CY7C1049D
Document Number: 38-05474 Rev. *H Page 13 of 15
Acronyms Document Conventions
Units of Measure
Acronym Description
CE
Chip Enable
CMOS Complementary Metal Oxide Semiconductor
I/O Input/Output
OE
Output Enable
SRAM Static Random Access Memory
SOJ Small Outline J-Lead
VFBGA Very Fine-Pitch Ball Grid Array
Symbol Unit of Measure
°C degree Celsius
MHz megahertz
μA microampere
mA milliampere
mV millivolt
mW milliwatt
ns nanosecond
pF picofarad
Vvolt
Wwatt
CY7C1049D
Document Number: 38-05474 Rev. *H Page 14 of 15
Document History Page
Document Title: CY7C1049D, 4-Mbit (512 K × 8) Static RAM
Document Number: 38-05474
Revision ECN
Orig. of
Change
Submission
Date
Description of Change
** 201560 SWI See ECN Advance Datasheet for C9 IPP
*A 233729 RKF See ECN 1.AC, DC parameters are modified as per EROS(Spec # 01-2165)
2.Pb-free offering in the ‘ordering information’
*B 351096 PCI See ECN Changed from Advance to Preliminary
Removed 17, 20 ns Speed bin
Added footnote # 4
Redefined I
CC
values for Com’l and Ind’l temperature ranges
I
CC
(Com’l):
Changed from 67 and 54 mA to 75 and 70 mA for 12 and 15 ns
speed bins respectively
I
CC
(Ind’l): Changed from 80, 67 and 54 mA to 90, 85 and 80 mA for 10, 12 and
15 ns speed bins respectively
Added V
IH(max
) spec in Note# 2
Modified Note# 10 on t
R
Changed t
SCE
from 8 to 7 ns for 10 ns speed bin
Changed reference voltage level for measurement of Hi-Z parameters from
r500 mV to r200 mV
Added Truth Table on page# 6
Removed L-Version
Added 10 ns parts in the Ordering Information Table
Added Lead-Free Product Information
Shaded Ordering Information Table
*C 446328 NXR See ECN Converted from Preliminary to Final
Removed -12 and -15 speed bins
Removed Commercial Operating Range product information
Changed Maximum Rating for supply voltage from 7 V to 6 V
Updated Thermal Resistance table
Changed t
HZWE
from 6 ns to 5 ns
Updated footnote #7 on High-Z parameter measurement
Replaced Package Name column with Package Diagram in the Ordering Infor-
mation table
*D 3109184 AJU 12/13/2010 Added Ordering Code Definitions.
Updated Package Diagram.
*E 3235742 PRAS 04/20/2011 Added Acronyms and Units of measure.
Updated template.
*F 4040855 MEMJ 06/26/2013 Updated Functional Description.
Updated Electrical Characteristics:
Added one more Test Condition “V
CC
= Max, I
OH
= –0.1mA” for V
OH
parameter
and added maximum value corresponding to that Test Condition.
Added Note 3 and referred the same note in maximum value for V
OH
parameter
corresponding to Test Condition “V
CC
= Max, I
OH
= –0.1mA”.
Updated Package Diagram:
spec 51-85090 – Changed revision from *E to *F.
Updated in new template.
*G 4391976 MEMJ 05/28/2014 Updated Switching Waveforms:
Added Note 22 and referred the same note in Figure 8.
Completing Sunset Review.
*H 4578500 MEMJ 11/24/2014 Added related documentation hyperlink in page 1.
Document Number: 38-05474 Rev. *H Revised November 24, 2014 Page 15 of 15
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CY7C1049D
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CY7C1049D-10VXI

Mfr. #:
Manufacturer:
Cypress Semiconductor
Description:
SRAM 4Mb 10ns 512K x 8 Fast Async SRAM
Lifecycle:
New from this manufacturer.
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