CY7C1049D
Document Number: 38-05474 Rev. *H Page 4 of 15
Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. User guidelines are not tested.
Storage Temperature ............................... –65 qC to +150 qC
Ambient Temperature with
Power Applied ......................................... –55 qC to +125 qC
Supply Voltage on
V
CC
to Relative GND
[2]
...............................–0.5 V to +6.0 V
DC Voltage Applied to Outputs
in High Z State
[2]
................................–0.5 V to V
CC
+ 0.5 V
DC Input Voltage
[2]
............................ –0.5 V to V
CC
+ 0.5 V
Current into Outputs (LOW) ........................................ 20 mA
Static Discharge Voltage
(per MIL-STD-883, Method 3015) ........................... >2001 V
Latch-Up Current ....................................................>200 mA
Operating Range
Range Ambient Temperature V
CC
Industrial –40 qC to +85 qC4.5 V5.5 V
Electrical Characteristics
Over the Operating Range
Parameter Description Test Conditions
-10
Unit
Min Max
V
OH
Output HIGH Voltage V
CC
= Min I
OH
= –4.0 mA 2.4 V
V
CC
= Max I
OH
= –0.1mA 3.4
[3]
V
OL
Output LOW Voltage V
CC
= Min., I
OL
= 8.0 mA 0.4 V
V
IH
[2]
Input HIGH Voltage 2.0 V
CC
+ 0.5 V
V
IL
[2]
Input LOW Voltage
[2]
–0.5 0.8 V
I
IX
Input Leakage Current GND < V
I
< V
CC
–1 +1 PA
I
OZ
Output Leakage Current GND < V
OUT
< V
CC
, Output Disabled –1 +1 PA
I
CC
VCC Operating Supply Current V
CC
= Max.,
f = f
MAX
= 1/t
RC
100 MHz 90 mA
83 MHz 80 mA
66 MHz 70 mA
40 MHz 60 mA
I
SB1
Automatic CE Power-Down
Current – TTL Inputs
Max. V
CC
, CE > V
IH
,
V
IN
> V
IH
or V
IN
< V
IL
, f = f
MAX
–20mA
I
SB2
Automatic CE Power-Down
Current – CMOS Inputs
Max. V
CC
, CE > V
CC
– 0.3 V,
V
IN
> V
CC
– 0.3 V or V
IN
< 0.3 V, f = 0
–10mA
Notes
2. Minimum voltage is –2.0 V and V
IH
(max) = V
CC
+ 2 V for pulse durations of less than 20 ns.
3. Please note that the maximum V
OH
limit does not exceed minimum CMOS V
IH
of 3.5 V. If you are interfacing this SRAM with 5 V legacy processors that require a
minimum V
IH
of 3.5 V, please refer to Application Note AN6081 for technical details and options you may consider.
CY7C1049D
Document Number: 38-05474 Rev. *H Page 5 of 15
Capacitance
Parameter
[4]
Description Test Conditions Max Unit
C
IN
Input capacitance T
A
= 25 qC, f = 1 MHz, V
CC
= 5.0 V 8 pF
C
OUT
I/O capacitance 8pF
Thermal Resistance
Parameter
[4]
Description Test Conditions SOJ Package Unit
4
JA
Thermal resistance
(junction to ambient)
Still Air, soldered on a 3 × 4.5 inch, four-layer printed circuit
board
57.91 qC/W
4
JC
Thermal resistance
(junction to case)
36.73 qC/W
AC Test Loads and Waveforms
Figure 2. AC Test Loads and Waveforms
[5]
90%
10%
3.0 V
GND
90%
10%
ALL INPUT PULSES
5 V
OUTPUT
5 pF
INCLUDING
JIG AND
SCOPE
(c)
d3 ns d 3 ns
OUTPUT
R1 481:
R2
255:
167:
Equivalent to: VENIN EQUIVALENT
1.73 V
THÉ
* CAPACITIVE LOAD CONSISTS
OF ALL COMPONENTS OF THE
TEST ENVIRONMENT
30 pF*
OUTPUT
Z = 50:
50:
1.5 V
(a)
10-ns device
HIGH-Z CHARACTERISTICS
(b)
Note
4. Tested initially and after any design or process changes that may affect these parameters.
5. AC characteristics (except High-Z) for 10-ns parts are tested using the load conditions shown in Figure 2 (a). High-Z characteristics are tested for all speeds using
the test load shown in Figure 2 (c).
CY7C1049D
Document Number: 38-05474 Rev. *H Page 6 of 15
Data Retention Characteristics
Over the Operating Range
Parameter Description Conditions
[6]
Min Max Unit
V
DR
V
CC
for Data Retention 2.0 V
I
CCDR
Data Retention Current V
CC
= V
DR
= 2.0 V,
CE
> V
CC
– 0.3 V,
V
IN
> V
CC
– 0.3 V or V
IN
< 0.3 V
–10mA
t
CDR
[7]
Chip Deselect to Data Retention
Time
0–ns
t
R
[8]
Operation Recovery Time t
RC
–ns
Data Retention Waveform
Figure 3. Data Retention Waveform
4.5 V4.5 V
t
CDR
V
DR
> 2 V
DATA RETENTION MODE
t
R
CE
V
CC
Notes
6. No input may exceed V
CC
+ 0.5 V.
7. Tested initially and after any design or process changes that may affect these parameters.
8. Full device operation requires linear V
CC
ramp from V
DR
to V
CC(min.)
> 50 Ps or stable at V
CC(min.)
> 50 Ps.

CY7C1049D-10VXI

Mfr. #:
Manufacturer:
Cypress Semiconductor
Description:
SRAM 4Mb 10ns 512K x 8 Fast Async SRAM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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