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MT9HVF6472PKY-40EB1

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17
Products and specifications discussed herein are subject to change by Micron without notice.
512MB, 1GB: (x72, ECC, SR) 244-Pin DDR2 VLP Mini-RDIMM
Features
PDF: 09005aef81c9620b/Source: 09005aef81c961ec Micron Technology, Inc., reserves the right to change products or specifications without notice.
HVF9C64_128x72K.fm - Rev. C 3/07 EN
1 ©2005 Micron Technology, Inc. All rights reserved.
DDR2 SDRAM VLP Mini-RDIMM
MT9HVF6472(P)K – 512MB
MT9HVF12872(P)K – 1GB
For component data sheets, refer to Micron’s Web site: www.micron.com
Features
• 244-pin, very low profile mini registered dual in-line
memory module (VLP Mini-RDIMM)
• Fast data transfer rates: PC2-3200, PC2-4200,
PC2-5300, or PC2-6400
• 512MB (64 Meg x 72) or 1GB (128 Meg x 72)
• Supports ECC error detection and correction
•V
DD = VDDQ = +1.8V
•V
DDSPD = +1.7V to +3.6V
• JEDEC-standard 1.8V I/O (SSTL_18-compatible)
• Differential data strobe (DQS, DQS#) option
•4n-bit prefetch architecture
• Multiple internal device banks for concurrent
operation
• Supports duplicate output strobe (RDQS/RDQS#)
• Programmable CAS# latency (CL)
• Posted CAS# additive latency (AL)
• WRITE latency = READ latency - 1
t
CK
• Programmable burst lengths: 4 or 8
• Adjustable data-output drive strength
• 64ms, 8,192-cycle refresh
• On-die termination (ODT)
• Serial presence-detect (SPD) with EEPROM
• Gold edge contacts
• Single rank
Figure 1: 244-Pin VLP Mini-RDIMM
Notes: 1. Contact Micron for industrial temperature
module offerings.
2. CL = CAS (READ) latency; registered mode
will add one clock cycle to CL.
Options Marking
•Parity P
• Operating temperature
1
– Commercial (0°C ≤ T
A
≤ +70°C) None
– Industrial (–40°C ≤ T
A
≤ +85°C) I
•Package
– 244-pin DIMM (Pb-free) Y
• Frequency/CAS latency
2
– 2.5ns @ CL = 5 (DDR2-800) -80E
– 2.5ns @ CL = 6 (DDR2-800) -800
– 3ns @ CL = 5 (DDR2-667) -667
– 3.75ns @ CL = 4 (DDR2-533) -53E
– 5.0ns @ CL = 3 (DDR2-400) -40E
•PCB height
– 18.2mm (0.72in)
PCB height: 18.2mm (0.72in)
Table 1: Key Timing Parameters
Speed
Grade
Industry
Nomenclature
Data Rate (MT/s)
t
RCD
(ns)
t
RP
(ns)
t
RC
(ns)CL = 6 CL = 5 CL = 4 CL = 3
-80E PC2-6400 – 800 533 – 12.5 12.5 55
-800 PC2-6400 800 667 53E – 15 15 55
-667 PC2-5300 – 667 533 400 15 15 55
-53E PC2-4200 – – 533 400 15 15 55
-40E PC2-3200 – – 400 400 15 15 55
PDF: 09005aef81c9620b/Source: 09005aef81c961ec Micron Technology, Inc., reserves the right to change products or specifications without notice.
HVF9C64_128x72K.fm - Rev. C 3/07 EN
2 ©2005 Micron Technology, Inc. All rights reserved.
512MB, 1GB: (x72, ECC, SR) 244-Pin DDR2 VLP Mini-RDIMM
Features
Notes: 1. Data sheets for the base devices can be found on Micron’s Web site.
2. All part numbers end with a two-place code (not shown), designating component and PCB
revisions. Consult factory for current revision codes. Example: MT9HVF12872KY-40EE1
.
Table 2: Addressing
512MB 1GB
Refresh count
8K 8K
Row address
16K (A0–A13) 16K (A0–A13)
Device bank address
4 (BA0, BA1) 8 (BA0–BA2)
Device page size per bank
1KB 1KB
Device configuration
512Mb (64 Meg x 8) 1Gb (128 Meg x 8)
Column address
1K (A0–A9) 1K (A0–A9)
Module rank address
1 (S0#) 1 (S0#)
Table 3: Part Numbers and Timing Parameters – 512MB Modules
Base device: MT47H64M8,
1
512Mb DDR2 SDRAM
Part Number
2
Module
Density Configuration
Module
Bandwidth
Memory Clock/
Data Rate
Latency
(CL-
t
RCD-
t
RP)
MT9HVF6472(P)KY-80E__
512MB 64 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 5-5-5
MT9HVF6472(P)KY-800__
512MB 64 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 6-6-6
MT9HVF6472(P)KY-667__
512MB 64 Meg x 72 5.3 GB/s 3.0ns/667 MT/s 5-5-5
MT9HVF6472(P)KY-53E__
512MB 64 Meg x 72 4.3 GB/s 3.75ns/533 MT/s 4-4-4
MT9HVF6472(P)KY-40E__
512MB 64 Meg x 72 3.2 GB/s 5.0ns/400 MT/s 3-3-3
Table 4: Part Numbers and Timing Parameters – 1GB Modules
Base device: MT47H128M8,
1
1Gb DDR2 SDRAM
Part Number
2
Module
Density Configuration
Module
Bandwidth
Memory Clock/
Data Rate
Latency
(CL-
t
RCD-
t
RP)
MT9HVF12872(P)KY-80E__
1GB 128 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 5-5-5
MT9HVF12872(P)KY-800__
1GB 128 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 6-6-6
MT9HVF12872(P)KY-667__
1GB 128 Meg x 72 5.3 GB/s 3.0ns/667 MT/s 5-5-5
MT9HVF12872(P)KY-53E__
1GB 128 Meg x 72 4.3 GB/s 3.75ns/533 MT/s 4-4-4
MT9HVF12872(P)KY-40E__
1GB 128 Meg x 72 3.2 GB/s 5.0ns/400 MT/s 3-3-3
PDF: 09005aef81c9620b/Source: 09005aef81c961ec Micron Technology, Inc., reserves the right to change products or specifications without notice.
HVF9C64_128x72K.fm - Rev. C 3/07 EN
3 ©2005 Micron Technology, Inc. All rights reserved.
512MB, 1GB: (x72, ECC, SR) 244-Pin DDR2 VLP Mini-RDIMM
Pin Assignments and Descriptions
Pin Assignments and Descriptions
Notes: 1. Pin 55 is NC for 512MB, BA2 for 1GB.
2. Pin 56 is NC for non-parity and E
RR_OUT for parity.
3. Pin 68 is NC for non-parity and P
AR_IN for parity.
Table 5: Pin Assignments
244-Pin VLP Mini-RDIMM Front 244-Pin VLP Mini-RDIMM Back
Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol
1V
REF 32 VSS 63 VDDQ94DQS5# 123 VSS 154 DQ28 185 A3 216 NC/
RDQS5#
2V
SS 33 DQ24 64 A2 95 DQS5 124 DQ4 155 DQ29 186 A1 217 VSS
3 DQ0 34 DQ25 65 VDD 96 VSS 125 DQ5 156 VSS 187 VDD 218 DQ46
4DQ135V
SS 66 VSS 97 DQ42 126 VSS 157 DM3/
RDQS3
188 CK0 219 DQ47
5VSS 36 DQS3# 67 VSS 98 DQ43 127 DM0/
RDQS0
158 NC/
RDQS3#
189CK0#220 VSS
6 DQS0# 37 DQS3 68
3
NC/
PAR_IN
99 VSS 128 NC/
RDQS0#
159 VSS 190 VDD 221 DQ52
7DQS038 VSS 69 VDD 100 DQ48 129 VSS 160 DQ30 191 A0 222 DQ53
8V
SS 39 DQ26 70 A10 101 DQ49 130 DQ6 161 DQ31 192 BA1 223 VSS
9 DQ2 40 DQ27 71 BA0 102 VSS 131 DQ7 162 VSS 193 VDD 224 RFU
10 DQ3 41 V
SS 72 VDD 103 SA2 132 VSS 163 CB4 194RAS#225 RFU
11 VSS 42 CB0 73 WE# 104 NC 133 DQ12 164 CB5 195 VDDQ226 VSS
12 DQ8 43 CB1 74 VDDQ 105 Vss 134 DQ13 165 VSS 196 S0# 227 DM6/
RDQS6
13 DQ9 44 VSS 75 CAS# 106 DQS6# 135 VSS 166 DM8/
RDQS8
197 VDDQ228 NC/
RDQS#6
14 VSS 45 DQS8# 76 VDDQ 107 DQS6 136 DM1/
RDQS1
167 NC/
RDQS8#
198 ODT0 229 VSS
15 DQS1# 46 DQS8 77 NC 108 VSS 137 NC/
RDQS1#
168 VSS 199 A13 230 DQ54
16 DQS1 47 VSS 78 NC 109 DQ50 138 VSS 169 CB6 200 VDD 231 DQ55
17 V
SS 48 CB2 79 VDDQ 110 DQ51 139 RFU 170 CB7 201 NC 232 VSS
18 RESET# 49 CB3 80 NC 111 VSS 140 RFU 171 VSS 202 VSS 233 DQ60
19 NC 50 V
SS 81 VSS 112 DQ56 141 VSS 172 NC 203 DQ36 234 DQ61
20 VSS 51 NC 82 DQ32 113 DQ57 142 DQ14 173 VDDQ 204 DQ37 235 VSS
21 DQ10 52 VDDQ83DQ33114 VSS 143 DQ15 174 NC 205 VSS 236 DM7/
RDQS7
22 DQ11 53 CKE0 84 V
SS 115 DQS7# 144 VSS 175 VDD 206 DM4/
RDQS4
237 NC/
RDQS7#
23 V
SS 54 VDD 85 DQS4# 116 DQS7 145 DQ20 176 NC 207 NC/
RDQS4#
238 VSS
24 DQ16 55
1
NC/BA2 86 DQS4 117 VSS 146 DQ21 177 NC 208 VSS 239 DQ62
25 DQ17 56
2
NC/
E
RR_OUT
87 VSS 118 DQ58 147 VSS 178 VDDQ 209 DQ38 240 DQ63
26 V
SS 57 VDDQ 88 DQ34 119 DQ59 148 DM2/
RDQS2
179 A12 210 DQ39 241 VSS
27 DQS2# 58 A11 89 DQ35 120 VSS 149 NC/
RDQS2#
180A9211VSS 242 SDA
28 DQS2 59 A7 90 V
SS 121 SA0 150 VSS 181 VDD 212 DQ44 243 SCL
29 V
SS 60 VDD 91 DQ40 122 SA1 151 DQ22 182 A8 213 DQ45 244 VDDSPD
30 DQ18 61 A5 92 DQ41 152 DQ23 183 A6 214 VSS
31 DQ19 62 A4 93 VSS 153 VSS 184 VDDQ 215 DM5/
RDQS5
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17

MT9HVF6472PKY-40EB1

Mfr. #:
Buy MT9HVF6472PKY-40EB1
Manufacturer:
Micron
Description:
MOD DDR2 SDRAM 512MB 244MRDIMM
Lifecycle:
New from this manufacturer.
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