7
AT25128/256
0872O–SEEPR–03/05
WRITE ENABLE (WREN): The device will power-up in the write disable state when V
CC
is applied. All programming instructions must therefore be preceded by a Write Enable
instruction.
WRITE DISABLE (WRDI): To protect the device against inadvertent writes, the Write
Disable instruction disables all programming modes. The WRDI instruction is indepen-
dent of the status of the WP
pin.
READ STATUS REGISTER (RDSR): The Read Status Register instruction provides
access to the status register. The Ready/Busy and Write Enable status of the device
can be determined by the RDSR instruction. Similarly, the Block Write Protection bits
indicate the extent of protection
employed. These bits are set by using the WRSR instruc-
tion
.
WRITE STATUS REGISTER (WRSR): The WRSR instruction allows the user to select
one of four levels of protection. The AT25128/256 is divided into four array segments.
Top quarter (1/4), top half (1/2), or all of the memory segments can be protected. Any of
the data within any selected segment will therefore be READ only. The block write pro-
tection levels and corresponding status register control bits are shown in Table 8.
The three bits, BP0, BP1, and WPEN are nonvolatile cells that have the same properties
and functions as the regular memory cells (e.g. WREN, t
WC
, RDSR).
Table 6. Status Register Format
Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0
WPEN X X X BP1 BP0 WEN RDY
Table 7. Read Status Register Bit Definition
Bit Definition
Bit 0 (RDY) Bit 0 = “0” (RDY) indicates the device is READY.
Bit 0 = “1” indicates the write cycle is in progress.
Bit 1 (WEN) Bit 1 = “0” indicates the device is not WRITE ENABLED. Bit 1 = 1
indicates the device is WRITE ENABLED.
Bit 2 (BP0) See Table 8.
Bit 3 (BP1) See Table 8.
Bits 4 - 6 are “0”s when device is not in an internal write cycle.
Bit 7 (WPEN) See Table 9.
Bits 0 – 7 are “1”s during an internal write cycle.
Table 8. Block Write Protect Bits
Level
Status Register Bits Array Addresses Protected
BP1 BP0 AT25128 AT25256
0 0 0 None None
1(1/4) 0 1 3000 - 3FFF 6000 - 7FFF
2(1/2) 1 0 2000 - 3FFF 4000 - 7FFF
3(All) 1 1 0000 - 3FFF 0000 - 7FFF
8
AT25128/256
0872O–SEEPR–03/05
The WRSR instruction also allows the user to enable or disable the write protect (WP)
pin through the use of the Write Protect Enable (WPEN) bit. Hardware write protection is
enabled when the WP
pin is low and the WPEN bit is “1”. Hardware write protection is
disabled when either the WP
pin is high or the WPEN bit is “0.” When the device is hard-
ware write protected, writes to the Status Register, including the Block Protect bits and
the WPEN bit, and the block-protected sections in the memory array are disabled.
Writes are only allowed to sections of the memory which are not block-protected.
NOTE: When the WPEN bit is hardware write protected, it cannot be changed back to
“0”, as long as the WP
pin is held low.
READ SEQUENCE (READ): Reading the AT25128/256 via the SO pin requires the
following sequence. After the CS
line is pulled low to select a device, the READ op-code
is transmitted via the SI line followed by the byte address to be read (see Table 10 on
page 9). Upon completion, any data on the SI line will be ignored. The data (D7
D0) at
the specified address is then shifted out onto the SO line. If only one byte is to be read,
the CS
line should be driven high after the data comes out. The read sequence can be
continued since the byte address is automatically incremented and data will continue to
be shifted out. When the highest address is reached, the address counter will roll over to
the lowest address allowing the entire memory to be read in one continuous read cycle.
WRITE SEQUENCE (WRITE): In order to program the AT25128/256, two separate
instructions must be executed. First, the device must be write enabled via the WREN
instruction. Then a Write instruction may be executed. Also, the address of the memory
location(s) to be programmed must be outside the protected address field location
selected by the block write protection level. During an internal write cycle, all commands
will be ignored except the RDSR instruction.
A Write instruction requires the following sequence. After the CS
line is pulled low to
select the device, the Write op-code is transmitted via the SI line followed by the byte
address and the data (D7
D0) to be programmed (see Table 10 on page 9). Program-
ming will start after the CS
pin is brought high. The low-to-high transition of the CS pin
must occur during the SCK low time immediately after clocking in the D0 (LSB) data bit.
The Ready/Busy status of the device can be determined by initiating a Read Status
Register (RDSR) instruction. If Bit 0 = “1”, the write cycle is still in progress. If Bit 0 = “0”,
the write cycle has ended. Only the RDSR instruction is enabled during the write pro-
gramming cycle.
Table 9. WPEN Operation
WPEN WP WEN
Protected
Blocks
Unprotected
Blocks
Status
Register
0 X 0 Protected Protected Protected
0 X 1 Protected Writable Writable
1 Low 0 Protected Protected Protected
1 Low 1 Protected Writable Protected
X High 0 Protected Protected Protected
X High 1 Protected Writable Writable
9
AT25128/256
0872O–SEEPR–03/05
The AT25128/256 is capable of a 64-byte page write operation. After each byte of data
is received, the six-low order address bits are internally incremented by one; the high-
order bits of the address will remain constant. If more than 64 bytes of data are transmit-
ted, the address counter will roll over and the previously written data will be overwritten.
The AT25128/256 is automatically returned to the write disable state at the completion
of a write cycle.
NOTE: If the device is not Write enabled (WREN), the device will ignore the Write
instruction and will return to the standby state, when CS
is brought high. A new CS fall-
ing edge is required to reinitiate the serial communication.
Timing Diagrams (for SPI Mode 0 (0, 0))
Figure 3. Synchronous Data Timing
Table 10. Address Key
Address AT25128 AT25256
A
N
A
13
- A
0
A
14
- A
0
Don’t Care Bits A
15
- A
14
A
15
SO
V
OH
V
OL
HI-Z
HI-Z
t
V
VALID IN
SI
V
IH
V
IL
t
H
t
SU
t
DIS
SCK
V
IH
V
IL
t
WH
t
CSH
CS
V
IH
V
IL
t
CSS
t
CS
t
WL
t
HO

AT25128N1-10SI-1.8

Mfr. #:
Manufacturer:
Description:
IC EEPROM 128K SPI 16SOIC
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New from this manufacturer.
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