SL3S1203_1213 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.4 — 17 March 2014
178844 25 of 37
NXP Semiconductors
SL3S1203_1213
UCODE G2iL and G2iL+
12. Characteristics
12.1 UCODE G2iL, G2iL+ bare die characteristics
[1] Power to process a Query command.
[2] Measured with a 50 source impedance.
[3] At minimum operating power.
[4] It has to be assured the reader (system) is capable of providing enough field strength to give +12 dBm at the chip otherwise
communication with the chip will not be possible.
[5] Enables tag designs to be within ETSI limits for return link data rates of e.g. 320 kHz/M4.
[6] Will result in up to 10 dB higher tag backscatter power at high field strength.
[7] Results in approx. 18.5 dBm tag sensitivity on a 2 dBi gain antenna.
Table 27. G2iL, G2iL+ RF interface characteristics (RFN, RFP)
Symbol Parameter Conditions Min Typ Max Unit
f
i
input frequency 840 - 960 MHz
Normal mode - no external supply, read range reduction OFF
P
i(min)
minimum input power READ sensitivity
[1][2][7]
- 18 - dBm
P
i(min)
minimum input power WRITE sensitivity,
(write range/read
range - ratio)
-30-%
C
i
input capacitance parallel
[3]
-0.77-pF
Q quality factor 915 MHz
[3]
-9.7--
Z impedance 866 MHz
[3]
- 25 -j237 -
915 MHz
[3]
- 23 -j224 -
953 MHz
[3]
- 21 -j216 -
External supply mode - VDD pad supplied, read range reduction OFF
P
i(min)
minimum input power Ext. supplied READ
[1][2]
- 27 - dBm
Ext. supplied WRITE
[2]
- 27 - dBm
Z impedance externally supplied,
915 MHz
[3]
-7 -j230-
Read range reduction ON - no external supply
P
i(min)
minimum input power 4R on READ
[1][2][4]
-+12-dBm
4R on WRITE
[2][4]
-+12-dBm
Z impedance 4R on, 915 MHz
[3]
-18 -j2-
Modulation resistance
R resistance modulation
resistance, max.
backscatter = off
[5]
-170-
modulation
resistance, max.
backscatter = on
[6]
-55-
SL3S1203_1213 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.4 — 17 March 2014
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NXP Semiconductors
SL3S1203_1213
UCODE G2iL and G2iL+
[1] Activates Digital Output (OUT pin), increases read range (external supplied).
[2] Activates Digital Output (OUT pin), increases read and write range (external supplied).
[3] Operating the chip outside the specified voltage range may lead to undefined behaviour.
[4] Either the voltage or the current needs to be above given values to guarantee specified functionality.
[5] No proper operation is guaranteed if both, voltage and current, limits are exceeded.
[1] Is the sum of the allowed capacitance of the VDD and OUT pin referenced to RFN.
[2] Is the maximum allowed RF input voltage coupling to the VDD/OUT pin to guarantee undisturbed chip functionality.
[3] Resistance between VDD and OUT pin in checked during power up only.
[4] Resistance range to achieve tamper alarm flag = 1.
[5] Resistance range to achieve tamper alarm flag = 0:
Table 28. VDD pin characteristics
Symbol Parameter Conditions Min Typ Max Unit
Minimum supply voltage/current - without assisted EEPROM WRITE
[1][3][4]
V
DD
supply voltage minimum voltage - - 1.8 V
I
DD
supply current minimum current,
I
out-^-
= 0 A
-- 7A
I
out
= 100 A--110A
Minimum supply voltage/current - assisted EEPROM READ and WRITE
[2][3][4]
V
DD
supply voltage minimum voltage,
I
out
= 0 A
- 1.8 1.85 V
I
out
= 100 A--1.95V
I
DD
supply current minimum current,
I
out
= 0 A
-- 125
A
I
out
= 100 A--265A
Maximum supply voltage/current
[3][5]
V
DD
supply voltage absolute maximum
voltage
2.2 - - V
I
i(max)
maximum input current absolute maximum
current
280 - - A
Table 29. G2iL, G2iL+ VDD and OUT pin characteristics
Symbol Parameter Conditions Min Typ Max Unit
OUT pin characteristics
V
OL
Low-level output voltage Isink = 1 mA - - 100 mV
V
OH
HIGH-level output voltage VDD = 1.8 V; Isource
=
100 µA
1.5 - - V
VDD/OUT pin characteristics
C
L
load capacitance VDD - OUT pin max.
[1]
-- 5pF
V
o
output voltage maximum RF peak
voltage on VDD-OUT
pins
[2]
-- 500mV
VDD/OUT pin tamper alarm characteristics
[3]
R
L(max)
maximum load resistance resistance range high
[4]
-- <2 M
R
L(min)
minimum load resistance resistance range low
[5]
>20 - - M
SL3S1203_1213 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.4 — 17 March 2014
178844 27 of 37
NXP Semiconductors
SL3S1203_1213
UCODE G2iL and G2iL+
For further reading we recommend application note “FAQ UCODE G2iL+“ (Ref. 21)
describing the output characteristics more in detail. An example schematic is available in
application note “UCODE G2iL+ Demo board Manual“ (Ref. 22
). The documents are
available at NXP Document Control or at the website www.nxp.com.
[1] T
amb
25 C
12.2 UCODE G2iL SOT886 characteristics
[1] Power to process a Query command.
[2] Measured with a 50 source impedance.
[3] At minimum operating power.
Remark: For DC and memory characteristics refer to Table 28, Table 29 and Table 30.
Table 30. G2iL, G2iL+ memory characteristics
Symbol Parameter Conditions Min Typ Max Unit
EEPROM characteristics
t
ret
retention time T
amb
55 C20--year
N
endu(W)
write endurance 1000 10000
[1]
- cycle
Table 31. G2iL RF interface characteristics (RFN, RFP)
Symbol Parameter Conditions Min Typ Max Unit
Normal mode - no external supply, read range reduction OFF
P
i(min)
minimum input power READ
sensitivity
[1][2]
- 17.6 - dB
m
Z impedance 915 MHz
[3]
-21 j199 -
Normal mode - externally supplied, read range reduction OFF
P
i(min)
minimum input power READ
sensitivity
[1][2]
- 27 - dB
m
Z impedance 915 MHz
[3]
-5.6 j204 -

SL3S1203FTB0,115

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NXP Semiconductors
Description:
RFID Transponders UCODE G2IL AND G2IL
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