6.07
JANUARY 2009
DSC-3099/6
1
©2009 Integrated Device Technology, Inc.
HIGH SPEED 64K (4K X 16 BIT)
SEQUENTIAL ACCESS
RANDOM ACCESS MEMORY (SARAM
)
Functional Block Diagram
IDT70824S/L
Features
High-speed access
Military: 35/45ns (max.)
Commercial: 20/25/35/45ns (max.)
Low-power operation
IDT70824S
Active: 775mW (typ.)
Standby: 5mW (typ.)
IDT70824L
Active: 775mW (typ.)
Standby: 1mW (typ.)
4K x 16 Sequential Access Random Access Memory (SARAM
)
Sequential Access from one port and standard Random
Access from the other port
Separate upper-byte and lower-byte control of the
Random Access Port
High speed operation
20ns tAA for random access port
20ns tCD for sequential port
25ns clock cycle time
Architecture based on Dual-Port RAM cells
Compatible with Intel BMIC and 82430 PCI Set
Width and Depth Expandable
Sequential side
Address based flags for buffer control
Pointer logic supports up to two internal buffers
Battery backup operation - 2V data retention
TTL-compatible, single 5V (+10%) power supply
Available in 80-pin TQFP and 84-pin PGA
Military product compliant to MIL-PRF-38535 QML
Industrial temperature range (–40°C to +85°C) is available
for selected speeds
Description
The IDT70824 is a high-speed 4K x 16-Bit Sequential Access Random
Access Memory (SARAM). The SARAM offers a single-chip solution to
buffer data sequentially on one port, and be accessed randomly (asyn-
chronously) through the other port. The device has a Dual-Port RAM
based architecture with a standard SRAM interface for the random
(asynchronous) access port, and a clocked interface with counter se-
Random
Access
Port
Controls
Sequential
Access
Port
Controls
4KX16
Memory
Array
Data
L
Data
R
Addr
L
Addr
R
I/O
0-15
SI/O
0-15
Pointer/
Counter
12
Start Address for Buffer #1
End Address for Buffer #1
Start Address for Buffer #2
End Address for Buffer #2
Flow Control Buffer
Flag Status
EOB
1
EOB
2
12
12
12
16
12
12
RST
COMPARATOR
LB
UB
A
0-11
12
CE
OE
R/W
LSB
MSB
CMD
16
RST
SCLK
CNTEN
SOE
SSTRT
2
SCE
SR/W
SLD
SSTRT
1
16
12
3099 drw 01
Reg.
,
2
IDT70824S/L
High-Speed 4K x 16 Sequential Access Random Access Memory Military and Commercial Temperature Ranges
3099 drw 02
4
5
6
7
8
9
10
INDEX
11
12
13
14
1
80 79 78 77 76 75 74 73 72 71
23 24 25 26 27 28 29 30 31 32 33 34 35
3
2
15
16
17
18
19
20
21 22 36 37 38 39 40
41
42
43
62 61
60
59
58
57
56
55
54
53
52
6364
51
50
49
48
47
46
45
44
70 69 68 67 66 65
IDT70824PF
PN80-1
(4)
80-Pin TQFP
Top View
(5)
G
N
D
G
N
D
G
N
D
V
C
C
V
C
C
G
N
D
V
C
C
N
/
C
G
N
D
G
N
D
V
CC
A
10
A
9
A
8
A
7
A
6
A
5
A
4
A
3
A
1
A
2
CMD
CE
LB
UB
R/W
OE
A
11
V
CC
A
0
SSTRT
1
SCLK
GND
SI/O
0
N/C
I/O
0
CNTEN
SLD
SCE
SR/W
RST
SSTRT
2
SI/O
1
GND
GND
GND
EOB
2
V
CC
SOE
EOB
1
I
/
O
1
I
/
O
1
5
I
/
O
1
4
I
/
O
1
3
I
/
O
1
2
I
/
O
2
I
/
O
3
V
C
C
I
/
O
4
I
/
O
5
I
/
O
7
I
/
O
6
I
/
O
9
I
/
O
1
0
I
/
O
1
1
I
/
O
8
S
I
/
O
9
S
I
/
O
7
S
I
/
O
5
S
I
/
O
1
0
S
I
/
O
1
5
S
I
/
O
1
4
S
I
/
O
8
S
I
/
O
1
1
S
I
/
O
1
2
S
I
/
O
4
S
I
/
O
3
S
I
/
O
2
S
I
/
O
1
3
S
I
/
O
6
,
NOTES:
1. All V
CC pins must be connected to power supply.
2. All GND pins must be connected to ground supply.
3. PN80-1 package body is approximately 14mm x 14mm x 1.4mm.
G84-3 package body is approximately 1.12 in x 1.12 in x .16 in.
4. This package code is used to reference the package diagram.
5. This text does not indicate orientation of the actual part-marking.
quencing for the sequential (synchronous) access port.
Fabricated using CMOS high-performance technology, this memory
device typically operates on less than 775mW of power at maximum high-
speed clock-to-data and Random Access. An automatic power down
feature, controlled by CE, permits the on-chip circuitry of each port to enter
a very low standby power mode.
The IDT70824 is packaged in a 80-pin Thin Quad Flatpack (TQFP)
or 84-pin Pin Grid Array (PGA). Military grade product is manufactured
in compliance with the latest revision of MIL-PRF-38535 QML, making it
ideally suited to military temperature applications demanding the highest
level of performance and reliability.
Pin Configurations
(1,2,3)
,,
3099 drw 03
63 61 60 58 55 54
51
48 46 45
66
67
69
72
75
76
79
81
82
83
125
7
8
11
10
12
14 17 20
23
26
28 29
32 31
33 35
38
41
43
IDT70824G
G84-3
(4)
84-Pin PGA
Top View
(5)
ABCDEFGH J KL
42
59 56 49
50
40
25
27
30
36
34
37
39
84 3 4 6 9 15 13 16 18
22 24
19 21
68
71
70
77
80
11
10
09
08
07
06
05
04
03
02
01
64
65
62
57 53
52
47 44
73
74
78
A
3
NC R/WUB
A
1
CE
A
5
A
6
A
8
A
9
A
11
I/O
14
NC
V
CC
CMD
A
2
NC SI/O
15
I/O
12
I/O
13
SI/O
14
SI/O
13
I/O
9
I/O
5
I/O
8
SI/O
9
SI/O
10
SI/O
6
I/O
4
SI/O
4
SI/O
5
I/O
3
GND
SSTRT1
SCLK GND SI/O
2
V
CC
I/O
7
I/O
6
GND
SI/O
8
SI/O
7
GND
NC
I/O
0
EOB
2
SOE RST
SLD
SI/O
1
SI/O
3
SCE
SI/O
0
I/O
1
GND
CNTEN
GND
SSTRT2
SR/W GND NC
NC
V
CC
I/O
15
GND
OE
A
0
LB
V
CC
A
10
GND
A
4
A
7
I/O
10
V
CC
V
CC
SI/O
11
I/O
11
SI/O
12
I/O
2
V
CC
GND
Pin 1
Designator
EO B
1
6.42
IDT70824S/L
High-Speed 4K x 16 Sequential Access Random Access Memory Military and Commercial Temperature Ranges
3
Pin Descriptions: Random Access Port
(1)
Pin Descriptions: Sequential Access Port
(1)
NOTE:
1. "I/O" is bidirectional Input and Output. "I" is Input and "O" is Output.
SYMBOL NAME I/O DESCRIPTION
A
0
-A
11
Address Lines I Address inputs to access the 4096-word (16-Bit) memory array.
I/O
0
-I/O
15
Inputs/Outputs I Random access data inputs/outputs for 16-Bit wide data.
CE
Chip Enable I When CE is LOW, the random access port is enabled. When CE is HIGH, the random access port is disabled
into power-down mode and the I/O outputs are in the High-impedance state. All data is retained during CE =
V
IH
, unless it is altered by the sequential port CE and CMD may not be LOW at the same time.
CMD
Control Register Enable I When CMD is LOW, address lines A
0
-A
2
, R/W, and inputs and outputs I/O
0
-I/O
12
, are used to access the
control register, the flag register and the start and end of buffer registers. CMD and CE may not be LOW at the
same time.
R/W Read/Write Enable I If CE is LOW and CMD is HIGH, data is written into the array when R/W is LOW and read out of the array when
R/W is HIGH. If CE is HIGH and CMD is LOW, R/W is used to access the buffer command registers. CE and
CMD may not be LOW at the same time.
OE
Output Enable I When OE is LOW and R/W is HIGH, I/O
0
-I/O
15
outputs are enabled. When OE is HIGH, the I/O outputs are in
the High-impedance state.
LB, UB
Lower Byte, Upper Byte
Enables
I When LB is LOW, I/O
0
-I/O
7
are accessible for read and write operations. When LB is HIGH, I/O
0
-I/O
7
are tri-
stated and blocked during read and write operations. UB controls access for I/O
8
-I/O
15
in the same manner and
is asynchronous
from LB.
V
CC
Power Supply I Seven +5 power supply pins. All V
CC
pins must be connected to the same +5V V
CC
supply.
GND Ground I Ten ground pins. All ground pins must be connected to the same ground supply.
3099 tbl 01
SYMBOL NAME I/O DESCRIPTION
SI/O0-15 Inputs/Outputs I/O Sequential data inputs/outputs for 16-bit wide data.
SCLK Clock I SI/O
0
-SI/O
15
,SCE, SR/W, and SLD are registered on the LOW-to-HIGH transition of SCLK. Also, the sequential
access port address pointer increments by 1 on each LOW-TO-HIGH transition of SCLK when CNTEN is LOW.
SCE
Chip Enable I When SCE is LOW, the sequential access port is enabled on the LOW-to-HIGH transition of SCLK. When SCE
is HIGH, the sequential access port is disabled into powered-down mode on the LOW-to-HIGH transition of
SCLK, and the SI/O outputs are in the High-impedance state. All data is retained, unless altered by the random
access port.
CNTEN
Counter Enable I When CNTEN is LOW, the address pointer increments on the LOW-to-HIGH transition of SCLK. This function is
independent of CE.
SR/W Read/Write Enable I When SR/W and SCE are LOW, a write cycle is initiated on the LOW-to-HIGH transition of SCLK. When SR/W is
HIGH, and SCE and SOE are LOW, a read cycle is initiated on the LOW-to-HIGH transition of SCLK. Termination
of a write cycle is done on the LOW-to-HIGH transition of SCLK if SR/W or SCE is HIGH.
SLD
Address Pointer Load Control I When SLD is sampled LOW, there is an internal delay of one cycle before the address pointer changes. When
SLD is LOW, data on the inputs SI/O
0
-SI/O
11
is loaded into a data-in register on the LOW-to-HIGH transition of
SCLK. On the Cycle following SLD, the address pointer charges to the address location contained in the data-
in register. SSTRT
1
and SSTRT
2
may not be LOW while SLD is LOW or during the cycle following SLD.
SSTRT
1
,
SSTRT
2
Load Start of Address
Register
I When SSTRT
1
or SSTRT
2
is LOW, the start of address register #1 or #2 is loaded into the address pointer on
the LOW-to-HIGH transition of SCLK. The start addresses are stored in internal registers. SSTRT
1
and SSTRT
2
may not be LOW while SLD is LOW or during the cycle following SLD.
EOB
1
,
EOB
2
End of Buffer Flag O
EOB
1
or EOB
2
is output low when the address pointer is incremented to match the address stored in the end
of buffer registers. The flags can be cleared by either asserting RST LOW or by writing zero into Bit 0 and/or
Bit 1 of the control register at address 101. EOB
1
and EOB
2
are dependent on separate internal registers, and
therefore separate match addresses.
SOE
Output Enable I
SOE controls the data outputs and is independent of SCLK. When SOE is LOW, output buffers and the
sequentially addressed data is output. When SOE is HIGH, the SI/O output bus is in the High-impedance state.
SOE is asynchronous to SCLK.
RST
Reset I When RST is LOW, all internal registers are set to their default state, the address pointer is set to zero and the
EOB
1
and EOB
2
flags are set HIGH. RST is asynchronous to SCLK.
3099 tbl 02

IDT70824S25PF8

Mfr. #:
Manufacturer:
Description:
IC RAM 64K PARALLEL 80TQFP
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union