4
IDT70824S/L
High-Speed 4K x 16 Sequential Access Random Access Memory Military and Commercial Temperature Ranges
Absolute Maximum Ratings
(1)
Capacitance
(TA = +25°C, f = 1.0mhz, TQFP only)
Recommended Operating
Temperature and Supply Voltage
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range
(VCC = 5.0V ± 10%)
Recommended DC Operating
Conditions
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. V
TERM must not exceed Vcc + 10% for more than 25% of the cycle time or 10ns
maximum, and is limited to
< 20mA for the period of VTERM > Vcc + 10%.
NOTES:
1. This is the parameter T
A. This is the "instant on" case temperature.
2. Industrial temperature: for specific speeds, packages and powers contact
your sales office.
NOTES:
1. V
IL > -1.5V for pulse width less than 10ns.
2. V
TERM must not exceed Vcc + 10%.
NOTES:
1. This parameter is determined by device characterization, but is not
production tested.
2. 3dV references the interpolated capacitance when the input and output
signals switch from 0V to 3V or from 3V to 0V.
Symbol Rating Commercial
& Industrial
Military Unit
V
TERM
(2)
Terminal Voltage
with Respect
to GND
-0.5 to +7.0 -0.5 to +7.0 V
T
BIAS
Temperature
Under Bias
-55 to +125 -65 to +135
o
C
T
STG
Storage
Temperature
-65 to +150 -65 to +150
o
C
I
OUT
DC Output
Current
50 50 mA
3099 tbl 03
Grade
Ambient Temperature
GND Vcc
Military -55
O
C to +125
O
C0V5.0V
+
10%
Commercial 0
O
C to +70
O
C0V5.0V
+
10%
Industrial -40
O
C to +85
O
C0V5.0V
+
10%
3099 tbl 04
Symbol Parameter Min. Typ. Max. Unit
V
CC
Supply Voltage 4.5 5.0 5.5 V
GND Ground 0 0 0 V
V
IH
Input High Voltage 2.2
____
6.0
(2)
V
V
IL
Input Low Voltage -0.5
(1 )
____
0.8 V
3099 tbl 05
Symbol Parameter Conditions
(2)
Max. Unit
C
IN
Input Capacitance V
IN
= 3dV 9 pF
C
OUT
Output Capacitance V
OUT
= 3dV 10 pF
3099 tbl 06
Symbol Parameter Test Conditions
70824S 70824L
UnitMin. Max. Min. Max.
|I
LI
| Input Leakage Current V
CC
= 5.5V, V
IN
= 0V to V
CC
___
5
___
A
|I
LO
| Output Leakage Current V
OUT
= 0V to V
CC
___
5
___
A
V
OL
Output Low Voltage I
OL
= +4mA
___
0.4
___
0.4 V
V
OH
Output High Voltage I
OH
= -4mA 2.4
___
2.4
___
V
3099 tbl 07
6.42
IDT70824S/L
High-Speed 4K x 16 Sequential Access Random Access Memory Military and Commercial Temperature Ranges
5
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range
(1,2,8)
(VCC = 5.0V ± 10%)
Data Retention Characteristics Over All Temperature Ranges
(L Version Only)
(VLC < 0.2V, VHC > VCC - 0.2V)
NOTES
1. 'X' in part number indicates power rating (S or L).
2. V
CC = 5V, TA = +25°C; guaranteed by device characterization but not production tested.
3. At f = f
MAX, address, control lines (except Output Enable), and SCLK are cycling at the maximum frequency read cycle of 1/tRC.
4. f = 0 means no address or control lines change.
5. SCE may transition, but is Low (SCE=V
IL) when clocked in by SCLK.
6. SCE may be - 0.2V, after it is clocked in, since SCLK=V
IH must be clocked in prior to powerdown.
7. If one port is enabled (either CE or SCE = LOW) then the other port is disabled (SCE or CE = HIGH, respectively). CMOS HIGH
> Vcc - 0.2V and LOW < 0.2V, and
TTL HIGH = V
IH and LOW = VIL.
8. Industrial temperature: for specific speeds, packages and powers contact your sales office.
NOTES :
1. T
A = +25°C, VCC = 2V; guaranteed by device characterization but not production tested.
2. t
RC = Read Cycle Time
3. This parameter is guaranteed by device characterization, but is not production tested.
4. To initiate data retention, SCE = V
IH must be clocked in.
70824X20
Com'l Only
70824X25
Com'l Only
70824X35
Com'l &
Military
70824X45
Com'l &
Military
Symbol Parameter Test Condition Version Typ.
(2)
Max. Typ.
(2)
Max. Typ.
(2)
Max. Typ.
(2)
Max. Unit
I
CC
Dynamic Operating
Current
(Both Ports Active)
CE
L
and CE
R
= V
IL
,
Outputs Disabled
SC E = V
IL
(5)
f = f
MAX
(3)
COM'L S
L
180
180
380
330
170
170
360
310
160
160
340
290
155
155
340
290
mA
MIL &
IND
S
L
____
____
____
____
____
____
____
____
160
160
400
340
155
155
400
340
I
SB1
Standby Current
(Both Ports - TTL
Level Inputs)
SC E and CE = V
IH
(7)
CMD = V
IH
f = f
MAX
(3)
COM'L S
L
25
25
70
50
25
25
70
50
20
20
70
50
16
16
70
50
mA
MIL &
IND
S
L
____
____
____
____
____
____
____
____
20
20
85
65
16
16
85
65
I
SB2
Standby Current
(One Port - TTL
Level Inputs)
CE or SCE = V
IH
Active Port Outputs Disabled,
f=f
MAX
(3)
COM'L S
L
115
115
260
230
105
105
250
220
95
95
240
210
90
90
240
210
mA
MIL &
IND
S
L
____
____
____
____
____
____
____
____
95
95
290
250
90
90
290
250
I
SB3
Full Standby Current
(Both Ports -
CMOS Level Inputs)
Both Ports CE and
SC E >
V
CC
- 0.2V
(6)
V
IN
> V
CC
- 0.2V or
V
IN
< 0.
2V,
f = 0
(4)
COM'L S
L
1.0
0.2
15
5
1.0
0.2
15
5
1.0
0.2
15
5
1.0
0.2
15
5
mA
MIL &
IND
S
L
____
____
____
____
____
____
____
____
1.0
0.2
30
10
1.0
0.2
30
10
I
SB4
Full Standby Current
(One Port -
CMOS Level Inputs)
One Port CE or
SC E >
V
CC
- 0.2V
(6,7)
Outputs Disabled (Active Port)
f = f
MAX
(3)
V
IN
> V
CC
- 0.2V or V
IN
< 0.2V
COM'L S
L
110
110
240
200
100
100
230
190
90
90
220
180
85
85
220
180
mA
MIL &
IND
S
L
____
____
____
____
____
____
____
____
90
90
260
215
85
85
260
215
3099 tbl 08
Symbol Parameter Test Condition Min. Typ.
(1 )
Max. Unit
V
DR
V
CC
for Data Retention V
CC
= 2V 2.0
___ ___
V
I
CCDR
Data Retention Current
CE = V
HC
V
IN
= V
HC
or = V
LC
MIL. & IND.
___
100 4000
µA
COM'L.
___
100 1500
t
CD R
(3 )
Chip Deselect to Data Retention Time
SCE = V
HC
(4 )
when SCLK = u
CMD >
V
HC
___ ___ ___
V
t
R
(
3)
Operation Recovery Time t
RC
(2 )
___ ___
V
3099 tbl 09
6
IDT70824S/L
High-Speed 4K x 16 Sequential Access Random Access Memory Military and Commercial Temperature Ranges
Data Retention Power Down/Up Waveform (Random and Sequential Port)
(1,2)
Figure 3. Lumped Capacitance Load Typical Derating Curve
AC Test Conditions
Figure 1. AC Output Test Load Figure 2. Output Test Load (for tCLZ, tBLZ, tOLZ, tCHZ, tBHZ,
t
OHZ,tWHZ, tCKHZ, and tCKLZ)
(*Including scope and jig.)
NOTES :
1. SCE is synchronized to the sequential clock input.
2. CMD
> VCC - 0.2V.
DATA RETENTION MODE
V
CC
CE
3099 drw 04
4.5V
t
CDR
t
R
V
DR
V
IH
4.5V
V
DR
2V
S
CLK
SCE
V
IH
I
CC
I
SB
t
PD
I
SB
t
PU
3099 drw 06
893
30pF
347
5V
DATA
OUT
893
5pF*
347
5V
DATA
OUT
3099 drw 05
,
1
2
3
4
5
6
7
8
20 40 60 80 100 120 140 160 180
200
CAPACITANCE (pF)
10pF is the I/O
capacitance of
this device, and
30pF is the AC
Test Load
capacitance.
3099 drw 07
tAA/tCD/tEB
(Typical, ns)
-1
-2
-3
,
Input Pulse Levels
Input Rise/Fall Times
Input Timing Reference Levels
Output Reference Levels
Output Load
GND to 3.0V
3ns Max.
1.5V
1.5V
Figures 1,2 and 3
3099 tbl 10

IDT70824S25PF8

Mfr. #:
Manufacturer:
Description:
IC RAM 64K PARALLEL 80TQFP
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union