TDA8034T_TDA8034AT All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 3.1 — 13 December 2012 19 of 30
NXP Semiconductors
TDA8034T; TDA8034AT
Smart card interface
[1] To meet these specifications, V
CC
should be decoupled to pin GND using two ceramic multilayer capacitors of low ESR with values of
either 100 nF or one 220 nF and one 470 nF.
[2] Using decoupling capacitors of one 220 nF 20 % and one 470 nF 20 %.
[3] Using the integrated 9 k pull-up resistor connected to V
CC
.
[4] Using the integrated 10 k pull-up resistor connected to V
DD(INTF)
.
[5] The transition time and the duty factor definitions are shown in Figure 13 on page 20
; =t1/(t1+t2).
[6] Pins PRESN and CMDVCCN are active LOW; pin RSTIN is active HIGH; see Table 4
for states of pin CLKDIV1.
[7] Pin PRESN has an integrated current source of 1.25 A to V
DD(INTF)
.
[8] Pin OFFN is an NMOS drain, using an internal 20 k pull-up resistor connected to V
DD(INTF)
.
t
w
pulse width 5 V card; Figure 10 30 - - ms
3 V card; Figure 11
,
Figure 12
-- 15ms
Card detection input
[6][7]
V
IL
LOW-level input
voltage
0.3 - 0.3V
DD(INTF)
V
V
IH
HIGH-level input
voltage
0.7V
DD(INTF)
-V
DD(INTF)
+ 0.3 V
V
hys
hysteresis voltage pin PRESN - 0.14V
DD(INTF)
-V
I
IL
LOW-level input current 0 V < V
IL
<V
DD(INTF)
-- 5 A
I
IH
HIGH-level input
current
0V<V
IH
<V
DD(INTF)
-- 5 A
OFFN output
[8]
V
OL
LOW-level output
voltage
I
OL
=2mA 0 - 0.3 V
V
OH
HIGH-level output
voltage
I
OH
= 15 A0.75V
DD(INTF)
-- V
R
pu
pull-up resistance connected to V
DD(INTF)
16 20 24 k
Table 7. Characteristics of IC supply voltage
…continued
V
DDP
= 5 V; V
DD
= 3.3 V; V
DD(INTF)
= 3.3 V; f
xtal
= 10 MHz; GND = 0 V; T
amb
= 25
C; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Table 8. Protection characteristics
Symbol Parameter Conditions Min Typ Max Unit
I
Olim
output current limit pin I/O -15 - +15 mA
pin V
CC
135 175 225 mA
pin CLK 70 - +70 mA
pin RST 20 - +20 mA
I
sd
shutdown current pin V
CC
90 120 150 mA
T
sd
shutdown temperature at die - 150 - C
Table 9. Timing characteristics
Symbol Parameter Conditions Min Typ Max Unit
t
act
activation time see Figure 9 on page 13 2090 - 4160 s
t
deact
deactivation time see Figure 7 on page 11 35 90 250 s
