Document Number: 38-05474 Rev. *H Page 7 of 15
Switching Characteristics
Over the Operating Range
Parameter
[9]
Description
-10
Unit
Min Max
Read Cycle
t
power
V
CC
(typical) to the First Access
[10]
100 – Ps
t
RC
Read Cycle Time 10 – ns
t
AA
Address to Data Valid – 10 ns
t
OHA
Data Hold from Address Change 3 – ns
t
ACE
CE LOW to Data Valid – 10 ns
t
DOE
OE LOW to Data Valid – 5 ns
t
LZOE
OE LOW to Low Z
[11]
0–ns
t
HZOE
OE HIGH to High Z
[11, 12]
–5ns
t
LZCE
CE LOW to Low Z
[11]
3–ns
t
HZCE
CE HIGH to High Z
[11, 12]
–5ns
t
PU
CE LOW to Power-Up 0 – ns
t
PD
CE HIGH to Power-Down – 10 ns
Write Cycle
[13, 14]
t
WC
Write Cycle Time 10 – ns
t
SCE
CE LOW to Write End 7 – ns
t
AW
Address Set-Up to Write End 7 – ns
t
HA
Address Hold from Write End 0 – ns
t
SA
Address Set-Up to Write Start 0 – ns
t
PWE
WE Pulse Width 7 – ns
t
SD
Data Set-Up to Write End 6 – ns
t
HD
Data Hold from Write End 0 – ns
t
LZWE
WE HIGH to Low Z
[11]
3–ns
t
HZWE
WE LOW to High Z
[11, 12]
–5ns
Notes
9. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5 V, input pulse levels of 0 to 3.0 V, and output loading of the specified I
OL
/I
OH
and 30-pF load capacitance.
10. t
POWER
gives the minimum amount of time that the power supply should be at typical V
CC
values until the first memory access can be performed.
11. At any given temperature and voltage condition, t
HZCE
is less than t
LZCE
, t
HZOE
is less than t
LZOE
, and t
HZWE
is less than t
LZWE
for any given device.
12. t
HZOE
, t
HZCE
, and t
HZWE
are specified with a load capacitance of 5 pF as in part (c) of Figure 2. Transition is measured when the outputs enter a high impedance state.
13. The internal write time of the memory is defined by the overlap of CE
LOW, and WE LOW. CE and WE must be LOW to initiate a write, and the transition of either of these
signals can terminate the write. The input data set-up and hold timing should be referenced to the leading edge of the signal that terminates the write.
14. The minimum write cycle time for Write Cycle No. 3 (WE
Controlled, OE LOW) is the sum of t
HZWE
and t
SD
.
