AX8052F100
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7
SPECIFICATIONS
Table 3. ABSOLUTE MAXIMUM RATINGS
Symbol Description Condition Min Max Units
VDD_IO Supply voltage 0.5 5.5 V
IDD Supply current 100 mA
P
tot
Total power consumption 800 mW
I
I1
DC current into any pin 10 10 mA
I
I2
DC current into pins 100 100 mA
I
O
Output Current 40 mA
V
ia
Input voltage digital pins 0.5 5.5 V
V
es
Electrostatic handling HBM 2000 2000 V
T
amb
Operating temperature 40 85 °C
T
stg
Storage temperature 65 150 °C
T
j
Junction Temperature 150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
DC Characteristics
Table 4. SUPPLIES
Symbol Description Condition Min Typ Max Units
T
AMB
Operational ambient temperature 40 27 85 °C
VDD_IO I/O and voltage regulator supply voltage 1.8 3.0 3.6 V
VDD
IO_R1
I/O voltage ramp for reset activation;
Note 1
Ramp starts at VDD_IO 0.1 V 0.1 V/ms
VDD
IO_R2
I/O voltage ramp for reset activation;
Note 1
Ramp starts at 0.1V < VDD_IO < 0.7 V 3.3 V/ms
V
BOUT
Brownout Threshold Note 2 1.3 V
I
DEEPSLEEP
Deep Sleep current 50 nA
I
SLEEP256PIN
Sleep current, 256 Bytes RAM retained Wakeup from dedicated pin 450 nA
I
SLEEP256
Sleep current, 256 Bytes RAM retained Wakeup Timer running at 640 Hz 850 nA
I
SLEEP4K
Sleep current, 4.25 kBytes RAM
retained
Wakeup Timer running at 640 Hz 1.5
mA
I
SLEEP8K
Sleep current, 8.25 kBytes RAM
retained
Wakeup Timer running at 640 Hz 2.2
mA
I
MCU
Microcontroller Running Power
consumption
All peripherals disabled 150
mA/
MHz
I
VSUP
Voltage Supervisor Run and Standby mode 85
mA
I
XTALOSC
Crystal oscillator current 20 MHz 160
mA
I
LFXTALOSC
Low Frequency Crystal Oscillator
current
32 kHz 700 nA
I
RCOSC
Internal Oscillator current 20 MHz 210
mA
I
LPOSC
Internal Low Power Oscillator current
10 kHz 650 nA
640 Hz 210 nA
I
ADC
ADC current 311 kSample/s, DMA 5 MHz 1.1 mA
1. If VDD_IO ramps cannot be guaranteed, an external reset circuit is recommended, see the AX8052 Application Note: Power On Reset
2. Digital circuitry is functional down to typically 1 V.
AX8052F100
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Table 5. LOGIC
Symbol Description Condition Min Typ Max Units
Digital Inputs
V
T+
Schmitt trigger low to high threshold point
VDD_IO = 3.3 V
1.55 V
V
T
Schmitt trigger high to low threshold point 1.25 V
V
IL
Input voltage, low 0.8 V
V
IH
Input voltage, high 2.0 V
V
IPA
Input voltage range, Port A 0.5 VDD_IO V
V
IPBC
Input voltage range, Ports B, C 0.5 5.5 V
I
L
Input leakage current 10 10
mA
R
PU
Programmable PullUp Resistance 65
kW
Digital Outputs
I
OH
P[ABC]x Output Current, high V
OH
= 2.4 V 8 mA
I
OL
P[ABC]x Output Current, low V
OL
= 0.4 V 8 mA
I
PROH
PRx Output Current, high V
OH
= 2.4 V 2 mA
I
PROL
PRx Output Current, low V
OL
= 0.4 V 2 mA
I
OZ
Tristate output leakage current 10 10
mA
AC Characteristics
Table 6. CRYSTAL OSCILLATOR
Symbol Description Condition Min Typ Max Units
f
XTAL
Crystal frequency 8 20 MHz
gm
xosc
Transconductance oscillator
Note 1
XTALOSCGM = 0001 0.5
mS
XTALOSCGM = 0010 1.0
XTALOSCGM = 1110 4.5
XTALOSCGM = 1111 11.0
RIN
xosc
Input DC impedance 10
kW
1. During normal operation the oscillator transconductance is automatically adjusted for lowest power consumption
Table 7. LOW FREQUENCY CRYSTAL OSCILLATOR
Symbol Description Condition Min Typ Max Units
f
LPXTAL
Crystal frequency 32 150 kHz
gm
lpxosc
Transconductance oscillator
LPXOSCGM = 00110 3.5 ms
LPXOSCGM = 01000 4.6
LPXOSCGM = 01100 6.9
LPXOSCGM = 10000 9.1
RIN
lpxosc
Input DC impedance 10
MW
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Table 8. INTERNAL LOW POWER OSCILLATOR
Symbol Description Condition Min Typ Max Units
f
LPOSC
Oscillation Frequency
LPOSCFAST = 0
Factory calibration applied. Over the
full temperature and voltage range
630 640 650 Hz
LPOSCFAST = 1
Factory calibration applied. Over the
full temperature and voltage range
10.08 10.24 10.39 kHz
Table 9. INTERNAL RC OSCILLATOR
Symbol Description Condition Min Typ Max Units
f
LFRPCOSC
Oscillation Frequency Factory calibration applied. Over the
full temperature and voltage range
19.8 20 20.2 MHz
Table 10. MICROCONTROLLER
Symbol Description Condition Min Typ Max Units
T
SYSCLKL
SYSCLK Low 27 ns
T
SYSCLKH
SYSCLK High 21 ns
T
SYSCLKP
SYSCLK Period 47 ns
T
FLWR
FLASH Write Time 2 Bytes 20
ms
T
FLPE
FLASH Page Erase 1 kBytes 2 ms
T
FLE
FLASH Secure Erase 64 kBytes 10 ms
T
FLEND
FLASH Endurance: Erase Cycles 10 000 100 000 Cycles
T
FLRETroom
FLASH Data Retention
25°C
See Figure 3 for the lower limit
set by the memory qualification
100
Years
T
FLREThot
85°C
See Figure 3 for the lower limit
set by the memory qualification
10
Figure 3. FLASH Memory Qualification Limit for Data Retention after 10k Erase Cycles
10
100
1000
10000
100000
15 25 35 45 55 65 75 85
Temperature [5C]
Data retention time [years]

MDK-2-GEVK

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Switching Controllers MDK-2 BASE KIT
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