PDF: 09005aef81c9620b/Source: 09005aef81c961ec Micron Technology, Inc., reserves the right to change products or specifications without notice.
HVF9C64_128x72K.fm - Rev. C 3/07 EN
13 ©2005 Micron Technology, Inc. All rights reserved.
512MB, 1GB: (x72, ECC, SR) 244-Pin DDR2 VLP Mini-RDIMM
Register and PLL Specifications
Notes: 1. To avoid spurious start and stop conditions, a minimum delay is placed between SCL = 1 and
the falling or rising edge of SDA.
2. This parameter is sampled.
3. For a restart condition, or following a WRITE cycle.
4. The SPD EEPROM WRITE cycle time (
t
WRC) is the time from a valid stop condition of a write
sequence to the end of the EEPROM internal ERASE/PROGRAM cycle. During the WRITE
cycle, the EEPROM bus interface circuit is disabled, SDA remains HIGH due to pull-up resis-
tance, and the EEPROM does not respond to its slave address.
Table 14: Serial Presence-Detect EEPROM DC Operating Conditions
All voltages referenced to VSS; VDDSPD = +1.7V to +3.6V
Parameter/Condition Symbol Min Max Units
Supply voltage
V
DDSPD 1.7 3.6 V
Input high voltage: Logic 1; All inputs
V
IH VDDSPD × 0.7 VDDSPD + 0.5 V
Input low voltage: Logic 0; All inputs
V
IL –0.6 VDDSPD × 0.3 V
Output low voltage: I
OUT = 3mA
V
OL –0.4V
Input leakage current: V
IN = GND to VDDSPD
ILI 0.10 3 µA
Output leakage current: V
OUT = GND to VDDSPD
ILO 0.05 3 µA
Standby current
I
SB 1.6 4 µA
Power supply current, READ: SCL clock frequency = 100 kHz
I
CC
R
0.4 1 mA
Power supply current, WRITE: SCL clock frequency = 100 kHz
I
CC
W
23mA
Table 15: Serial Presence-Detect EEPROM AC Operating Conditions
All voltages referenced to VSS; VDDSPD = +1.7V to +3.6V
Parameter/Condition Symbol Min Max Units Notes
SCL LOW to SDA data-out valid
t
AA 0.2 0.9 µs 1
Time the bus must be free before a new transition can start
t
BUF 1.3 µs
Data-out hold time
t
DH 200 ns
SDA and SCL fall time
t
F–300ns2
Data-in hold time
t
HD:DAT 0 µs
Start condition hold time
t
HD:STA 0.6 µs
Clock HIGH period
t
HIGH 0.6 µs
Noise suppression time constant at SCL, SDA inputs
t
I–50ns
Clock LOW period
t
LOW 1.3 µs
SDA and SCL rise time
t
R–0.3µs2
SCL clock frequency
f
SCL 400 kHz
Data-in setup time
t
SU:DAT 100 ns
Start condition setup time
t
SU:STA 0.6 µs 3
Stop condition setup time
t
SU:STO 0.6 µs
WRITE cycle time
t
WRC 10 ms 4
PDF: 09005aef81c9620b/Source: 09005aef81c961ec Micron Technology, Inc., reserves the right to change products or specifications without notice.
HVF9C64_128x72K.fm - Rev. C 3/07 EN
14 ©2005 Micron Technology, Inc. All rights reserved.
512MB, 1GB: (x72, ECC, SR) 244-Pin DDR2 VLP Mini-RDIMM
Register and PLL Specifications
Table 16: Serial Presence-Detect Matrix
Byte Description Entry (Version) 512MB 1GB
0
Number of SPD bytes used by Micron
128 80 80
1
Total number of bytes in SPD device
256 08 08
2
Fundamental memory type
DDR2 SDRAM 08 08
3
Number of row addresses on assembly
14 0E 0E
4
Number of column addresses on assembly
10 0A 0A
5
DIMM height and module ranks
18.2mm,
single rank
00 00
6
Module data width
72 48 48
7
Reserved
000 00
8
Module voltage interface levels
SSTL 1.8V 05 05
9
SDRAM cycle time,
t
CK
(CL = MAX value, see byte 18)
-80E/-800
-667
-53E
-40E
25
30
3D
50
25
30
3D
50
10
SDRAM access from clock,
t
AC
(CL = MAX value, see byte 18)
-80E/-800
-667
-53E
-40E
40
45
50
60
40
45
50
60
11
Module configuration type
ECC
ECC and parity
02
06
02
06
12
Refresh rate/type
7.81µs/SELF 82 82
13
SDRAM device width (primary SDRAM)
808 08
14
Error-checking SDRAM data width
808 08
15
Reserved
000 00
16
Burst lengths supported
4, 8 0C 0C
17
Number of banks on SDRAM device
4 or 8 04 08
18
CAS latencies supported
-80E (5, 4)
-800 (6, 5, 4)
-667 (5, 4, 3)
-53E/-40E (4, 3)
30
70
38
18
30
70
38
18
19
Module thickness
01 01
20
DDR2 DIMM type
Registered
Mini-RDIMM
10 10
21
SDRAM module attributes
1 PLL, 2 Reg 04 04
22
SDRAM device attributes: weak driver
(01) and 50Ω ODT (03)
-80E/-800/-667
-53E/-40E
03
01
03
01
23
SDRAM cycle time,
t
CK,
MAX CL - 1
-80E/-667
-800
-53E/-40E
3D
30
50
3D
30
50
24
SDRAM access from CK,
t
AC,
MAX CL - 1
-80E/-800
-667
-53E
-40E
40
45
50
60
40
45
50
60
25
SDRAM cycle time,
t
CK,
MAX CL - 2
-80E/-800
-667
-53E/-40E
00/3D
50
00
00/3D
50
00
26
SDRAM access from CK,
t
AC,
MAX CL - 2
-80E/-800
-667
-53E/-40E
00/40
45
00
00/40
45
00
PDF: 09005aef81c9620b/Source: 09005aef81c961ec Micron Technology, Inc., reserves the right to change products or specifications without notice.
HVF9C64_128x72K.fm - Rev. C 3/07 EN
15 ©2005 Micron Technology, Inc. All rights reserved.
512MB, 1GB: (x72, ECC, SR) 244-Pin DDR2 VLP Mini-RDIMM
Register and PLL Specifications
27
MIN row precharge time,
t
RP
-80E
-800/-667/-53E/-40E
32
3C
32
3C
28
MIN row active-to-row active,
t
RRD
1E 1E
29
MIN RAS#-to-CAS# delay,
t
RCD
-80E
-800/-667/-53E/-40E
32
3C
32
3C
30
MIN active-to-precharge time,
t
RAS
-80E/-800/-667/-53E
-40E
2D
28
2D
28
31
Module rank density
512MB, 1GB 80 01
32
Address and command setup time,
t
IS
b
-80E/-800
-667
-53E
-40E
17
20
25
35
17
20
25
35
33
Address and command hold time,
t
IH
b
-80E/-800
-667
-53E
-40E
25
27
37
47
25
27
37
47
34
Data/data mask input setup time,
t
DS
b
-80E/-800
-667/-53E
-40E
05
10
15
05
10
15
35
Data/data mask input hold time,
t
DH
b
-80E/-800
-667
-53E
-40E
12
17
22
27
12
17
22
27
36
Write recovery time,
t
WR
3C 3C
37
WRITE-to-READ command delay,
t
WTR
-80E
-800/-40E
-667/-53E
1E
28
1E
1E
28
1E
38
READ-to-PRECHARGE command delay,
t
RTP
1E 1E
39
Memory analysis probe
00 00
40
Extension for bytes 41 and 42
-80E
-800/-667/-53E/-40E
30
00
36
06
41
MIN active-to-active/refresh time,
t
RC
1
-80E
-800/-667/-53E
-40E
39
3C
37
39
3C
37
42
MIN AUTO REFRESH-to-ACTIVE/AUTO
REFRESH command period,
t
RFC
69 7F
43
SDRAM device MAX cycle time,
t
CK (MAX)
80 80
44
SDRAM device MAX DQS–DQ skew time,
t
DQSQ
-80E/-800
-667
-53E
-40E
14
18
1E
23
14
18
1E
23
45
SDRAM device MAX read data hold skew
factor,
t
QHS
-80E/-800
-667
-53E
-40E
1E
22
28
2D
1E
22
28
2D
46
PLL relock time
0F 0F
47–61
Optional features, not supported
00 00
62
SPD revision
Release 1.2 12 12
Table 16: Serial Presence-Detect Matrix (continued)
Byte Description Entry (Version) 512MB 1GB

MT9HVF6472PKY-40EB1

Mfr. #:
Manufacturer:
Micron
Description:
MOD DDR2 SDRAM 512MB 244MRDIMM
Lifecycle:
New from this manufacturer.
Delivery:
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