Philips Semiconductors Product data
P87LPC767
Low power, low price, low pin count (20 pin)
microcontroller with 4-kbyte OTP and 8-bit A/D converter
2002 Mar 25
49
DC ELECTRICAL CHARACTERISTICS
V
DD
= 2.7 V to 6.0 V unless otherwise specified; T
amb
= 0 °C to +70 °C, –40 °C to +85 °C, or –40 °C to +125 °C, unless otherwise specified.
SYMBOL
PARAMETER
TEST CONDITIONS
LIMITS
SYMBOL
PARAMETER
TEST
CONDITIONS
MIN TYP
1,2
MAX
I
Power su
pp
ly current o
p
erating
5.0 V, 20 MHz
11
15 25 mA
I
DD
Po
w
er
s
u
ppl
y
c
u
rrent
,
operating
3.0 V, 10 MHz
11
4 7 mA
I
Power su
pp
ly current Idle mode
5.0 V, 20 MHz
11
6 10 mA
I
ID
Po
w
er
s
u
ppl
y
c
u
rrent
,
Idle
mode
3.0 V, 10 MHz
11
2 4 mA
I
Power su
pp
ly current Power Down mode
5.0 V
11
1 10 µA
I
PD
Po
w
er
s
u
ppl
y
c
u
rrent
,
Po
w
er
Do
w
n
mode
3.0 V
11
1 5 µA
V
RAM
RAM keep-alive voltage 1.5 V
V
In
p
ut low voltage (TTL in
p
ut)
4.0 V < V
DD
< 6.0 V –0.5 0.2 V
DD
–0.1 V
V
IL
Inp
u
t
lo
w v
oltage
(TTL
inp
u
t)
2.7 V < V
DD
< 4.0 V –0.5 0.7 V
V
IL1
Negative going threshold (Schmitt input) –0.5 V
DD
0.4 V
DD
0.3 V
DD
V
V
IH
Input high voltage (TTL input) 0.2 V
DD
+0.9 V
DD
+0.5 V
V
IH1
Positive going threshold (Schmitt input) 0.7 V
DD
0.6 V
DD
V
DD
+0.5 V
HYS Hysteresis voltage 0.2 V
DD
V
V
OL
Output low voltage all ports
5,
9
I
OL
= 3.2 mA, V
DD
= 2.7 V 0.4 V
V
OL1
Output low voltage all ports
5,
9
I
OL
= 20 mA, V
DD
= 2.7 V 1.0 V
V
O
Out
p
ut high voltage all
p
orts
3
I
OH
= –20 µA, V
DD
= 2.7 V V
DD
–0.7 V
V
OH
O
u
tp
u
t
high
v
oltage
,
all
ports
3
I
OH
= –30 µA, V
DD
= 4.5 V V
DD
–0.7 V
V
OH1
Output high voltage, all ports
4
I
OH
= –1.0 mA, V
DD
= 2.7 V V
DD
–0.7 V
C
IO
Input/Output pin capacitance
10
15 pF
I
IL
Logical 0 input current, all ports
8
V
IN
= 0.4 V –50 µA
I
LI
Input leakage current, all ports
7
V
IN
= V
IL
or V
IH
±2 µA
I
Logical 1 to 0 transition current all
p
orts
3, 6
V
IN
= 1.5 V at V
DD
= 3.0 V –30 –250 µA
I
TL
Logical
1
to
0
transition
c
u
rrent
,
all
ports
3
,
6
V
IN
= 2.0 V at V
DD
= 5.5 V –150 –650 µA
R
RST
Internal reset pull-up resistor 40 225 k
V
BO2.5
Brownout trip voltage with BOV = 1
12
T
amb
= 0 °C to +70 °C 2.45 2.5 2.65 V
V
BO3.8
Brownout trip voltage with BOV = 0 3.45 3.8 3.90 V
V
REF
Reference voltage 1.11 1.26 1.41 V
NOTES:
1. Typical ratings are not guaranteed. The values listed are at room temperature, 5 V.
2. See other Figures for details.
3. Ports in quasi-bidirectional mode with weak pull-up (applies to all port pins with pull-ups). Does not apply to open drain pins.
4. Ports in PUSH-PULL mode. Does not apply to open drain pins.
5. In all output modes except high impedance mode.
6. Port pins source a transition current when used in quasi-bidirectional mode and externally driven from 1 to 0. This current is highest when
V
IN
is approximately 2 V.
7. Measured with port in high impedance mode. Parameter is guaranteed but not tested at cold temperature.
8. Measured with port in quasi-bidirectional mode.
9. Under steady state (non-transient) conditions, I
OL
must be externally limited as follows:
Maximum I
OL
per port pin: 20 mA
Maximum total I
OL
for all outputs: 80 mA
Maximum total I
OH
for all outputs: 5 mA
If I
OL
exceeds the test condition, V
OL
may exceed the related specification. Pins are not guaranteed to sink current greater than the listed
test conditions.
10.Pin capacitance is characterized but not tested.
11. The I
DD
, I
ID
, and I
PD
specifications are measured using an external clock with the following functions disabled: comparators, brownout
detect, and watchdog timer. For V
DD
= 3 V, LPEP = 1. Refer to the appropriate figures on the following pages for additional current drawn by
each of these functions and detailed graphs for other frequency and voltage combinations.
12.Devices initially operating at V
DD
= 2.7 V or above and at f
OSC
= 10 MHz or less are guaranteed to continue to execute instructions correctly
at the brownout trip point. Initial power-on operation below V
DD
= 2.7 V is not guaranteed.
COMPARATOR ELECTRICAL CHARACTERISTICS
V
DD
= 3.0 V to 6.0 V unless otherwise specified; T
amb
= 0 °C to +70 °C, –40 °C to +85 °C, or –40 °C to +125 °C, unless otherwise specified
Philips Semiconductors Product data
P87LPC767
Low power, low price, low pin count (20 pin)
microcontroller with 4-kbyte OTP and 8-bit A/D converter
2002 Mar 25
50
SYMBOL
PARAMETER
TEST CONDITIONS
LIMITS
SYMBOL
PARAMETER
TEST
CONDITIONS
MIN TYP MAX
V
IO
Offset voltage comparator inputs
1
±10 mV
V
CR
Common mode range comparator inputs 0 V
DD
–0.3 V
CMRR Common mode rejection ratio
1
–50 dB
Response time 250 500 ns
Comparator enable to output valid 10 µs
I
IL
Input leakage current, comparator 0 < V
IN
< V
DD
±10 µA
NOTE:
1. This parameter is guaranteed by characterization, but not tested in production.
A/D CONVERTER DC ELECTRICAL CHARACTERISTICS
Vdd = 3.0 V to 6.0 V unless otherwise specified;
Tamb = 0 to +70 °C for commercial, -40 °C to +85 °C for industrial, or –40 °C to +125 °C for extended industrial, unless otherwise specified.
SYMBOL
PARAMETER
TEST CONDITIONS
LIMITS
UNIT
SYMBOL
PARAMETER
TEST
CONDITIONS
MIN MAX
UNIT
AV
IN
Analog input voltage V
SS
- 0.2 V
DD
+ 0.2 V
R
REF
Resistance between V
DD
and V
SS
A/D enabled tbd tbd k
C
IA
Analog input capacitance 15 pF
DL
e
Differential non-linearity
1,2,3
±1 LSB
IL
e
Integral non-linearity
1,4
±1 LSB
OS
e
Offset error
1,5
±1 LSB
G
e
Gain error
1,6
±1 %
A
e
Absolute voltage error
1,7
±1 LSB
M
CTC
Channel-to-channel matching ±1 LSB
C
t
Crosstalk between inputs of port
8
0 to 100 kHz -60 dB
- Input slew rate 100 V/ms
- Input source impedance 10 k
NOTES:
1. Conditions: V
SS
= 0 V; V
DD
= 5.12 V.
2. The A/D is monotonic, there are no missing codes
3. The differential non-linearity (DL
e
) is the difference between the actual step width and the ideal step width. See Figure 40.
4. The integral non-linearity (IL
e
) is the peak difference between the center of the steps of the actual and the ideal transfer curve after
appropriate adjustment of gain and offset errors. See Figure 40.
5. The offset error (OS
e
) is the absolute difference between the straight line which fits the actual transfer curve (after removing gain error), and
the straight line which fits the ideal transfer curve. See Figure 40.
6. The gain error (G
e
) is the relative difference in percent between the straight line fitting the actual transfer curve (after removing offset error),
and the straight line which fits the ideal transfer curve. Gain error is constant at every point on the transfer curve. See Figure 40.
7. The absolute voltage error (A
e
) is the maximum difference between the center of the steps of the actual transfer curve of the non-calibrated
ADC and the ideal transfer curve.
8. This should be considered when both analog and digital signals are input simultaneously to A/D pins.
9. Changing the input voltage faster than this may cause erroneous readings.
10.A source impedance higher than this driving an A/D input may result in loss of precision and erroneous readings.
Philips Semiconductors Product data
P87LPC767
Low power, low price, low pin count (20 pin)
microcontroller with 4-kbyte OTP and 8-bit A/D converter
2002 Mar 25
51
255
254
253
252
251
(2)
(1)
256250 251 252 253 254 255
7123456
7
6
5
4
3
2
1
0
250
(5)
(4)
(3)
1 LSB
(ideal)
Code
Out
Offset
error
OS
e
Gain
error
G
e
AV
IN
(LSB
ideal
)
Offset
error
OS
e
V
DD
- V
SS
1 LSB =
256
(1) Example of an actual transfer curve.
(2) The ideal transfer curve.
(3) Differential non-linearity (DL
e
).
(4) Integral non-linearity (IL
e
).
(5) Center of a step of the actual transfer curve.
SU01355
Figure 40. A/D Conversion Characteristics

P87LPC767FN,112

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
IC MCU 8BIT 4KB OTP 20DIP
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union