LTC1871-7
13
18717fd
applicaTions inForMaTion
Application Circuits
A basic LTC1871-7 application circuit is shown in Figure 9.
External component selection is driven by the characteris-
tics of the load and the input supply. The first topology to
be analyzed will be the boost converter, followed by SEPIC
(single-ended primary inductance converter).
Boost Converter: Duty Cycle Considerations
For a boost converter operating in a continuous conduc-
tion mode (CCM), the duty cycle of the main switch is:
D =
V
O
+ V
D
V
IN
V
O
+ V
D
where V
D
is the forward voltage of the boost diode. For
converters where the input voltage is close to the output
voltage, the duty cycle is low and for converters that develop
a high output voltage from a low voltage input supply,
the duty cycle is high. The maximum output voltage for a
boost converter operating in CCM is:
V
O(MAX)
=
V
IN(MIN)
1 D
MAX
( )
V
D
The maximum duty cycle capability of the LTC1871-7 is
typically 92%. This allows the user to obtain high output
voltages from low input supply voltages.
Boost Converter: The Peak and Average Input Currents
The control circuit in the LTC1871-7 is measuring the input
current typically using a sense resistor in the MOSFET
source, so the output current needs to be reflected back
to the input in order to dimension the power MOSFET
properly. Based on the fact that, ideally, the output power
is equal to the input power, the maximum average input
current is:
I
IN(MAX)
=
I
O(MAX)
1 D
MAX
The peak input current is :
I
IN(PEAK)
= 1+
χ
2
I
O(MAX)
1 D
MAX
The maximum duty cycle, D
MAX
, should be calculated at
minimum V
IN
.
Figure 9. A High Efficiency 42V, 1.5A Automotive Boost Converter
RUN
I
TH
FB
FREQ
MODE/SYNC
SENSE
V
IN
INTV
CC
GATE
GND
1
2
3
4
5
10
9
8
7
6
LTC1871-7
f = 250kHz
R
T
100k
1%
R1
12.4k
1%
R2
412k
1%
R3
1M
C
VCC
4.7µF
X5R
R
SENSE
0.005Ω
1W
C
IN2
10µF
50V
X5R
×2
M1
D1
L1
6.8µH
R
C
24k
C
C1
2.2nF
C
C2
100pF
C
OUT1
68µF
100V
×2
V
IN
8V TO 28V
V
OUT
42V
1.5A
GND
18717 F09
+
C
IN1
*
560µF
50V
+
C
OUT2
10µF
50V
X5R
×2
C
IN1
: SANYO 50MV560AXL (*RECOMMENDED FOR LAB EVALUATION
FOR SUPPLY LEAD LENGTHS GREATER THAN A FEW INCHES)
C
IN2
: TDK C5750X5R1H106M
C
OUT1
: SANYO 100CV68FS
C
OUT2
: TDK C5750X5R1H106M
D1: DIODES INC B360B
L1: COOPER DR127-6R8
M1: SILICONIX/VISHAY Si7370DP
LTC1871-7
14
18717fd
applicaTions inForMaTion
Boost Converter: Ripple Current I
L
and the ‘
χ
’ Factor
The constant ‘
χ
’ in the equation above represents the
percentage peak-to-peak ripple current in the inductor,
relative to its maximum value. For example, if 30% ripple
current is chosen, then
χ
= 0.30, and the peak current is
15% greater than the average.
For a current mode boost regulator operating in CCM,
slope compensation must be added for duty cycles above
50% in order to avoid subharmonic oscillation. For the
LTC1871-7, this ramp compensation is internal. Having an
internally fixed ramp compensation waveform, however,
does place some constraints on the value of the inductor
and the operating frequency. If too large an inductor is
used, the resulting current ramp (I
L
) will be small relative
to the internal ramp compensation (at duty cycles above
50%), and the converter operation will approach voltage
mode (ramp compensation reduces the gain of the current
loop). If too small an inductor is used, but the converter
is still operating in CCM (near critical conduction mode),
the internal ramp compensation may be inadequate to
prevent subharmonic oscillation. To ensure good current
mode gain and avoid subharmonic oscillation, it is recom-
mended that the ripple current in the inductor fall in the
range of 20% to 40% of the maximum average current.
For example, if the maximum average input current is
1A, choose a I
L
between 0.2A and 0.4A, and a value ‘
χ
between 0.2 and 0.4.
Boost Converter: Inductor Selection
Given an operating input voltage range, and having chosen
the operating frequency and ripple current in the inductor,
the inductor value can be determined using the following
equation:
L =
IN(MIN)
I
L
f
D
MAX
where :
I
L
= χ
I
O(MAX)
1 D
MAX
Remember that boost converters are not short-circuit
protected. Under a shorted output condition, the inductor
current is limited only by the input supply capability. For
applications requiring a step-up converter that is short-
circuit protected, please refer to the applications section
covering SEPIC converters.
The minimum required saturation current of the inductor
can be expressed as a function of the duty cycle and the
load current, as follows:
I
L(SAT)
1+
χ
2
I
O(MAX)
1 D
MAX
The saturation current rating for the inductor should be
checked at the minimum input voltage (which results in
the highest inductor current) and maximum output current.
Boost Converter: Operating in Discontinuous Mode
Discontinuous mode operation occurs when the load cur-
rent is low enough to allow the inductor current to run out
during the off-time of the switch, as shown in Figure 10.
Once the inductor current is near zero, the switch and
diode capacitances resonate with the inductance to form
damped ringing at 1MHz to 10MHz. If the off-time is long
enough, the drain voltage will settle to the input voltage.
Depending on the input voltage and the residual energy
in the inductor, this ringing can cause the drain of the
power MOSFET to go below ground where it is clamped
by the body diode. This ringing is not harmful to the IC
and it has not been shown to contribute significantly to
EMI. Any attempt to damp it with a snubber will degrade
the efficiency.
Figure 10. Discontinuous Mode Waveforms
for the Converter Shown in Figure 9
OUTPUT
VOLTAGE
200mV/DIV
INDUCTOR
CURRENT
1A/DIV
1µs/DIV
18717 F10
MOSFET
DRAIN
VOLTAGE
20V/DIV
LTC1871-7
15
18717fd
applicaTions inForMaTion
Sense Resistor Selection
During the switch on-time, the control circuit limits the
maximum voltage drop across the sense resistor to about
150mV (at low duty cycle). The peak inductor current
is therefore limited to 150mV/R
SENSE
. The relationship
between the maximum load current, duty cycle and the
sense resistor R
SENSE
is:
R
SENSE
V
SENSE(MAX)
1 D
MAX
1+
χ
2
I
O(MAX)
The V
SENSE(MAX)
term is typically 150mV at low duty cycle,
and is reduced to about 100mV at a duty cycle of 92% due
to slope compensation, as shown in Figure 11.
It is worth noting that the 1 – D
MAX
relationship between
I
O(MAX)
and R
SENSE
can cause boost converters with a wide
input range to experience a dramatic range of maximum
input and output current. This should be taken into con-
sideration in applications where it is important to limit the
maximum current drawn from the input supply.
Figure 11. Maximum SENSE Threshold Voltage vs Duty Cycle
Boost Converter: Power MOSFET Selection
Important parameters for the power MOSFET include the
drain-to-source breakdown voltage (BV
DSS
), the threshold
voltage (V
GS(TH)
), the on-resistance (R
DS(ON)
) versus gate-
to-source voltage, the gate-to-source and gate-to-drain
charges (Q
GS
and Q
GD
, respectively), the maximum drain
current (I
D(MAX)
) and the MOSFETs thermal resistances
(R
TH(JC)
and R
TH(JA)
).
The gate drive voltage is set by the 7V INTV
CC
low drop
regulator. Consequently, 6V rated MOSFETs are required
in most high voltage LTC1871-7 applications.
Pay close attention to the BV
DSS
specifications for the
MOSFETs relative to the maximum actual switch voltage
in the application. The switch node can ring during the
turn-off of the MOSFET due to layout parasitics. Check
the switching waveforms of the MOSFET directly across
the drain and source terminals using the actual PC board
layout (not just on a lab breadboard!) for excessive ringing.
Calculating Power MOSFET Switching and Conduction
Losses and Junction Temperatures
In order to calculate the junction temperature of the power
MOSFET, the power dissipated by the device must be known.
This power dissipation is a function of the duty cycle, the
load current and the junction temperature itself (due to
the positive temperature coefficient of its R
DS(ON)
). As a
result, some iterative calculation is normally required to
determine a reasonably accurate value. Care should be
taken to ensure that the converter is capable of delivering
the required load current over all operating conditions (line
voltage and temperature), and for the worst-case speci-
fications for V
SENSE(MAX)
and the R
DS(ON)
of the MOSFET
listed in the manufacturers data sheet.
The power dissipated by the MOSFET in a boost converter
is:
P
FET
=
I
O(MAX)
1 D
2
R
DS(ON)
D ρ
T
+k V
O
2
I
O(MAX)
1 D
( )
C
RSS
f
The first term in the equation above represents the I
2
R
losses in the device, and the second term, the switching
losses. The constant, k = 1.7, is an empirical factor inversely
related to the gate drive current and has the dimension
of 1/current. The ρ
T
term accounts for the temperature
coefficient of the R
DS(ON)
of the MOSFET, which is typically
0.4%/°C. Figure 12 illustrates the variation of normalized
R
DS(ON)
over temperature for a typical power MOSFET.
DUTY CYCLE
0
MAXIMUM CURRENT SENSE VOLTAGE (mV)
100
150
0.8
18717 F11
50
0
0.2
0.4
0.5
1.0
200

LTC1871EMS-7#TRPBF

Mfr. #:
Manufacturer:
Analog Devices / Linear Technology
Description:
Switching Controllers No Rsense DC/DC Controller Boost, Flyback & SEPIC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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