6. Output reflection coefficient as a function of
frequency at different supply voltages
T
amb
= 25 °C; gain mode
1. V
CC
= V
I(CTRL)
= 3.0 V
2. V
CC
= V
I(CTRL)
= 3.3 V
3. V
CC
= V
I(CTRL)
= 3.6 V
Figure 7. Output reflection coefficient as a function of
frequency at different supply voltages
NXP Semiconductors
BGU7258
5 GHz ISM SiGe:C low-noise amplifier MMIC with bypass
BGU7258 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2018. All rights reserved.
Product data sheet Rev. 3 — 29 August 2018
8 / 21
V
CC
= V
I(CTRL)
= 3.3 V; gain mode
1. T
amb
= -40 °C
2. T
amb
= +25 °C
3. T
amb
= +85 °C
Figure 8. Input reflection coefficient as a function of
frequency at different ambient temperatures
V
CC
= V
I(CTRL)
= 3.3 V; gain mode
1. T
amb
= -40 °C
2. T
amb
= +25 °C
3. T
amb
= +85 °C
Figure 9. Input reflection coefficient as a function of
frequency at different ambient temperatures
V
CC
= V
I(CTRL)
= 3.3 V; gain mode
1. T
amb
= -40 °C
2. T
amb
= +25 °C
3. T
amb
= +85 °C
Figure 10. Forward transmission coefficient as a
function of frequency at different ambient temperatures
V
CC
= V
I(CTRL)
= 3.3 V; gain mode
1. T
amb
= -40 °C
2. T
amb
= +25 °C
3. T
amb
= +85 °C
Figure 11. Forward transmission coefficient as a
function of frequency at different ambient temperatures
NXP Semiconductors
BGU7258
5 GHz ISM SiGe:C low-noise amplifier MMIC with bypass
BGU7258 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2018. All rights reserved.
Product data sheet Rev. 3 — 29 August 2018
9 / 21
V
CC
= V
I(CTRL)
= 3.3 V; gain mode
1. T
amb
= -40 °C
2. T
amb
= +25 °C
3. T
amb
= +85 °C
Figure 12. Output reflection coefficient as a function of
frequency at different ambient temperatures
V
CC
= V
I(CTRL)
= 3.3 V; gain mode
1. T
amb
= -40 °C
2. T
amb
= +25 °C
3. T
amb
= +85 °C
Figure 13. Output reflection coefficient as a function of
frequency at different ambient temperatures
T
amb
= 25 °C; V
I(CTRL)
= 0 V; bypass mode
1. V
CC
= 3.0 V
2. V
CC
= 3.3 V
3. V
CC
= 3.6 V
Figure 14. Input reflection coefficient as a function of
frequency at different supply voltages
T
amb
= 25 °C; V
I(CTRL)
= 0 V; bypass mode
1. V
CC
= 3.0 V
2. V
CC
= 3.3 V
3. V
CC
= 3.6 V
Figure 15. Input reflection coefficient as a function of
frequency at different supply voltages

BGU7258X

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
RF Amplifier 5 GHz ISM SiGe:C low noise amp
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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