4
LTC1419
1419fb
Note 6: Linearity, offset and full-scale specifications apply for a single-
ended +A
IN
input with – A
IN
grounded.
Note 7: Integral nonlinearity is defined as the deviation of a code from a
straight line passing through the actual endpoints of the transfer curve.
The deviation is measured from the center of the quantization band.
Note 8: Bipolar offset is the offset voltage measured from –0.5LSB
when the output code flickers between 0000 0000 0000 00 and
1111 1111 1111 11.
Note 9: Guaranteed by design, not subject to test.
Note 10: Recommended operating conditions.
Note 11: The falling edge of CONVST starts a conversion. If CONVST
returns high at a critical point during the conversion it can create small
errors. For best performance ensure that CONVST returns high either
within 650ns after the start of the conversion or after BUSY rises.
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
P
DIS
Power Dissipation ● 150 240 mW
Nap Mode SHDN = 0V, CS = 0V 7.5 12 mW
Sleep Mode SHDN = 0V, CS = 5V 1.2 mW
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
f
SAMPLE(MAX)
Maximum Sampling Frequency ● 800 kHz
t
CONV
Conversion Time ● 950 1150 ns
t
ACQ
Acquisition Time ● 90 300 ns
t
ACQ + CONV
Acquisition + Conversion Time ● 1040 1250 ns
t
1
CS to RD Setup Time (Notes 9, 10) ● 0ns
t
2
CS↓ to CONVST↓ Setup Time (Notes 9, 10) ● 40 ns
t
3
CS↓ to SHDN↓ Setup Time (Notes 9, 10) 40 ns
t
4
SHDN↑ to CONVST↓ Wake-Up Time (Note 10) 400 ns
t
5
CONVST Low Time (Notes 10, 11) ● 40 ns
t
6
CONVST to BUSY Delay C
L
= 25pF 20 ns
● 50 ns
t
7
Data Ready Before BUSY↑ 20 50 ns
● 15 ns
t
8
Delay Between Conversions (Note 10) ● 40 ns
t
9
Wait Time RD↓ After BUSY↑ (Note 9) ● –5 ns
t
10
Data Access Time After RD↓ C
L
= 25pF 15 25 ns
● 35 ns
C
L
= 100pF 20 35 ns
● 50 ns
t
11
Bus Relinquish Time 10 20 ns
0°C ≤ T
A
≤ 70°C ● 25 ns
–40°C ≤ T
A
≤ 85°C ● 30 ns
t
12
RD Low Time ● t
10
ns
t
13
CONVST High Time ● 40 ns
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliabilty and lifetime.
Note 2: All voltage values are with respect to ground with DGND and
AGND wired together unless otherwise noted.
Note 3: When these pin voltages are taken below V
SS
or above V
DD
, they
will be clamped by internal diodes. This product can handle input currents
greater than 100mA below V
SS
or above V
DD
without latchup.
Note 4: When these pin voltages are taken below V
SS
, they will be clamped
by internal diodes. This product can handle input currents greater than
100mA below V
SS
without latchup. These pins are not clamped
to V
DD
.
Note 5: V
DD
= 5V, V
SS
= – 5V, f
SAMPLE
= 800kHz, t
r
= t
f
= 5ns unless
otherwise specified.
The ● denotes specifications which apply over the full operating temperature range,
otherwise specifications are at T
A
= 25°C. (Note 5)
POWER REQUIRE E TS
WU
The ● denotes specifications which apply over the full operating temperature
range, otherwise specifications are at T
A
= 25°C. (Note 5)
TI I G CHARACTERISTICS
UW
