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Sequential READ, Start from Current Location
This sequence (Figure 23) starts in the same way as the
single READ from current location (Figure 21). Instead of
generating a no-acknowledge bit after the first byte of data
has been transferred, the master generates an acknowledge
bit and continues to perform byte reads until “L” bytes have
been read.
Figure 23. Sequential READ, Start from Current Location
N+LN+L1N+2N+1Previous Reg Address, N
SAS 1 Read DataASlave Address Read DataRead Data Read DataAAA
Single Write to Random Location
Figure 24 shows the typical WRITE cycle from the host
to the MT9V124. The first 2 bytes indicate a 16-bit address
of the internal registers with most-significant byte first. The
following 2 bytes indicate the 16-bit data.
Figure 24. Single WRITE to Random Location
Previous Reg Address, N Reg Address, M M+1
S0 PSlave Address Reg Address[15:8] Reg Address[7:0]
A
A
A
A A Write Data
Sequential WRITE, Start at Random Location
This sequence (Figure 25) starts in the same way as the
single WRITE to random location (Figure 24). Instead of
generating a no-acknowledge bit after the first byte of data
has been transferred, the master generates an acknowledge
bit and continues to perform byte writes until “L” bytes have
been written. The WRITE is terminated by the master
generating a stop condition.
Figure 25. Sequential WRITE, Start at Random Location
Previous Reg Address, N Reg Address, M M+1
S0Slave Address A Reg Address[15:8] A A AReg Address[7:0]
M+LM+L1M+L2M+1 M+2 M+3
Write Data AA
A
S
A
Write Data
Write Data
AWrite Data Write Data
One-Time Programming Memory (OTPM)
The MT9V124 has one-time programmable memory
(OTPM) for supporting defect correction, module ID, and
other customer-related information. There are 2784 bits of
OTPM available for features such as Lens Shading
Correction, Color Correction Matrix, White Balance
Weight, and user-defined information. The OTPM
programming requires the data to be first placed in OTPM
buffer and the presence of VPP. The proper procedure and
timing must be followed.
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SPECTRAL CHARACTERISTICS
CRA vs. Image Height Plot
Image Height
CRA
(deg)
(%) (mm)
10 20 30 40 50 60 70 80 90 100 110
Figure 26. Chief Ray Angle (CRA) vs. Image Height
0
2
4
6
8
10
12
14
16
18
20
20
24
26
28
30
0
CRA (deg)
Image Height (%)
0 0 0
5 0.035 1.23
10 0.070 2.46
15 0.105 3.70
20 0.140 4.94
25 0.175 6.18
30 0.210 7.43
35 0.245 8.67
40 0.280 9.90
45 0.315 11.13
50 0.350 12.36
55 0.385 13.57
60 0.420 14.77
65 0.455 15.97
70 0.490 17.14
75 0.525 18.31
80 0.560 19.45
85 0.595 20.58
90 0.630 21.69
95 0.665 22.77
100 0.700 23.83
Figure 27. Quantum Efficiency
0
10
20
30
350 400 450 500 550 600 650 700 750
Wavelength (nm)
Quantum Efficiency (%)
50
40
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21
ELECTRICAL SPECIFICATIONS
Table 12. ABSOLUTE MAXIMUM RATINGS
Symbol Parameter
Rating
Unit
Min Max
VDD Core Digital Voltage –0.3 2.4 V
VDD_IO I/O Digital Voltage –0.3 4.0 V
VAA Analog Voltage –0.3 4.0 V
VAA_PIX Pixel Supply Voltage –0.3 4.0 V
VPP OTPM Power Supply 7.5 9.5 V
VIN Input Voltage –0.3 VDD_IO + 0.3 V
T
OP
Operating Temperature (Measure at Junction) –30 70 °C
T
STG
(Note 1) Storage Temperature –40 85 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. This is a stress rating only, and functional operation of the device at these or any other conditions above those indicated in the product
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Recommended Operating Conditions
Table 13. OPERATING CONDITIONS
Symbol Parameter Min Typ Max Units
VDD Core Digital Voltage 1.7 1.8 1.95 V
VDD_IO I/O Digital Voltage
2.5 2.8 3.1 V
1.7 1.8 1.95 V
VAA Analog Voltage 2.5 2.8 3.1 V
VAA_PIX Pixel Supply Voltage 2.5 2.8 3.1 V
VDD_PLL PLL Supply Voltage 2.5 2.8 3.1 V
VPP OTPM Power Supply 8.5 8.5 9 V
T
J
Operating Temperature (at Junction) –30 55 70 °C
Table 14. DC ELECTRICAL CHARACTERISTICS
Symbol
Parameter Condition Min Max Unit
VIH Input HIGH Voltage 0.7 * VDD_IO VDD_IO + 0.5 V
VIL Input LOW Voltage –0.3 0.3 * VDD_IO V
IIN Input Leakage Current VIN = 0V or VIN = VDD_IO 10 μA
VOH Output HIGH Voltage
VDD_IO = 1.8 V, IOH = 2 mA 1.7 V
VDD_IO = 1.8 V, IOH = 4 mA 1.6 V
VDD_IO = 1.8 V, IOH = 8 mA 1.4 V
VDD_IO = 2.8 V, IOH = 2 mA 2.7 V
VDD_IO = 2.8 V, IOH = 4 mA 2.6 V
VDD_IO = 2.8 V, IOH = 8 mA 2.5 V

MT9V124EBKSTCH-GEVB

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Optical Sensor Development Tools VGA 1/4" SOC HB
Lifecycle:
New from this manufacturer.
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