10
IDT70824S/L
High-Speed 4K x 16 Sequential Access Random Access Memory Military and Commercial Temperature Ranges
End of buffer flag for Buffer #
1
End of buffer flag for Buffer #2
15
0
M
SBHH H HHH HH HH HH H 1 0LSBI/OBITSH
3099 drw 12
Cases 8 and 9: (Reserved)
Illegal operations. All outputs will be HIGH on the I/O bus during a READ.
Case 7: Flag Status Register Read
Conditions
Flow Control Bits
(5)
NOTES:
1. "H" = V
OH for I/O in the output state and "Don't Cares"' for I/O in the input state.
2. Writing a 0 into bit 4 releases the address pointer after it is stopped due to the STOP mode and allows sequential write operations to resume. This occurs asynchronously
of SCLK, and therefore caution should be taken. The pointer will be at address EOB+2 on the next rising edge of SCLK that is enabled by CNTEN. The pointer is
also released by RST, SLD, SSTRT
1 and SSTRT2 operations.
Flow Control Register Description
(1,2)
NOTE:
1. "H" = V
OH for I/O in the output state and "Don't Cares" for I/O in the input state.
Cases 6 and 7: Flag Status Register Bit Description
(1)
NOTES:
1. EOB
1 and EOB2 may be asserted (set) at the same time, if both end addresses have been loaded with the same value.
2. CMD flow control bits are unchanged, the count does not continue advancement.
3. If EOB
1 and EOB2 are equal, then the pointer will jump to the start of Buffer #1.
4. If the counter has stopped at EOBx and was released by bit 4 of the flow control register, CNTEN must be LOW on the next rising edge of SCLK; otherwise the flow
control will remain in the stop mode.
5. Flow Control Bit settings of '10' and '11' are reserved.
6. Start address and End of address for Buffer #2 and the Flow Control for both Buffer #1 and #2, must be programmed as described in the "Buffer Command Mode"
section. RST conditions are not set to valid addresses.
Cases 6: Flag Status Register
Write Conditions
(1)
NOTES:
1. Either bit 0 or bit 1, or both bits, may be changed simultaneously. One may be
cleared while the second is left alone, or both may be cleared.
2. Remains as it was prior to the CMD operation, either HIGH (1) or LOW (0).
Buffer #1 flow control
Buffer #2 flow control
Counter Release
(STOP Mode Only)
15
SB LSB I/O BITS
0
H
HHH HHH432 1 0HHHH
3099 drw 11
Flow Control
Bit 1 & Bit 0
(Bit 3 & Bit 2)
Mode Functional Description
00 BUFFER
CHAINING
EOB
1
(EOB
2
) is asserted (Active LOW output) when the pointer matches the end address of Buffer #1 (Buffer #2).
The pointer value is changed to the start address of Buffer #2 (Buffer #1)
(1,3)
01 STOP
EOB
1
(EOB
2
) is asserted when the pointer matches the end address of Butler #1 (Butler #2).
The address pointer will stop incrementing when it reaches the next address (EOB address + 1), if CNTEN is LOW
on the next clock's rising edge. Otherwise, the address pointer will stop incrementing on EOB. Sequential write
operations are inhibited after the address pointer is stopped. The pointer can be released by bit 4 of the flow
control register.
(1,2,4)
3099 tbl 17
Flag Status Bit 0, (Bit 1) Functional Description
0Clears Buffer Flag EOB
1
, (EOB
2
).
1 No change to the Buffer Flag.
(2 )
3099 tbl 18
Flag Status Bit 0, (Bit 1) Functional Description
0
EOB
1
(EOB
2
) flag has not been set, the
Pointer has not reached the End of the
Buffer.
1
EOB
1
(EOB
2
) flag has been set, the
Pointer has reached the end of the
Buffer.
3099 tbl 19
6.42
IDT70824S/L
High-Speed 4K x 16 Sequential Access Random Access Memory Military and Commercial Temperature Ranges
11
Random Access Port: AC Electrical Characteristics Over
the Operating Temperature and Supply Voltage Range
(2,4,5)
Random Access Port: AC Electrical Characteristics
Over the Operating Temperature and Supply Voltage
(2,4,5)
NOTES:
1. Transition measured at 0mV from steady state. This parameter is guaranteed with the AC Output Test Load (Figure 1) by device characterization, but is not
production tested.
2. 'X' in part number indicates power rating (S or L).
3. OE is continuously HIGH, OE = V
IH. If during the R/W controlled write cycle the OE is LOW, tWP must be greater or equal to tWHZ + tDW to allow the I/O drivers to
turn off and on the data to be placed on the bus for the required t
DW. If OE is HIGH during the R/W controlled write cycle, this requirement does not apply and the minimum
write pulse is the specified t
WP. For the CE controlled write cycle, OE may be LOW with no degradation to tCW timing.
4. CMD access follows standard timing listed for both read and write accesses, (CE = V
IH when CMD = VIL) or (CMD = VIH when CE = VIL).
5. Industrial temperature: for specific speeds, packages and powers contact your sales office.
70824X20
Com'l Only
70824X25
Com'l Only
70824X35
Com'l &
Military
70824X45
Com'l &
Military
UnitSymbol Parameter Min.Max.Min.Max.Min.Max.Min.Max.
READ CYCLE
t
RC
Read Cycle Time 20
____
25
____
35
____
45
____
ns
t
AA
Address Access Time
____
20
____
25
____
35
____
45 ns
t
ACE
Chip Enable Access Time
____
20
____
25
____
35
____
45 ns
t
BE
Byte Enable Access Time
____
20
____
25
____
35
____
45 ns
t
OE
Output Enable Access Time
____
10
____
10
____
15
____
20 ns
t
OH
Output Hold from Address Change 3
____
3
____
3
____
3
____
ns
t
CL Z
Chip Select Low-Z Time
(1 )
3
____
3
____
3
____
3
____
ns
t
BLZ
Byte Select Low-Z Time
(1 )
3
____
3
____
3
____
3
____
ns
t
OLZ
Output Enable Low-Z Time
(1 )
2
____
2
____
2
____
2
____
ns
t
CHZ
Chip Select High-Z Time
(1 )
____
10
.____
12
____
15
____
15 ns
t
BHZ
Byte Select High-Z Time
(1 )
____
10
____
12
____
15
____
15 ns
t
OHZ
Output Select High-Z Time
(1 )
____
9
____
11
____
15
____
15 ns
t
PU
Chip Select Power-Up Time 0
____
0
____
0
____
0
____
ns
t
PD
Chip Select Power-Down Time
____
20
____
25
____
35
____
45 ns
3099 tbl 20
Symbol Parameter
70824X20
Com'l Only
70824X25
Com'l Only
70824X35
Com'l &
Military
70824X45
Com'l &
Military
UnitMin. Max. Min. Max. Min. Max. Min. Max.
WRITE CYCLE
t
WC
Write Cycle Time 20
____
25
____
35
____
45
____
ns
t
CW
Chip Enable to End-of-Write 15
____
20
____
25
____
30
____
ns
t
AW
Address Valid to End-of-Write
(3 )
15
____
20
____
25
____
30
____
ns
t
AS
Address Set-up Time 0
____
0
____
0
____
0
____
ns
t
WP
Write Pulse Width
(3 )
13
____
20
____
25
____
30
____
ns
t
BP
Byte Enable Pulse Width
(3 )
15
____
20
____
25
____
30
____
ns
t
WR
Write Recovery Time 0
____
0
____
0
____
0
____
ns
t
WHZ
Write Enable Output High-Z Time
(1 )
____
10
____
12
____
15
____
15 ns
t
DW
Data Set-up Time 13
____
15
____
20
____
25
____
ns
t
DH
Data Hold Time 0
____
0
____
0
____
0
____
ns
t
OW
Output Active from End-of-Write 3
____
3
____
3
____
3
____
ns
3099 tbl 21
12
IDT70824S/L
High-Speed 4K x 16 Sequential Access Random Access Memory Military and Commercial Temperature Ranges
Waveform of Read Cycles: Random Access Port
(1,2)
Waveform of Read Cycles: Buffer Command Mode
NOTE:
1. CE = V
IH when CMD = VIL.
NOTES:
1. R/W is HIGH for read cycle.
2. Address valid prior to or coincident with CE transition LOW; otherwise t
AA is the limiting parameter.
ADDR
OE
t
RC
t
AA
t
OH
Valid Data Out
t
CHZ
t
OHZ
t
BE
t
BLZ
t
OE
t
OLZ
CE
L
B, UB
t
ACS
t
CLZ
t
BHZ
I/O
OUT
3099 drw 13
(2)
ADDR
OE
t
RC
t
AA
t
OH
Valid Data Out
t
CHZ
t
OHZ
t
BE
t
BLZ
t
OE
t
OLZ
CMD
LB, UB
t
ACS
t
CLZ
t
BHZ
I/O
OUT
3099 drw 14
(1)

IDT70824S25PF8

Mfr. #:
Manufacturer:
Description:
IC RAM 64K PARALLEL 80TQFP
Lifecycle:
New from this manufacturer.
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