Rev. 1.3 11
Si8660/61/62/63
Table 4. Electrical Characteristics
(V
DD1
=2.5V ±5%, V
DD2
= 2.5 V ±5%, T
A
= –40 to 125 ºC)
Parameter Symbol Test Condition Min Typ Max Unit
VDD Undervoltage Threshold VDDUV+ V
DD1
, V
DD2
rising 1.95 2.24 2.375 V
VDD Undervoltage Threshold VDDUV– V
DD1
, V
DD2
falling 1.88 2.16 2.325 V
VDD Negative-Going Lockout
Hysteresis
VDD
HYS
50 70 95 mV
Positive-Going Input Threshold VT+ All inputs rising 1.4 1.67 1.9 V
Negative-Going Input Threshold VT– All inputs falling 1.0 1.23 1.4 V
Input Hysteresis V
HYS
0.38 0.44 0.50 V
High Level Input Voltage V
IH
2.0 — — V
Low Level Input Voltage V
IL
——0.8V
High Level Output Voltage V
OH
loh = –4 mA V
DD1
,V
DD2
–0.4 2.3 — V
Low Level Output Voltage V
OL
lol = 4 mA — 0.2 0.4 V
Input Leakage Current I
L
——±10µA
Output Impedance
1
Z
O
—50—
DC Supply Current (All inputs 0 V or at supply)
Si8660Bx, Ex
V
DD1
V
DD2
V
DD1
V
DD2
V
I
= 0(Bx), 1(Ex)
V
I
= 0(Bx), 1(Ex)
V
I
= 1(Bx), 0(Ex)
V
I
= 1(Bx), 0(Ex)
—
—
—
—
1.2
3.5
8.8
3.7
1.9
5.3
12.3
5.6
mA
Si8661Bx, Ex
V
DD1
V
DD2
V
DD1
V
DD2
V
I
= 0(Bx), 1(Ex)
V
I
= 0(Bx), 1(Ex)
V
I
= 1(Bx), 0(Ex)
V
I
= 1(Bx), 0(Ex)
—
—
—
—
1.7
3.4
7.9
4.8
2.7
5.1
11.1
7.2
mA
Si8662Bx, Ex
V
DD1
V
DD2
V
DD1
V
DD2
V
I
= 0(Bx), 1(Ex)
V
I
= 0(Bx), 1(Ex)
V
I
= 1(Bx), 0(Ex)
V
I
= 1(Bx), 0(Ex)
—
—
—
—
2.2
3.0
7.5
5.6
3.3
4.5
10.5
8.4
mA
Si8663Bx, Ex
V
DD1
V
DD2
V
DD1
V
DD2
V
I
= 0(Bx), 1(Ex)
V
I
= 0(Bx), 1(Ex)
V
I
= 1(Bx), 0(Ex)
V
I
= 1(Bx), 0(Ex)
—
—
—
—
2.6
2.6
6.5
6.5
3.9
3.9
9.1
9.1
mA
Notes:
1. The nominal output impedance of an isolator driver channel is approximately 50 , ±40%, which is a combination of the
value of the on-chip series termination resistor and channel resistance of the output driver FET. When driving loads
where transmission line effects will be a factor, output pins should be appropriately terminated with controlled
impedance PCB traces.
2. t
PSK(P-P)
is the magnitude of the difference in propagation delay times measured between different units operating at the
same supply voltages, load, and ambient temperature.
3. Start-up time is the time period from the application of power to valid data at the output.