©2014 Integrated Device Technology, Inc.
OCTOBER 2014
DSC 4831/13
1
Functional Block Diagram
Features:
◆
True Dual-Port memory cells which allow simultaneous
access of the same memory location
◆
High-speed clock to data access
– Commercial: 4.2/5/6ns (max.)
– Industrial: 5ns (max)
◆
Pipelined output mode
◆
Counter enable and reset features
◆
Dual chip enables allow for depth expansion without
additional logic
◆
Full synchronous operation on both ports
– 7.5ns cycle time, 133MHz operation (9.6 Gbps bandwidth)
– Fast 4.2ns clock to data out
– 1.8ns setup to clock and 0.7ns hold on all control, data, and
address inputs @ 133MHz
– Data input, address, byte enable and control registers
– Self-timed write allows fast cycle time
◆
Separate byte controls for multiplexed bus and bus
matching compatibility
◆
LVTTL- compatible, single 3.3V (±150mV) power supply for
core
◆
LVTTL- compatible, selectable 3.3V (±150mV)/2.5V (±125mV)
power supply for I/Os and control signals on each port
◆
Industrial temperature range (-40°C to +85°C) is
available for selected speeds
◆
Available in a 208-pin Plastic Quad Flatpack (PQFP),
208-ball fine-pitch Ball Grid Array, and 256-pin Ball
Grid Array
◆
Green parts availble, see ordering instructions
HIGH-SPEED 3.3V 16K x 36
SYNCHRONOUS PIPELINED
DUAL-PORT STATIC RAM
WITH 3.3V OR 2.5V INTERFACE
IDT70V3569S
CNTRST
R
Counter/
Address
Reg.
A
13R
A
0R
Counter/
Address
Reg.
CNTEN
R
ADS
R
CNTEN
L
ADS
L
CNTRST
L
Dout0-8_L
Dout9-17_L
Dout18-26_L
Dout27-35_L
Dout0-8_R
Dout9-17_R
Dout18-26_R
Dout27-35_R
B
W
0
L
B
W
1
L
B
W
2
L
B
W
3
L
B
W
3
R
B
W
2
R
B
W
1
R
B
W
0
R
I/O
0L
- I/O
35L
A
13L
A
0L
I/O
0R
-I/O
35R
Din_L
ADDR_L
Din_R
ADDR_R
OE
R
OE
L
4831 tbl 01
3L
BE
2L
BE
1L
BE
0L
R/W
L
CE
0L
3R
BE
2R
BE
1R
BE
0R
R/W
R
CE
0R
CE
1R
CE
1L
16K x 36
MEMORY
ARRAY
CLK
R
CLK
L